المؤلفون: Abed Alrazzaq Alheyasat, Abdel Rahman Naser

المساهمون: University/Department: Universitat de les Illes Balears. Doctorat en Ciència i Tecnologia Química

Thesis Advisors: Alorda Ladaria, Bartomeu, Torrens Caldentey, Gabriel

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: SRAM cells characterization, Reliability margins, Mismatch metrics, SRAM PUFs, Enginyeria electrònica

Time: 621.3

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/674156

المؤلفون: Song, Xiaoxiao, Gu, Huimin, Ling, Xiaodie, Ye, Weijiao, Li, Xiaofei, Zhu, Zhisheng

المصدر: Journal of Hospitality and Tourism Technology, 2024, Vol. 15, Issue 5, pp. 842-861.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/JHTT-12-2023-0428

المؤلفون: Vipin Kumar Sharma, Abhishek Kumar

المصدر: Journal of Engineering and Applied Science, Vol 72, Iss 1, Pp 1-21 (2025)

مصطلحات موضوعية: SRAM, 8T cell, PPC, PFC, CNTFET, Low power, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1110-1903; https://doaj.org/toc/2536-9512

URL الوصول: https://doaj.org/article/c325e8084f3347f0931c15e95bf7d36d

المؤلفون: Shivendra Singh Parihar, Girish Pahwa, Baker Mohammad, Yogesh Singh Chauhan, Hussam Amrouch

المصدر: IEEE Transactions on Quantum Engineering, Vol 6, Pp 1-15 (2025)

مصطلحات موضوعية: 5 nm fin field-effect transistor (FinFET), cryogenic complementary metal–oxide–semiconductor (CMOS), low-power design, memory optimization, static random access memory (SRAM), Atomic physics. Constitution and properties of matter, QC170-197, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10778409/; https://doaj.org/toc/2689-1808

URL الوصول: https://doaj.org/article/1bc90249ebf9453b998eeb974d52f761

المؤلفون: Damyanti Singh, Kirti Gupta, Neeta Pandey

المصدر: Proceedings on Engineering Sciences, Vol 6, Pp 1897-1904 (2024)

مصطلحات موضوعية: hrs, lrs, non-volatile memory (nvm), nvsram, schmitt trigger, sram, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://pesjournal.net/journal/v6-n4/53.pdf; https://doaj.org/toc/2620-2832; https://doaj.org/toc/2683-4111

URL الوصول: https://doaj.org/article/837b2d6f42ba4a8b9f0e6f45ec00cbbf

المؤلفون: Torrens Caldentey, Gabriel

المساهمون: University/Department: Universitat de les Illes Balears. Departament de Física

Thesis Advisors: Bota Ferragut, Sebastián Antonio

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: memorias, SRAM, 6T, 8T, CMOS, robustez, radiación, tolerancia, mitigación, soft error, single event upset, SEU, single event effect, SEE, SER, carga crítica, Qcrit, diseño, layout, partículas alfa, estabilidad, SNM, MBU, MCU, memories, SRAM, 6T, 8T, CMOS, robustness, radiation, tolerance, mitigation, soft error, single event upset, SEU, single event effect, SEE, SER, critical charge, Qcrit, design, layout, alpha particles, stability, SNM, MBU, MCU, memòries, SRAM, 6T, 8T, CMOS, robustesa, radiació, tolerància, mitigació, soft error, single event upset, SEU, single event effect, SEE, SER, càrrega crítica, Qcrit, disseny, layout, partícules alfa, estabilitat, SNM, MBU, MCU, Tecnología Electrónica

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/97291

المؤلفون: Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon

المصدر: Nuclear Engineering and Technology, Vol 56, Iss 8, Pp 2916-2922 (2024)

مصطلحات موضوعية: C-SRAM, Radiation-hardened SRAM cell, Radiation tolerance, Single event upset, Soft error, Static noise margin, Nuclear engineering. Atomic power, TK9001-9401

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S1738573324001128; https://doaj.org/toc/1738-5733

URL الوصول: https://doaj.org/article/df52b849542f47ba986ec1191bca6be6

المؤلفون: Yubiao Luo, Fei Qiao, Zhong Sun

المصدر: Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)

مصطلحات موضوعية: capacitance compensation, computing‐in‐memory, conductance compensation, resistive memory, SRAM, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/8ce08632eb044fd89555ce186a7ec9c6

المؤلفون: Danijel Pavković, Sandra Stanković, Karlo Kvaternik, Nikolina Sitar, Mihael Cipek

المصدر: Energija, Ekonomija, Ekologija, Vol 26, Iss 2, Pp 1-9 (2024)

مصطلحات موضوعية: battery charging, state-of-charge, nonlinear estimators, extended kalman filter (ekf), system reference adaptive model (sram), Energy industries. Energy policy. Fuel trade, HD9502-9502.5, Economics as a science, HB71-74

وصف الملف: electronic resource

Relation: https://doaj.org/toc/0354-8651; https://doaj.org/toc/2812-7528

URL الوصول: https://doaj.org/article/393377ee1dc1409da108b31d293e0969

المؤلفون: Kavitha Manickam, P.K. Janani, S. Karthick, S. Arulsivam, C. Vikram, G. Hariharan, R. Kavinkumar, P. Ganesh

المصدر: Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 112-124 (2024)

مصطلحات موضوعية: carbon nanotube (cnt), cnfet, sram, low power, vlsi, 5g networks., Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://ijeee.iust.ac.ir/article-1-3243-en.pdf; https://doaj.org/toc/1735-2827; https://doaj.org/toc/2383-3890

URL الوصول: https://doaj.org/article/d1af370ca789497aacf2125a0c76f245

المؤلفون: Thanh-Dat Nguyen, Sungju Ryu, Ik-Joon Chang

المصدر: IEEE Access, Vol 12, Pp 194932-194945 (2024)

مصطلحات موضوعية: Ternary content addressable memory, triple-state-in-cell, TRIO-TCAM, TRIO-SRAM, 6T SRAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10795131/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/f738a1c5337e467ca1a2e1ab793e0996

المؤلفون: Nermine M. Edward, Sahar M. Hamed, Wagdy R. Anis, Nahla Elaraby

المصدر: Energies, Vol 17, Iss 24, p 6349 (2024)

مصطلحات موضوعية: memristor, SRAM, low power memory, CMOS, MOS integrated circuit, Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1996-1073/17/24/6349; https://doaj.org/toc/1996-1073

URL الوصول: https://doaj.org/article/4d1cea9b2a6648bb9aff9bf6cbca7fdd

المؤلفون: Zala Dobovšek

المصدر: Amfiteater, Vol 10, Iss 1 (2024)

مصطلحات موضوعية: revščina, delavski razred, dokumentarna drama, razredizem, razredni sram, Ivan Cankar, Dramatic representation. The theater, PN2000-3307

وصف الملف: electronic resource

Relation: https://journals.uni-lj.si/amfiteater/article/view/18952; https://doaj.org/toc/1855-4539; https://doaj.org/toc/1855-850X

URL الوصول: https://doaj.org/article/40512c2b6d054b7f9cfaa1d5810c4cdc

المؤلفون: M. Srinu, E. Sreenivasa Rao, P. Chandra Sekhar

المصدر: e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 8, Iss , Pp 100539- (2024)

مصطلحات موضوعية: FinFET, CMOS, SRAM, Power consumption, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2772671124001219; https://doaj.org/toc/2772-6711

URL الوصول: https://doaj.org/article/91ad184a4ca543188a3f3246b6c25941

المؤلفون: Prathamesh Prashant Rege, Ming Yin, Sanjay Parihar, Joseph Versaggi, Shashank Nemawarkar

المصدر: IEEE Access, Vol 12, Pp 190889-190896 (2024)

مصطلحات موضوعية: Batch normalization, binary neural network, edge device, in-memory computing, process variation, SRAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10639963/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/771dfe3f27e6483293c536acc86afa1d

المؤلفون: Saeed Seyedfaraji, Salar Shakibhamedan, Amire Seyedfaraji, Baset Mesgari, Nima Taherinejad, Axel Jantsch, Semeen Rehman

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 178-186 (2024)

مصطلحات موضوعية: 6T-static random access memory (SRAM), convolutional neural network (CNN), image classification, processing in memory (PIM), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10804123/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/628a643239e948d5987f214ebc6a979f

المؤلفون: Dain Chon, Woong Choi

المصدر: IEEE Access, Vol 12, Pp 981-992 (2024)

مصطلحات موضوعية: Transposable, SRAM, barrel shifter, dynamic gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10375381/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/f95b7c4c60b74121a2a6862f35fbbc39

المؤلفون: Woong Choi

المصدر: IEEE Access, Vol 12, Pp 32971-32982 (2024)

مصطلحات موضوعية: SRAM, low-power, clamper, leakage, assist, burst operation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10444529/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/d2802204694b4d8cb188582c2dd2db50

المؤلفون: Zupei Gu, Shukao Dou, Heng You, Yi Zhan, Shushan Qiao, Yumei Zhou

المصدر: IEEE Access, Vol 12, Pp 35195-35203 (2024)

مصطلحات موضوعية: Computing-in-memory, SRAM, dual-wordline, neural network, charge-domain, multiply-and-accumulate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10444100/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/1c79512992b243f7adcd477e931aec60

المؤلفون: Emilio Isaac Baungarten-Leon, Susana Ortega-Cisneros, German Pinedo-Diaz, Miguel Angel Rivera Acosta, Francisco Javier Rodriguez Navarrete, Uriel Jaramillo-Toral, Cristian Torres Gonzlez, Juan Carlos Garcia Lopez

المصدر: IEEE Access, Vol 12, Pp 59688-59701 (2024)

مصطلحات موضوعية: Framework, interleaving memory, memory design, OpenLane, SKY130 PDK, SRAM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10508358/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/f197be45bdce4ef98895e206f481e65c