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1
المؤلفون: Randall L. Headrick, Andrew R. Melnyk, Yongli Gao, S. Schoemann, Antti Mäkinen
المصدر: Physical Review B. 60:14683-14687
مصطلحات موضوعية: Optics, Materials science, business.industry, Chemical physics, Molecular film, business, Domain (software engineering)
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2
المؤلفون: B. Krueger, S. Schoemann, F. Schumann, H. Pohl
المصدر: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
مصطلحات موضوعية: Engineering, business.industry, Frequency domain, Bandwidth (signal processing), Path (graph theory), Electronic engineering, Oscilloscope, Reflectometry, business, Electrical impedance, Signal, Domain (software engineering)
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3
المؤلفون: M. G. Mason, Andrew R. Melnyk, S. Schoemann, Yongli Gao, Antti Mäkinen, D. A. Mantell, Randall L. Headrick, A. A. Muenter
المصدر: Photoinduced Charge Transfer.
مصطلحات موضوعية: Materials science, Chemical physics, Excited state, Dynamics (mechanics), Molecular film, Femtosecond
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4
المؤلفون: Andrew R. Melnyk, M. G. Mason, Antti J. Maekinen, A. A. Muenter, Yongli Gao, S. Schoemann
المصدر: SPIE Proceedings.
مصطلحات موضوعية: Organic semiconductor, Electron transfer, Chemistry, Photoemission spectroscopy, Excited state, Inverse photoemission spectroscopy, Femtosecond, Angle-resolved photoemission spectroscopy, Atomic physics, Photochemistry, Acceptor
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5Academic Journal
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6
المؤلفون: Mauro Ciappa, M. Stangoni, M. von Sprekelsen, David Alvarez, Theophilos Maltezopoulos, Louis Hellemans, Martin Kittler, Marc Fouchier, Marcel A. Verheijen, Roland Wiesendanger, Pierre Eyben, S. Schoemann, Wolfgang Fichtner, Trudo Clarysse, S. Saraf, Petr Formanek, Wilfried Vandervorst, Rafi Shikler, Vito Raineri, Nicolas Barreau, Sascha Sadewasser, Filippo Giannazzo, S. A. M. Mentink, Natasja Duhayon, Thilo Glatzel, Yossi Rosenwaks, D. Goghero
المصدر: Scopus-Elsevier
Journal of vacuum science & technology. B, Microelectronics and nanometer structures 22 (2004): 385–393. doi:10.1116/1.1638775
info:cnr-pdr/source/autori:Duhayon N; Eyber P; Fouchier M; Clarysee T; Vandervorst W; Alvarez D; Schoemann S; Ciappa M; Stangoni M; Fichtner W; Formanek P; Kittler M; Raineri V; Giannazzo F; Goghero D; Rosenwaks Y; Shikler R; Saraf S; Sadewasser S; Barreau N; Glatzel T; Verheijen M; Mentink SAM; von Sprekelsen M; Maltezopoulos T; Wiesendanger R; Hellemans L/titolo:Assessing the performance of two-dimensional dopant profiling techniques/doi:10.1116%2F1.1638775/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2004/pagina_da:385/pagina_a:393/intervallo_pagine:385–393/volume:22مصطلحات موضوعية: Profiling (computer programming), Scanning spreading resistance microscopy, Materials science, Dopant, Dynamic range, Bipolar junction transistor, General Engineering, Nanotechnology, Semiconductor device, semiconductors, Electron holography, Scanning capacitance microscopy, Calibration, Electronic engineering, Sample preparation, Transmission electron microscopy