المؤلفون: Francisco Baltazar, Yong Xie, Sandeep R. Bahl

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Computer science, Reliability (computer networking), 020208 electrical & electronic engineering, Gallium nitride, 02 engineering and technology, 01 natural sciences, Stress (mechanics), chemistry.chemical_compound, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Waveform, Realization (systems), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9cfdf8055d0c8b976969c4242f9a7d34
https://doi.org/10.1109/irps45951.2020.9129631

المؤلفون: Sandeep R. Bahl, Paul L. Brohlin

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Computer science, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Gallium nitride, 02 engineering and technology, 01 natural sciences, Field reliability, chemistry.chemical_compound, chemistry, Overvoltage, Robustness (computer science), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Surge, business, Parametric statistics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bdd80508ba1ba3917280392915d68b1d
https://doi.org/10.1109/irps.2019.8720479

المؤلفون: Lixing Fu, Jungwoo Joh, Tathagata Chatterjee, A. Sasikumar, Sameer Pendharkar, Sandeep R. Bahl

المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, Engineering, business.industry, Robustness (computer science), 020208 electrical & electronic engineering, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Power semiconductor device, 02 engineering and technology, business, 01 natural sciences, Reliability engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::58beca3dff0529cd7eb5cd276a06967b
https://doi.org/10.1109/iedm.2016.7838461

المؤلفون: Dong Seup Lee, Sandeep R. Bahl, Daniel Ruiz

المصدر: 2016 IEEE International Reliability Physics Symposium (IRPS).

مصطلحات موضوعية: 010302 applied physics, Power management, Computer science, 020208 electrical & electronic engineering, Transistor, Gallium nitride, Context (language use), 02 engineering and technology, 01 natural sciences, law.invention, Reliability engineering, Product (business), Acceleration, chemistry.chemical_compound, Reliability (semiconductor), chemistry, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a7b2c11328d64cdcca38f296d6089a0b
https://doi.org/10.1109/irps.2016.7574528

المؤلفون: Courtney Parker, Sandeep R. Bahl, Pascale Francis, Jon Tao, William French, Jeng-Jiun Yang, Constantin Bulucea, Vijay Krishnamurthy, Tikno Harjono

المصدر: IEEE Transactions on Electron Devices. 57:2363-2380

مصطلحات موضوعية: Physics, Engineering, business.industry, Transconductance, Circuit design, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Electronic, Optical and Magnetic Materials, Threshold voltage, law.invention, CMOS, law, Logic gate, Power electronics, MOSFET, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fe90d3a43b3dd89584384fdff6bd19ab
https://doi.org/10.1109/ted.2010.2057197

المؤلفون: Sandeep R. Bahl, Michael D. Seeman

المصدر: 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

مصطلحات موضوعية: Energy loss, Materials science, business.industry, Transistor, Electrical engineering, JFET, Gallium nitride, Engineering physics, law.invention, chemistry.chemical_compound, chemistry, Soft switching, law, Power electronics, Cascode, Failure modes of electronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5ac22baa72ec0d83ac6c2d5e3c1f7d29
https://doi.org/10.1109/apec.2015.7104509

المؤلفون: Xuanwu Kang, S. Boulay, Karen Geens, Dirk Wellekens, Stefaan Decoutere, Steve Stoffels, Annelies Delabie, Sandeep R. Bahl, M. Van Hove

المصدر: IEEE Electron Device Letters. 33:667-669

مصطلحات موضوعية: Materials science, business.industry, Gate dielectric, Gallium nitride, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, CMOS, chemistry, Gate oxide, Logic gate, Breakdown voltage, Optoelectronics, Power semiconductor device, Electrical and Electronic Engineering, business, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d4e7877c453d5b9921bb79e59cfeb6dd
https://doi.org/10.1109/led.2012.2188016

المؤلفون: David I. Anderson, Gaurang A. Shah, Michael D. Seeman, Sandeep R. Bahl

المصدر: 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Gallium nitride, Converters, LC circuit, Capacitance, law.invention, chemistry.chemical_compound, chemistry, law, Power semiconductor device, Field-effect transistor, business, Power density

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::faa80f53e93de420156138f0a8ce9baa
https://doi.org/10.1109/apec.2014.6803351

المؤلفون: Bin Lu, Dilip Risbud, Tomas Palacios, David I. Anderson, Sandeep R. Bahl

المصدر: 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

مصطلحات موضوعية: Materials science, business.industry, Transistor, Wide-bandgap semiconductor, Gallium nitride, law.invention, Stress (mechanics), chemistry.chemical_compound, chemistry, law, Optoelectronics, Power semiconductor device, Transient (oscillation), business, Degradation (telecommunications), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4338e7d2f97b96f9f625d0cf577a3bf6
https://doi.org/10.1109/csics.2011.6062461

المؤلفون: Sandeep R. Bahl, V.M. Robbins, N. Moll, G. E. Stillman, Hao-Chung Kuo, B.G. Moser

المصدر: IEEE Electron Device Letters. 21:332-334

مصطلحات موضوعية: Gummel plot, Materials science, Input offset voltage, business.industry, Heterojunction bipolar transistor, Doping, Bipolar junction transistor, Heterojunction, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, Diffusion (business), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1715299e6a42359a5f76f38107c51a48
https://doi.org/10.1109/55.847371