يعرض 1 - 16 نتائج من 16 نتيجة بحث عن '"SAYADI, LUCA"', وقت الاستعلام: 0.42s تنقيح النتائج
  1. 1
    Academic Journal
    Trap-state mapping to model GaN transistors dynamic performance

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المساهمون: Ministero dell’Istruzione, dell’Università e della Ricerca

    المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-022-05830-7
    https://www.nature.com/articles/s41598-022-05830-7.pdf
    https://www.nature.com/articles/s41598-022-05830-7

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  2. 2
    Academic Journal
    Dynamic Effects in p-GaN Gate GaN-on-Si Heterojunction Field Effect Transistors

    المؤلفون: SAYADI, LUCA

    المساهمون: Iannaccone, Giuseppe

    المصدر: http://etd.adm.unipi.it/theses/available/etd-02272020-112721/.

    مصطلحات موضوعية: ING-INF/01

    وصف الملف: application/pdf

    Relation: http://etd.adm.unipi.it/theses/available/etd-02272020-112721/

    الاتاحة: http://etd.adm.unipi.it/theses/available/etd-02272020-112721/

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  3. 3
    Periodical
    On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Baratella, Giulio, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المصدر: IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 3 p1646-1653, 8p


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  4. 4
    Academic Journal
    Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المساهمون: INTERNET OF THINGS: SVILUPPI METODOLOGICI, TECNOLOGICI E APPLICATIVI project, co-founded, Italian Ministry of Education, Universities and Research, “Fondo per il finanziamento dei dipartimenti universitari di eccellenza” initiative

    المصدر: IEEE Journal of Emerging and Selected Topics in Power Electronics ; volume 10, issue 5, page 5019-5026 ; ISSN 2168-6777 2168-6785

    الاتاحة: http://dx.doi.org/10.1109/jestpe.2021.3077127
    http://xplorestaging.ieee.org/ielx7/6245517/9908063/09420696.pdf?arnumber=9420696

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  5. 5
    Conference
    Charge Trapping in GaN Power Transistors: Challenges and Perspectives

    المؤلفون: Meneghini, Matteo, Modolo, Nicola, Nardo, Arianna, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Koller, Christian, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico

    المساهمون: ECSEL Joint Undertaking (JU)

    المصدر: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

    الاتاحة: http://dx.doi.org/10.1109/bcicts50416.2021.9682455
    http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682455.pdf?arnumber=9682455

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  6. 6
    Academic Journal
    Progetto di un amplificatore operazionale di precisione basato su una architettura a condensatori commutati estremamente compatta

    المؤلفون: SAYADI, LUCA

    المساهمون: Bruschi, Paolo, Neri, Bruno

    المصدر: http://etd.adm.unipi.it/theses/available/etd-09032015-124155/.

    مصطلحات موضوعية: INGEGNERIA DELL'INFORMAZIONE

    وصف الملف: application/pdf

    Relation: http://etd.adm.unipi.it/theses/available/etd-09032015-124155/

    الاتاحة: http://etd.adm.unipi.it/theses/available/etd-09032015-124155/

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  7. 7
    Academic Journal
    A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المصدر: IEEE Electron Device Letters ; volume 42, issue 5, page 673-676 ; ISSN 0741-3106 1558-0563

    الاتاحة: http://dx.doi.org/10.1109/led.2021.3067796
    http://xplorestaging.ieee.org/ielx7/55/9415873/09382285.pdf?arnumber=9382285

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  8. 8
    Academic Journal
    Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

    المؤلفون: Minetto, Andrea, Modolo, Nicola, Sayadi, Luca, Koller, Christian, Ostermaier, Clemens, Meneghini, Matteo, Zanoni, Enrico, Prechtl, Gerhard, Sicre, Sebastien, Deutschmann, Bernd, Haberlen, Oliver

    المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 10, page 5003-5008 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2021.3101182
    http://xplorestaging.ieee.org/ielx7/16/9546692/09507002.pdf?arnumber=9507002

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  9. 9
    Academic Journal
    Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements

    المؤلفون: Nardo, Arianna, Meneghini, Matteo, Barbato, Alessandro, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Sicre, Sebastien, Sayadi, Luca, Prechtl, Gerhard, Curatola, Gilberto

    المصدر: Applied Physics Express ; volume 13, issue 7, page 074003 ; ISSN 1882-0778 1882-0786

    الاتاحة: http://dx.doi.org/10.35848/1882-0786/ab9623
    https://iopscience.iop.org/article/10.35848/1882-0786/ab9623
    https://iopscience.iop.org/article/10.35848/1882-0786/ab9623/pdf

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  10. 10
    Academic Journal
    Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المصدر: Semiconductor Science and Technology ; volume 36, issue 1, page 014001 ; ISSN 0268-1242 1361-6641

    الاتاحة: http://dx.doi.org/10.1088/1361-6641/abc456
    https://iopscience.iop.org/article/10.1088/1361-6641/abc456
    https://iopscience.iop.org/article/10.1088/1361-6641/abc456/pdf

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  11. 11
    Academic Journal
    Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

    المؤلفون: Minetto, Andrea, Deutschmann, Bernd, Modolo, Nicola, Nardo, Arianna, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Prechtl, Gerhard, Sicre, Sebastien, Haberlen, Oliver

    المصدر: IEEE Transactions on Electron Devices ; volume 67, issue 11, page 4602-4605 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2020.3025983
    http://xplorestaging.ieee.org/ielx7/16/9237191/09214895.pdf?arnumber=9214895

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  12. 12
    Academic Journal
    The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

    المؤلفون: SAYADI, LUCA, G. Iannaccone, O. Häberlen, G. Fiori, M. Tomberger, L. O. Knuuttila, CURATOLA, GILBERTO

    المساهمون: Sayadi, Luca, Iannaccone, G., Häberlen, O., Fiori, G., Tomberger, M., Knuuttila, L. O., Curatola, Gilberto

    مصطلحات موضوعية: III-V semiconductor, aluminium compound, capacitance, elemental semiconductor, gallium compound, leakage current, emiconductor epitaxial layer, emiconductor growth, ilicon, wide band gap semiconductor, AlN-Si, GaN-on-Si epitaxial stack, Si depletion region, carrier generation, considered structure, current-voltage characteristic, device simulation, electrical characterization, n-doped silicon, n-type structure, p-Si substrate, p-type structure, ilicon substrate, vertical leakage, Aluminum nitride, Electron trap, Epitaxial growth, Silicon, Substrate, Tunneling

    Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000418753200008; volume:65; issue:1; firstpage:51; lastpage:58; numberofpages:8; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11568/909403; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85037659972

    الاتاحة: http://hdl.handle.net/11568/909403
    https://doi.org/10.1109/TED.2017.2773670

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  13. 13
    Academic Journal
    Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

    المؤلفون: Sayadi, Luca, Iannaccone, Giuseppe, Sicre, Sebastien, Haberlen, Oliver, Curatola, Gilberto

    المصدر: IEEE Transactions on Electron Devices ; volume 65, issue 6, page 2454-2460 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2018.2828702
    http://xplorestaging.ieee.org/ielx7/16/8359231/08352106.pdf?arnumber=8352106

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  14. 14
    Academic Journal
    Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors.

    المؤلفون: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    المصدر: Semiconductor Science & Technology; Jan2021, Vol. 36 Issue 1, p1-10, 10p

    مصطلحات موضوعية: POWER transistors, MODULATION-doped field-effect transistors, GALLIUM, GALLIUM nitride


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  15. 15
    Conference
    Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials

    المؤلفون: Carlo De Santi, Nicola Modolo, Andrea Minetto, Luca Sayadi, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

    المساهمون: DE SANTI, Carlo, Modolo, Nicola, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    Relation: ispartofbook:Proceedings of the 2022 International Workshop on Nitride Semiconductors; 022 International Workshop on Nitride Semiconductors; https://hdl.handle.net/11577/3462171

    الاتاحة: https://hdl.handle.net/11577/3462171

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  16. 16
    Conference
    Defect States Extraction from Stretched Exponential (de)trapping Response

    المؤلفون: Carlo De Santi, Nicola Modolo, Andrea Minetto, Luca Sayadi, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

    المساهمون: DE SANTI, Carlo, Modolo, Nicola, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

    Relation: ispartofbook:Proceedings of Compound Semiconductor Week 2022; Compound Semiconductor Week 2022; http://hdl.handle.net/11577/3457445

    الاتاحة: http://hdl.handle.net/11577/3457445

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