نتائج البحث - "Saraya, Takuya"

1

Academic Journal

High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling

المؤلفون: Huang, Xingyu, Hikake, Kaito, Kim, Sung-Hun, Sakai, Kota, Li, Zhuo, Mizutani, Tomoko, Saraya, Takuya, Hiramoto, Toshiro, Takahashi, Takanori, Uenuma, Mutsunori, Uraoka, Yukiharu, Kobayashi, Masaharu

المساهمون: Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology, JST Adopting Sustainable Partnerships for Innovative Research Ecosystem, Japan Society for the Promotion of Science (JSPS) KAKENHI, Taiwan Semiconductor Manufacturing Company (TSMC) Advanced Semiconductor Research Project

المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 12, page 7509-7515 ; ISSN 0018-9383 1557-9646

الاتاحة: https://doi.org/10.1109/ted.2024.3473888
http://xplorestaging.ieee.org/ielx8/16/10778112/10722039.pdf?arnumber=10722039

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2

Academic Journal

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices

المؤلفون: Hikake, Kaito, Li, Zhuo, Hao, Junxiang, Pandy, Chitra, Saraya, Takuya, Hiramoto, Toshiro, Takahashi, Takanori, Uenuma, Mutsunori, Uraoka, Yukiharu, Kobayashi, Masaharu

المساهمون: JST CREST, JST ASPIRE, JSPS KAKENHI, TSMC Advanced Semiconductor Research Project

المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 4, page 2373-2379 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2024.3370534
http://xplorestaging.ieee.org/ielx7/16/10482422/10466665.pdf?arnumber=10466665

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3

Academic Journal

Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors

المؤلفون: Zhou, Xiang, Fukui, Munetoshi, Takeuchi, Kiyoshi, Saraya, Takuya, Saito, Wataru, Hiramoto, Toshiro

المصدر: Japanese Journal of Applied Physics ; volume 63, issue 2, page 02SP57 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/ad189f
https://iopscience.iop.org/article/10.35848/1347-4065/ad189f
https://iopscience.iop.org/article/10.35848/1347-4065/ad189f/pdf

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4

Academic Journal

Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

المؤلفون: Hao, Junxiang, Mei, Xiaoran, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu

المساهمون: Japan Science and Technology Agency, Taiwan Semiconductor Manufacturing Company, Japan Society for the Promotion of Science

المصدر: Japanese Journal of Applied Physics ; volume 63, issue 1, page 014003 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/ad11b8
https://iopscience.iop.org/article/10.35848/1347-4065/ad11b8
https://iopscience.iop.org/article/10.35848/1347-4065/ad11b8/pdf

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5

Academic Journal

Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs

المؤلفون: Zhou, Xiang, Fukui, Munetoshi, Takeuchi, Kiyoshi, Saraya, Takuya, Hiramoto, Toshiro

المساهمون: JST SPRING

المصدر: IEEE Journal of the Electron Devices Society ; volume 12, page 433-439 ; ISSN 2168-6734

الاتاحة: http://dx.doi.org/10.1109/jeds.2023.3342869
http://xplorestaging.ieee.org/ielx7/6245494/10416702/10360206.pdf?arnumber=10360206

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6

Academic Journal

Nanosheet oxide semiconductor FETs with ALD InZnO x compared to InGaO x

المؤلفون: Kim, Sung-Hun, Hikake, Kaito, Li, Zhuo, Itoya, Yuki, Sakai, Kota, Saraya, Takuya, HIRAMOTO, Toshiro, Kobayashi, Masaharu

المساهمون: Taiwan Semiconductor Manufacturing Company, Core Research for Evolutional Science and Technology, Japan Society for the Promotion of Science, Japan Science and Technology Agency

المصدر: Japanese Journal of Applied Physics ; ISSN 0021-4922 1347-4065

الاتاحة: https://doi.org/10.35848/1347-4065/adac1f
https://iopscience.iop.org/article/10.35848/1347-4065/adac1f
https://iopscience.iop.org/article/10.35848/1347-4065/adac1f/pdf

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7

Academic Journal

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

المؤلفون: Masaharu Kobayashi, Jixuan Wu, Yoshiki Sawabe, Saraya Takuya, Toshiro Hiramoto

المصدر: Nano Convergence, Vol 9, Iss 1, Pp 1-11 (2022)

مصطلحات موضوعية: Ferroelectric HfO2, Thermodynamics, Kinetics, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-5404

URL الوصول: https://doaj.org/article/fe8a4cfd63044d1f9247da0e38d704f9

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8

Academic Journal

Device modeling of oxide–semiconductor channel antiferroelectric FETs using half-loop hysteresis for memory operation

المؤلفون: Huang, Xingyu, Itoya, Yuki, Li, Zhuo, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu

المصدر: Japanese Journal of Applied Physics ; volume 62, issue SC, page SC1024 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/acac3b
https://iopscience.iop.org/article/10.35848/1347-4065/acac3b
https://iopscience.iop.org/article/10.35848/1347-4065/acac3b/pdf

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9

Conference

Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration–ALD Material Engineering, High-Field Transport, Statistical Variability

المؤلفون: Hikake, Kaito, Huang, Xingyu, Kim, Sung-Hun, Sakai, Kota, Li, Zhuo, Mizutani, Tomoko, Saraya, Takuya, Hiramoto, Toshiro, Takahashi, Takanori, Uenuma, Mutsunori, Uraoka, Yukiharu, Kobayashi, Masaharu

المصدر: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631493
http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631493.pdf?arnumber=10631493

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10

Conference

A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel

المؤلفون: Kim, Sung-Hun, Hikake, Kaito, Li, Zhuo, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu

المصدر: 2024 IEEE Silicon Nanoelectronics Workshop (SNW) ; page 61-62

الاتاحة: http://dx.doi.org/10.1109/snw63608.2024.10639206
http://xplorestaging.ieee.org/ielx8/10638791/10638792/10639206.pdf?arnumber=10639206

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11

Conference

Reducing turn-Off loss by suppressing Back-Side parasitic npn Transistor in Single-Back and Double-Front Gate-Controlled IGBT

المؤلفون: Kobayashi, Yusuke, Fukui, Munetoshi, Matsudai, Tomoko, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Sakano, Tatsunori, Yamamoto, Takato, Inokuchi, Tomoaki, Gejo, Ryohei, Kobayashi, Kenya, Takao, Kazuto, Hiramoto, Toshiro

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

الاتاحة: http://dx.doi.org/10.1109/ispsd59661.2024.10579631
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579631.pdf?arnumber=10579631

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12

Conference

Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited)

المؤلفون: Kobayashi, Masaharu, Hikake, Kaito, Li, Zhuo, Hao, Junxiang, Pandy, Chitra, Saraya, Takuya, Hiramoto, Toshiro, Takahashi, Takanori, Uenuma, Mutsunori, Uraoka, Yukiharu

المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48228.2024.10529363
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529363.pdf?arnumber=10529363

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13

Conference

Transistor Matrix Array for Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures

المؤلفون: Mizutani, Tomoko, Takeuchi, Kiyoshi, Saraya, Takuya, Oka, Hiroshi, Mori, Takahiro, Kobayashi, Masaharu, Hiramoro, Toshiro

المساهمون: Technology Development

المصدر: 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)

الاتاحة: http://dx.doi.org/10.1109/icmts59902.2024.10520700
http://xplorestaging.ieee.org/ielx7/10520250/10520251/10520700.pdf?arnumber=10520700

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14

Academic Journal

A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures

المؤلفون: Mo, Fei, Mei, Xiaoran, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu

المصدر: Japanese Journal of Applied Physics ; volume 61, issue SC, page SC1013 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/ac3d0e
https://iopscience.iop.org/article/10.35848/1347-4065/ac3d0e
https://iopscience.iop.org/article/10.35848/1347-4065/ac3d0e/pdf

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15

Academic Journal

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

المؤلفون: Liu, Zihao, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

المصدر: Japanese Journal of Applied Physics ; volume 61, issue SC, page SC1002 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/ac3a8c
https://iopscience.iop.org/article/10.35848/1347-4065/ac3a8c
https://iopscience.iop.org/article/10.35848/1347-4065/ac3a8c/pdf

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16

Academic Journal

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

المؤلفون: Li, Zhuo, Wu, Jixuan, Mei, Xiaoran, Huang, Xingyu, Saraya, Takuya, Hiramoto, Toshiro, Takahashi, Takanori, Uenuma, Mutsunori, Uraoka, Yukiharu, Kobayashi, Masaharu

المساهمون: Japan Science and Technology Agency (JST) Super Highway, Strategic International Collaborative Research Program, Japan Society for the Promotion of Science (JSPS) KAKENHI, Taiwan Semiconductor Manufacturing Company (TSMC) Advanced Semiconductor Research Project

المصدر: IEEE Electron Device Letters ; volume 43, issue 8, page 1227-1230 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2022.3184316
http://xplorestaging.ieee.org/ielx7/55/9841091/09800906.pdf?arnumber=9800906

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