يعرض 1 - 20 نتائج من 52 نتيجة بحث عن '"Ryu, Kevin K."', وقت الاستعلام: 0.52s تنقيح النتائج
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    المصدر: IEEE Transactions on Applied Superconductivity; August 2023, Vol. 33 Issue: 5 p1-7, 7p

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    المساهمون: Dhar, Nibir K., Dutta, Achyut K., Babu, Sachidananda R.

    المصدر: Image Sensing Technologies: Materials, Devices, Systems, and Applications VI

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    المساهمون: Lincoln Laboratory, Massachusetts Institute of Technology. Department of Aeronautics and Astronautics, Massachusetts Institute of Technology. Department of Earth, Atmospheric, and Planetary Sciences, MIT Kavli Institute for Astrophysics and Space Research, Ryu, Kevin K., Burke, Barry E., Clark, Harry R., Jr., Lambert, Renee D., O'Brien, Peter W., Suntharalingam, Vyshnavi, Ward, Christopher M., Warner, Keith, Bautz, Marshall W., Binzel, Richard P., Kissel, Steve E., Masterson, Rebecca A.

    المصدر: SPIE

    مصطلحات موضوعية: geo, info

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    المساهمون: Lincoln Laboratory, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Palacios, Tomas, Chung, J. W., Ryu, Kevin K.

    المصدر: IEEE

    وصف الملف: application/pdf

    Relation: http://dx.doi.org/10.1109/ESSDERC.2010.5617745; Proceedings of the European Solid-State Device Research Conference 2010 (ESSDERC); http://hdl.handle.net/1721.1/72603; Chung, J. W. et al. “GaN-on-Si Technology, a New Approach for Advanced Devices in Energy and Communications.” Proceedings of the European Solid-State Device Research Conference 2010 (ESSDERC). 52–56. © Copyright 2010 IEEE; orcid:0000-0002-2190-563X

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    المساهمون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Sodini, Charles G., Nausieda, Ivan A., Ryu, Kevin K., He, David Da, Akinwande, Akintunde Ibitayo, Bulovic, Vladimir

    المصدر: IEEE

    وصف الملف: application/pdf

    Relation: http://dx.doi.org/10.1109/IEDM.2009.5424345; IEEE International Electron Devices Meeting; E-ISBN: 978-1-4244-5640-6; INSPEC Accession Number: 11207408; http://hdl.handle.net/1721.1/60019; Nausieda, I. et al. “Dual threshold voltage integrated organic technology for ultralow-power circuits.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © 2009, IEEE; orcid:0000-0003-3001-9223; orcid:0000-0002-0960-2580; orcid:0000-0002-0413-8774

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    المساهمون: Holland, Andrew D., Beletic, James

    المصدر: SPIE Proceedings ; High Energy, Optical, and Infrared Detectors for Astronomy VI ; ISSN 0277-786X

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    المساهمون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Akinwande, Akintunde Ibitayo, Nausieda, Ivan A., Ryu, Kevin K., He, David Da, Bulovic, Vladimir, Sodini, Charles G.

    المصدر: IEEE

    وصف الملف: application/pdf

    Relation: http://dx.doi.org/10.1109/TED.2010.2072550; IEEE Transactions on Electron Devices; INSPEC Accession Number: 11596967; http://hdl.handle.net/1721.1/71816; Nausieda, Ivan et al. “Dual Threshold Voltage Organic Thin-Film Transistor Technology.” IEEE Transactions on Electron Devices 57.11 (2010): 3027–3032. Web.; orcid:0000-0003-3001-9223; orcid:0000-0002-0960-2580; orcid:0000-0002-0413-8774