المؤلفون: Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

المصدر: Applied Surface Science Advances, Vol 25, Iss , Pp 100676- (2025)

مصطلحات موضوعية: A-IGZO, Contact resistance, Schottky barrier height, Metal-interlayer-semiconductor, Oxygen areal density, Plasma treatment, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2666523924001041; https://doaj.org/toc/2666-5239

URL الوصول: https://doaj.org/article/d8771e0aaf3942fbabffe4d2a2a1a8c3

المؤلفون: Chen, Jiaqi

المساهمون: Robertson, John

مصطلحات موضوعية: Band Offset, Band Structure, CaF2, Castep, Density Functional Theory, GGA+U, Metal Oxide, Schottky Barrier Height, SiO2, sX, VASP, WSe2

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.888915

المؤلفون: Ling-Feng Mao, S.K. Li, P. Cheng, L.J. Zhang

المصدر: International Journal of Electrical Power & Energy Systems, Vol 161, Iss , Pp 110172- (2024)

مصطلحات موضوعية: Inverse problem, Schottky barrier height, Convolutional neural network, Metal/semiconductor contact, Thermionic emission, Production of electric energy or power. Powerplants. Central stations, TK1001-1841

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S0142061524003934; https://doaj.org/toc/0142-0615

URL الوصول: https://doaj.org/article/e93b4bb0f7104d6d87c0a90e73ac30ab

المؤلفون: Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

المصدر: Crystals, Vol 15, Iss 1, p 56 (2025)

مصطلحات موضوعية: p++-InGaN, contact resistivity, Schottky barrier height, polarization effects, carrier transport mechanism, GaN-based heterostructures, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/15/1/56; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/0d3b57e52abb48c58e8a1dc1465ebb83

المؤلفون: Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer

المصدر: Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)

مصطلحات موضوعية: contact resistance, modulation doping, nickel silicide, Schottky barrier height, silicon nanowires, transfer length method, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/cc872ae237864610802310a42741a084

المؤلفون: Jingyi Ma, Jina Wang, Quan Chen, Shengdi Chen, Mengmeng Yang, Yiming Sun, Zhaoqiang Zheng, Nengjie Huo, Yong Yan, Jingbo Li, Wei Gao

المصدر: Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)

مصطلحات موضوعية: logic rectifiers, polarity‐switching, schottky barrier height, self‐driven photodiodes, Van der Waals heterojunction, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/643686b3db27428c8a50f095b70c23bd

المؤلفون: D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini

المصدر: Applied Physics Express, Vol 17, Iss 10, p 104001 (2024)

مصطلحات موضوعية: p-GaN gate HEMTs, threshold voltage instabilities, gate leakage current, Schottky barrier height, hole injection, Physics, QC1-999

Relation: https://doi.org/10.35848/1882-0786/ad7f20; https://doaj.org/toc/1882-0786; https://doaj.org/article/5a5f50e47a10457bb368574ebbdf76c4

الاتاحة: https://doi.org/10.35848/1882-0786/ad7f20
https://doaj.org/article/5a5f50e47a10457bb368574ebbdf76c4

المؤلفون: Mamor, Mohammed, Bouziane, Khalid, Chakir, Hind, Ruterana, Pierre

المساهمون: Université Cadi Ayyad Marrakech (UCA), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Internationale de Rabat (UIR)

المصدر: ISSN: 0921-4526 ; EISSN: 1873-2135.

مصطلحات موضوعية: Barrier height Inhomogeneities, Temperature dependence of Schottky barrier height, Conduction mode in Pt/n-GaN structure, [PHYS]Physics [physics]

Relation: hal-04621854; https://normandie-univ.hal.science/hal-04621854; https://normandie-univ.hal.science/hal-04621854/document; https://normandie-univ.hal.science/hal-04621854/file/Paper-Physica%20B-MMamor-2024-accepted-final-version.pdf

الاتاحة: https://normandie-univ.hal.science/hal-04621854
https://normandie-univ.hal.science/hal-04621854/document
https://normandie-univ.hal.science/hal-04621854/file/Paper-Physica%20B-MMamor-2024-accepted-final-version.pdf
https://doi.org/10.1016/j.physb.2024.415965

المؤلفون: Madani Labed, Bo-In Park, Jekyung Kim, Jang Hyeok Park, Ji Young Min, Hee Jae Hwang, Jeehwan Kim, You Seung Rim

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Physiology, Sociology, Cancer, Infectious Diseases, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, schottky barrier photodiode, schottky barrier height, interfacial state density, developing advanced electronic, 150 ° c, 3000 ms ), 100 times greater, w schottky contact, w contact alone, 3 , 2 , propose ultrahigh photoresponsivity, 7044 %, respectively, graphene monolayer inserted, ultrahigh photoresponsivity, graphene monolayer, delay times

Relation: https://figshare.com/articles/journal_contribution/Ultrahigh_Photoresponsivity_of_W_Graphene_-Ga_sub_2_sub_O_sub_3_sub_Schottky_Barrier_Deep_Ultraviolet_Photodiodes/25196624

الاتاحة: https://doi.org/10.1021/acsnano.3c12415.s001
https://figshare.com/articles/journal_contribution/Ultrahigh_Photoresponsivity_of_W_Graphene_-Ga_sub_2_sub_O_sub_3_sub_Schottky_Barrier_Deep_Ultraviolet_Photodiodes/25196624

المؤلفون: Žerjav, Gregor, Say, Zafer, 1987, Zavašnik, Janez, Finšgar, Matjaž, Langhammer, Christoph, 1978, Pintar, Albin

المصدر: Journal of Environmental Chemical Engineering. 11(3)

مصطلحات موضوعية: Air cleaning, Bisphenol A, Wastewater treatment, NO abatement x, H -deNO 2 x, Plasmonic noble metal, Photothermal catalysis, Heterogeneous photocatalysis, Thermal catalysis, Visible-light illumination, Microreactor, TiO 2, Schottky barrier height, Pt particles

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/536439
https://research.chalmers.se/publication/536439/file/536439_Fulltext.pdf

المؤلفون: Wanghao LI, Ting YANG, Zhen ZHANG, Shengbo SANG, Aoqun JIAN

المصدر: Taiyuan Ligong Daxue xuebao, Vol 53, Iss 6, Pp 1054-1060 (2022)

مصطلحات موضوعية: hot electron injection efficiency, metal-semiconductor contact, photon energy, metal nanoparticle size, schottky barrier height, Chemical engineering, TP155-156, Materials of engineering and construction. Mechanics of materials, TA401-492, Technology

وصف الملف: electronic resource

Relation: https://tyutjournal.tyut.edu.cn/englishpaper/show-1987.html; https://doaj.org/toc/1007-9432

URL الوصول: https://doaj.org/article/7307f72177f94f6eb408e8770e965345

المؤلفون: Dong Hoon Shin, Duk Hyun Lee, Sang‐Jun Choi, Seonyeong Kim, Hakseong Kim, Kenji Watanabe, Takashi Taniguchi, Eleanor E. B. Campbell, Sang Wook Lee, Suyong Jung

المصدر: Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)

مصطلحات موضوعية: 2D semiconductors, electron and hole field emission, Fowler‐Nordheim tunneling, Schottky‐barrier height, van der Waals vertical heterostructures, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/29df69ea78ef4a12ae3f6fca7bfd507d

المؤلفون: Xiaoshi Jin, Shouqiang Zhang, Mengmeng Li, Xi Liu, Meng Li

المصدر: Heliyon, Vol 9, Iss 3, Pp e13809- (2023)

مصطلحات موضوعية: Schottky barrier height, Schottky contact, TFET, Built-in potential, Science (General), Q1-390, Social sciences (General), H1-99

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2405844023010162; https://doaj.org/toc/2405-8440

URL الوصول: https://doaj.org/article/844ba976e54c466b8374d8309e5269bd

المؤلفون: Iksoo Park, Seonghwan Shin, Jungsik Kim, Bo Jin, Jeong-Soo Lee

المصدر: IEEE Access, Vol 10, Pp 84689-84693 (2022)

مصطلحات موضوعية: Germanium, metal–insulator–semiconductor, thermal stability, Schottky barrier height, Fermi-level pinning, contact resistivity, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9853537/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/a7d97cfc704e453dbb4e41e8d6f529be

المؤلفون: Kentaro Kasahara, Kazuki Senga, Mitsuo Sakashita, Shigehisa Shibayama, Osamu Nakatsuka

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 744-750 (2022)

مصطلحات موضوعية: Germanium, metal/semiconductor contact, epitaxy, Schottky barrier height, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9666932/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/c3bcf96c3cb14968a406b79d29f4ae25

المؤلفون: Zheng, Shan

المساهمون: Robertson, John

مصطلحات موضوعية: 620.1, Graphene, TMD, FET, Contact resistance, Schottky barrier height, CVD

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.763691

المؤلفون: Sungjoo Song, Seung-Hwan Kim, Kyu-Hyun Han, Hyung-jun Kim, Hyun-Yong Yu

مصطلحات موضوعية: Medicine, Cancer, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, self alignment effect, schottky barrier height, performance device applications, induced gap states, extremely challenging problem, excellent ohmic contacts, si substrate resulted, work function differences, cmos logical circuitry, drain contact structure, level using graphene, gr effectively modulated, metal work function, one semiconductor type, sbh values reduced, work function, contact structure, type si, sbh values, effectively alleviated, contact structures, contact resistance, contact metal, universal source

Relation: https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965

الاتاحة: https://doi.org/10.1021/acsami.3c14386.s001
https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965

المؤلفون: Min-Yeong Kim, Dong-Wook Byun, Geon-Hee Lee, Sujitra Pookpanratana, Qiliang Li, Sang-Mo Koo

المصدر: Materials Research Express, Vol 10, Iss 7, p 075902 (2023)

مصطلحات موضوعية: Ga2O3, schottky diodes, carrier transport mechanism, schottky barrier height, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/ace0a4; https://doaj.org/toc/2053-1591; https://doaj.org/article/91305143f8744e0eaa4abfed36a985be

الاتاحة: https://doi.org/10.1088/2053-1591/ace0a4
https://doaj.org/article/91305143f8744e0eaa4abfed36a985be

المؤلفون: Kung-Chu Chen, Kuan-Wun Lin, Jenn-Gwo Hwu

المصدر: IEEE Access, Vol 9, Pp 163929-163937 (2021)

مصطلحات موضوعية: Metal-insulator-semiconductor (MIS), Schottky diode, Schottky barrier height, ultra-thin oxide, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9641778/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/e9f2fd4e5c3742bab5dd36b29d3e3672

المؤلفون: X. F. Hu, S. J. Li, J. Wang, Z. M. Jiang, X. J. Yang

المصدر: Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)

مصطلحات موضوعية: Si nanowires, Conductive atomic force microscopy, Conductive property, Size dependence, Schottky barrier height, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-020-3277-3; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/cf0910cad6c64ef09e3367eccd37a4ab