المؤلفون: Krishnaswamy Ramkumar, Long Hinh, Ravindra Kapre, Samanta Santanu Kumar, Swatilekha Saha, Vineet Agrawal, Venkatraman Prabhakar

المصدر: 2020 IEEE International Memory Workshop (IMW).

مصطلحات موضوعية: 010302 applied physics, Artificial neural network, Computer science, Process (computing), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Non-volatile memory, Noise, Neuromorphic engineering, In-Memory Processing, 0103 physical sciences, Electronic engineering, Enhanced Data Rates for GSM Evolution, 0210 nano-technology, Efficient energy use

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::47f04574aad9904999b26fa5b7dc1d1e
https://doi.org/10.1109/imw48823.2020.9108127

المؤلفون: Zhang, Gang, Samanta, Santanu Kumar, Singh, Pawan Kishore, Ma, Fa-Jun, Yoo, Min-Tae, Roh, Yonghan, Yoo, Won Jong

المصدر: IEEE Transactions on Electron Devices ; volume 54, issue 12, page 3177-3185 ; ISSN 0018-9383

الاتاحة: http://dx.doi.org/10.1109/ted.2007.908863
http://xplorestaging.ieee.org/ielx5/16/4383014/04383054.pdf?arnumber=4383054

المؤلفون: K.N. ManjulaRani, N. Lakshminarayanan, Nayan Patel, Samanta Santanu Kumar, Geetha Narasimhan, Helmut Puchner, Ravindra Kapre, Ram Mohan Mooraka

المصدر: 2009 IEEE International Integrated Reliability Workshop Final Report.

مصطلحات موضوعية: Engineering, business.industry, Transistor, Analytical equations, law.invention, Substrate (building), law, MOSFET, Electronic engineering, Degradation (geology), business, Reliability model, NMOS logic, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::96a56b2c808222068fea0af7be8f8e7c
https://doi.org/10.1109/irws.2009.5383015

المؤلفون: Samanta Santanu Kumar, K. N. ManjulaRani, Kevin Jang, Nayan Patel

المصدر: 2009 IEEE International Integrated Reliability Workshop Final Report.

مصطلحات موضوعية: Stress (mechanics), Impact ionization, chemistry.chemical_compound, Distribution (mathematics), Chemistry, Logic gate, Electric field, Analytical chemistry, Oxide, Degradation (geology), Molecular physics, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9c820c3acdde693ed1d7294d187c2239
https://doi.org/10.1109/irws.2009.5383018

المؤلفون: Samanta Santanu Kumar, N. Mathur, K.N. ManjulaRani, Helmut Puchner

المصدر: 2007 International Workshop on Physics of Semiconductor Devices.

مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Time-dependent gate oxide breakdown, Chip, Stress (mechanics), chemistry.chemical_compound, Reliability (semiconductor), chemistry, Gate oxide, Burn-in, Optoelectronics, Degradation (geology), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bcc034e4bbf45aa72b23ee9a35da1c06
https://doi.org/10.1109/iwpsd.2007.4472493

المؤلفون: Samanta, Santanu Kumar

المصدر: IndraStra Global.

مصطلحات موضوعية: Oxynitride Films, Transistor’s, Alloy Layers, Heterostructure, Strained-Si, p-channel, Heart, Ultrathin Oxide, Optical Properties, Alignment

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=issn23813652::7e7b6aa9cefeb306986979acf6ff91f6
https://igi.indrastra.com/items/show/65956

المؤلفون: Gang Zhang¹, Samanta, Santanu Kumar², Singh, Pawan Kishore³, Pa-Jun Ma⁴, Min-Tae Yoo⁵, Yonghan Roh⁵, Won Jong Yoo¹ yoowj@skku.edu

المصدر: IEEE Transactions on Electron Devices. Dec2007, Vol. 54 Issue 12, p3177-3185. 9p. 7 Black and White Photographs, 9 Graphs.

مصطلحات موضوعية: *SYSTEMS design, *RANDOM access memory, *COMPUTER storage devices, CRYSTALLIZATION, FLASH memory, SEMICONDUCTOR storage devices, ELECTRONS, AMORPHOUS semiconductors, ELECTRONICS, SEMICONDUCTORS

المؤلفون: Yeo, Yee Ngee¹, Wang, Ying Qian¹, Samanta, Santanu Kumar¹, Yoo, Won Jong¹ eleyoowj@nus.edu.sg, Samudra, Ganesh¹, Gao, Dongyue¹, Chong, Chee Ching²

المصدر: Thin Solid Films. May2006, Vol. 504 Issue 1/2, p209-212. 4p.

مصطلحات موضوعية: *RADIATION trapping, *SEMICONDUCTOR storage devices, *FLASH memory, *VOLTAGE dividers