المؤلفون: Cai, Yanbo¹ (AUTHOR), Liu, Chengyan² (AUTHOR) cyliu@henu.edu.cn, Jiang, Hongxu¹ (AUTHOR), Yi, Kai¹ (AUTHOR), Liu, Fei¹ (AUTHOR), Wang, Deliang¹ (AUTHOR) eedewang@ustc.edu.cn

المصدر: Journal of Applied Physics. 1/28/2025, Vol. 137 Issue 4, p1-8. 8p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *SOLAR cells, *ELECTRON transport, *THIN films, *TIN oxides, *CAPACITANCE measurement

المؤلفون: Hong, Ji Hoon^1,2 (AUTHOR), Kang, Min Sung^1,2 (AUTHOR), Ha, Inho³ (AUTHOR), Park, Hong-Lae⁴ (AUTHOR), Park, Kyungwook³ (AUTHOR), Jeon, Joohyun⁴ (AUTHOR), Yoo, Wonseok³ (AUTHOR), Kim, Jueun³ (AUTHOR), Chung, Chunhyung³ (AUTHOR), Park, Sung Min³ (AUTHOR) smismfs.park@samsung.com, Cho, Sung Beom^1,2 (AUTHOR) csb@ajou.ac.kr

المصدر: Journal of Applied Physics. 1/7/2025, Vol. 137 Issue 1, p1-11. 11p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *FINITE element method, *DENSITY functional theory, *HEAT transfer, *METAL oxide semiconductor field-effect transistors

المؤلفون: Abram, Ester, Orlov, Nikolai, Garnett, Erik C., Planken, Paul

المصدر: Journal of Applied Physics; 12/28/2024, Vol. 136 Issue 24, p1-14, 14p

مصطلحات موضوعية: ATOMIC force microscopy, ALUMINUM forming, FEMTOSECOND pulses, LIGHT sources, SEMICONDUCTOR devices

المؤلفون: Lee, Sung-Gwang¹ (AUTHOR), Bae, Juhan¹ (AUTHOR), Choi, Hoomi² (AUTHOR), Jeong, Jaein² (AUTHOR), Kim, Youngjeong² (AUTHOR), Hwang, Wontae¹ (AUTHOR) wthwang@snu.ac.kr

المصدر: IEEE Transactions on Semiconductor Manufacturing. Nov2024, Vol. 37 Issue 4, p620-628. 9p.

مصطلحات موضوعية: COMPUTATIONAL fluid dynamics, SEMICONDUCTOR devices, MAGNETIC resonance imaging, MAGNETIC resonance, SURFACE reactions

المؤلفون: Wei, Jingxian¹ (AUTHOR) weijingxian@mail.ustc.edu.cn, Xu, Chenyu² (AUTHOR) chenyux@iastate.edu, Zhang, Sihai³ (AUTHOR) shzhang@ustc.edu.cn

المصدر: IEEE Transactions on Semiconductor Manufacturing. Nov2024, Vol. 37 Issue 4, p535-541. 7p.

مصطلحات موضوعية: SCANNING electron microscopes, SEMICONDUCTOR devices, PREDICTION models, SEMICONDUCTOR technology, ETCHING, BIAS correction (Topology), MEASUREMENT errors

المؤلفون: Thu Ha Vu, Thi¹ (AUTHOR) havuthithu96@pukyong.ac.kr, Hung Vo, Tan² (AUTHOR) eve1502@naver.com, Nhan Nguyen, Trong¹ (AUTHOR) nguyennhan8521@gmail.com, Choi, Jaeyeop² (AUTHOR) eve1502@naver.com, Mondal, Sudip³ (AUTHOR) dr.sudipmondal@gmail.com, Oh, Junghwan⁴ (AUTHOR) jungoh@pknu.ac.kr

المصدر: IEEE Transactions on Semiconductor Manufacturing. Nov2024, Vol. 37 Issue 4, p591-601. 11p.

مصطلحات موضوعية: SEMICONDUCTOR devices, ACOUSTIC imaging, POWER semiconductors, IMAGE segmentation, ULTRASONIC imaging

المؤلفون: von Jouanne, Annette¹ (AUTHOR) emmanuel_agamloh@baylor.edu, Agamloh, Emmanuel¹ (AUTHOR), Yokochi, Alex² (AUTHOR) alex_yokochi@baylor.edu

المصدر: Energies (19961073). Jan2025, Vol. 18 Issue 1, p164. 28p.

مصطلحات موضوعية: *MATRIX converters, *SEMICONDUCTOR devices, *ELECTRICAL load, *OVERVOLTAGE, *IDEAL sources (Electric circuits)

المؤلفون: Sakthiram, T.¹ (AUTHOR), Yogesh, L.¹ (AUTHOR), Srikanth, Rahul¹ (AUTHOR), Prabhakar, M.² (AUTHOR) prabhakar.m@vit.ac.in, Varesi, Kazem³ (AUTHOR)

المصدر: Scientific Reports. 1/2/2025, Vol. 15 Issue 1, p1-25. 25p.

مصطلحات موضوعية: *POWER electronics, *SEMICONDUCTOR devices, *MICROGRIDS, *VOLTAGE, *CAPACITORS

المؤلفون: Ma, Yaqiang¹ (AUTHOR), Yang, Guoliang¹ (AUTHOR), Wang, Zhen² (AUTHOR) wangzhen@htu.edu.cn, Wei, Dong¹ (AUTHOR), Yu, Heng¹ (AUTHOR), Liu, Ming¹ (AUTHOR), Zhao, Yidan¹ (AUTHOR), Sun, Xiaoxin¹ (AUTHOR), Zhao, Xu¹ (AUTHOR) zhaoxu@htu.edu.cn, Dai, Xianqi¹ (AUTHOR) xqdai@hte.edu.cn

المصدر: Semiconductors. Dec2024, Vol. 58 Issue 12, p1006-1015. 10p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *MAGNETIC semiconductors, *ELECTRON configuration, *ELECTRONIC modulation, *ELECTRIC fields

المؤلفون: Younsi, Ahmed Memdouh¹ (AUTHOR) ahmed.younsi@univ-biskra.dz, Elbar, Mohamed² (AUTHOR) m.elbar@univ-djelfa.dz, Rabehi, Abdelaziz³ (AUTHOR) abdalaziz.rabehi@univ-djelfa.dz

المصدر: Semiconductors. Dec2024, Vol. 58 Issue 12, p984-992. 9p.

مصطلحات موضوعية: *SOLAR energy conversion, *SEMICONDUCTOR devices, *PHOTOVOLTAIC cells, *OPTOELECTRONIC devices, *PEROVSKITE

المؤلفون: Fadlliyana, Malika¹, Fajariah, Nurul¹, Nurwantoro, Pekik¹, Prayogi, Harmon², Purnawati, Diki³, Oktavina, Cristina Wulan¹, Nugraheni, Ari Dwi¹, Sholihun, Sholihun¹ sholihun@ugm.ac.id

المصدر: Trends in Sciences. Dec2024, Vol. 21 Issue 12, p1-15. 15p.

مصطلحات موضوعية: *GALLIUM nitride, *SEMICONDUCTOR devices, *STRUCTURAL stability, *SYMMETRY, *MONOMOLECULAR films

المؤلفون: Mizani, Amirreza¹ (AUTHOR), Gao, Hang¹ (AUTHOR) hang.gao@wsu.edu, Amraei, Amin² (AUTHOR), Khaburi, Davood Arab² (AUTHOR)

المصدر: International Journal of Circuit Theory & Applications. Dec2024, Vol. 52 Issue 12, p6275-6301. 27p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *FUEL cells, *RENEWABLE energy sources, *FUEL systems, *VOLTAGE, *ELECTRIC current rectifiers

Alternate Title: Research Progress on Plasma Etching Resistant Coating Materials and Preparation Techniques.

المؤلفون: 马凯¹, 田飞¹, 李长久¹, 李成新¹

المصدر: Nonferrous Metals Engineering. Dec2024, Vol. 14 Issue 12, p39-52. 14p.

مصطلحات موضوعية: *PLASMA etching, *SEMICONDUCTOR devices, *SHORT circuits, *MANUFACTURING processes, *PLASMA spraying

المؤلفون: Wampler, W. R., Vizkelethy, G., Titze, M.

المصدر: Journal of Applied Physics; 11/28/2024, Vol. 136 Issue 20, p1-8, 8p

مصطلحات موضوعية: DISTRIBUTION (Probability theory), FIELD-effect transistors, SEMICONDUCTOR devices, STATISTICAL models, STATISTICS, NEUTRON irradiation

المؤلفون: Landesman, J. P., Diak, E., LaPierre, R. R., Levallois, C., Ghanad-Tavakoli, S.

المصدر: Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-10, 10p

مصطلحات موضوعية: MOLECULAR beam epitaxy, ELECTRIC field effects, ETCHING techniques, SEMICONDUCTOR devices, ETCHING

المؤلفون: Zakrzewski, J., Pawlak, M., Matsuda, O., Todorovic, D., Liu, J.

المصدر: Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-4, 4p

مصطلحات موضوعية: PLASMA physics, MATERIALS science, BOLTZMANN'S equation, DOPED semiconductors, MULTILAYERED thin films, NANOWIRES, SPACE charge, SEMICONDUCTOR devices

المؤلفون: Fuchs, C.^1,2 (AUTHOR) laurens.molenkamp@physik.uni-wuerzburg.de, Hofer, M.^1,2 (AUTHOR), Fürst, L.^1,2 (AUTHOR), Shamim, S.^1,2 (AUTHOR), Kießling, T.^1,2 (AUTHOR), Buhmann, H.^1,2 (AUTHOR), Molenkamp, L. W.^1,2 (AUTHOR)

المصدر: Journal of Applied Physics. 11/7/2023, Vol. 134 Issue 17, p1-10. 10p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *TEMPERATURE effect, *LOW temperatures, *OHMIC resistance, *QUANTUM wells, *QUANTUM transitions

المؤلفون: Ai, Jiale¹ (AUTHOR), Qin, Mingli¹ (AUTHOR), Xue, Maodeng¹ (AUTHOR), Cao, Chenzhe¹ (AUTHOR), Zhang, Jian² (AUTHOR) 3239@usts.edu.cn, Kuklin, Artem V.³ (AUTHOR), Wang, Huide⁴ (AUTHOR), Zhang, Han⁴ (AUTHOR), Zhang, Qian¹ (AUTHOR), Ågren, Hans³ (AUTHOR) hans.agren@physics.uu.se, Gao, Lingfeng¹ (AUTHOR) gaolingfeng@hznu.edu.cn

المصدر: Advanced Functional Materials. Nov2024, Vol. 34 Issue 48, p1-29. 29p.

مصطلحات موضوعية: *SEMICONDUCTOR materials, *SEMICONDUCTOR devices, *OPTOELECTRONIC devices, *VISIBLE spectra, *NANOSTRUCTURED materials, *IRRADIATION

المؤلفون: Ghelichi, Armin¹ (AUTHOR), Varesi, Kazem¹ (AUTHOR) k.varesi@sut.ac.ir, Zeinaly, Amirhossein¹ (AUTHOR), Prabhakar, Mahalingam² (AUTHOR)

المصدر: International Journal of Circuit Theory & Applications. Nov2024, Vol. 52 Issue 11, p5766-5785. 20p.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *VOLTAGE, *CAPACITORS, *DIODES, *COMPARATIVE studies, *CAPACITOR switching

المؤلفون: Fan, Xueshuo¹ (AUTHOR), Hong, Enliu¹ (AUTHOR), Wang, Peixi¹ (AUTHOR), Fang, Xiaosheng¹ (AUTHOR) xshfang@fudan.edu.cn

المصدر: Advanced Functional Materials. Oct2024, p1. 10p. 6 Illustrations.

مصطلحات موضوعية: *SEMICONDUCTOR devices, *OPTICAL communications, *CRYSTAL growth, *OPTOELECTRONIC devices, *PEROVSKITE