المؤلفون: Ryu, Hojoon, Kang, Junzhe, Park, Minseong, Bae, Byungjoon, Zhao, Zijing, Rakheja, Shaloo, Lee, Kyusang, Zhu, Wenjuan

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/2307.10473

المؤلفون: Zhao, Zijing, Kang, Junzhe, Tunga, Ashwin, Ryu, Hojoon, Shukla, Ankit, Rakheja, Shaloo, Zhu, Wenjuan

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/2307.03660

المؤلفون: Lee, Hanwool, Ryu, Hojoon, Kang, Junzhe, Zhu, Wenjuan

المساهمون: Defense Advanced Research Projects Agency

المصدر: IEEE Electron Device Letters ; volume 45, issue 3, page 312-315 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2024.3352046
http://xplorestaging.ieee.org/ielx7/55/10449685/10387459.pdf?arnumber=10387459

المؤلفون: Lee, Hanwool, Ryu, Hojoon, Kang, Junzhe, Zhu, Wenjuan

المساهمون: Defense Advanced Research Projects Agency

المصدر: IEEE Journal of the Electron Devices Society ; volume 11, page 167-173 ; ISSN 2168-6734

الاتاحة: http://dx.doi.org/10.1109/jeds.2023.3253137
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10061582.pdf?arnumber=10061582

المؤلفون: Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O'Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan

المصدر: Nano Letters; 10/9/2024, Vol. 24 Issue 40, p12353-12360, 8p

المؤلفون: Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

المصدر: Nano Letters; October 2024, Vol. 24 Issue: 40 p12353-12360, 8p

المؤلفون: Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

المصدر: Nano Letters ; volume 24, issue 40, page 12353-12360 ; ISSN 1530-6984 1530-6992

الاتاحة: http://dx.doi.org/10.1021/acs.nanolett.4c02069
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c02069

المؤلفون: Zhao, Zijing, Kang, Junzhe, Tunga, Ashwin, Ryu, Hojoon, Shukla, Ankit, Rakheja, Shaloo, Zhu, Wenjuan

المساهمون: Semiconductor Research Corporation

المصدر: ACS Nano ; volume 18, issue 4, page 2763-2771 ; ISSN 1936-0851 1936-086X

الاتاحة: http://dx.doi.org/10.1021/acsnano.3c03900
https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c03900

المؤلفون: Liu, Jialun, Ryu, Hojoon, Zhu, Wenjuan

المساهمون: National Science Foundation, Office of Naval Research, Kwanjeong Educational Foundation

المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 3, page 1334-1339 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2021.3049757
https://ieeexplore.ieee.org/ielam/16/9361759/9334403-aam.pdf
http://xplorestaging.ieee.org/ielx7/16/9361759/09334403.pdf?arnumber=9334403

المؤلفون: Ryu, Hojoon, Xu, Kai, Kim, Jinhong, Kang, Sangmin, Guo, Ji, Zhu, Wenjuan

المساهمون: National Science Foundation, Office of Naval Research

المصدر: IEEE Transactions on Electron Devices ; volume 66, issue 5, page 2359-2364 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2019.2907070
https://ieeexplore.ieee.org/ielaam/16/8694031/8682093-aam.pdf
http://xplorestaging.ieee.org/ielx7/16/8694031/08682093.pdf?arnumber=8682093

المؤلفون: Ryu, Hojoon, Wu, Haonan, Rao, Fubo, Zhu, Wenjuan

المساهمون: National Science Foundation, United States Department of Defense | United States Navy | Office of Naval Research

المصدر: Scientific Reports ; volume 9, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-019-56816-x
https://www.nature.com/articles/s41598-019-56816-x.pdf
https://www.nature.com/articles/s41598-019-56816-x

المؤلفون: Ryu, Hojoon, Kang, Junzhe, Park, Minseong, Bae, Byungjoon, Zhao, Zijing, Rakheja, Shaloo, Lee, Kyusang, Zhu, Wenjuan

المساهمون: Semiconductor Research Corporation

المصدر: ACS Applied Materials & Interfaces ; volume 15, issue 46, page 53671-53677 ; ISSN 1944-8244 1944-8252

الاتاحة: http://dx.doi.org/10.1021/acsami.3c10582
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c10582

المؤلفون: Lee, Hanwool, Ryu, Hojoon, Zhu, Wenjuan

المساهمون: Defense Advanced Research Projects Agency

المصدر: Applied Physics Letters ; volume 122, issue 11 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0134475
https://aip.scitation.org/doi/am-pdf/10.1063/5.0134475
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0134475/16785575/112103_1_online.pdf

المؤلفون: Ryu, Hojoon, Kang, Junzhe, Park, Minseong, Bae, Byungjoon, Zhao, Zijing, Rakheja, Shaloo, Lee, Kyusang, Zhu, Wenjuan

المصدر: ACS Applied Materials & Interfaces; 11/22/2023, Vol. 15 Issue 46, p53671-53677, 7p

المؤلفون: Zhao, Zijing, Xu, Kai, Ryu, Hojoon, Zhu, Wenjuan

المساهمون: Office of Naval Research, Division of Electrical, Communications and Cyber Systems

المصدر: ACS Applied Materials & Interfaces ; volume 12, issue 46, page 51820-51826 ; ISSN 1944-8244 1944-8252

الاتاحة: http://dx.doi.org/10.1021/acsami.0c13799
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c13799

المؤلفون: Ryu, Hojoon, Xu, Kai, Li, Dawei, Hong, Xia, Zhu, Wenjuan

المساهمون: U.S. Department of Energy, Office of Naval Research Global, Division of Electrical, Communications and Cyber Systems, Kwanjeong Educational Foundation

المصدر: Applied Physics Letters ; volume 117, issue 8 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0019555
http://aip.scitation.org/doi/am-pdf/10.1063/5.0019555
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0019555/20015175/080503_1_5.0019555.pdf

المؤلفون: Yao, Zihan, Ryu, Hojoon, Xu, Kai, Liu, Jialun, Cai, Yuhang, Yan, Yueming, Zhu, Wenjuan

المصدر: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

الاتاحة: http://dx.doi.org/10.1109/icsict.2018.8564988
http://xplorestaging.ieee.org/ielx7/8540788/8564801/08564988.pdf?arnumber=8564988

المؤلفون: Zhao, Zijing, Xu, Kai, Ryu, Hojoon, Zhu, Wenjuan

المصدر: ACS Applied Materials & Interfaces; 11/18/2020, Vol. 12 Issue 46, p51820-51826, 7p

المؤلفون: Zhao, Zijing, Xu, Kai, Ryu, Hojoon, Zhu, Wenjuan

المصدر: ACS Applied Materials & Interfaces; November 2020, Vol. 12 Issue: 46 p51820-51826, 7p

المؤلفون: Ryu, Hojoon

المساهمون: Zhu, Wenjuan

مصطلحات موضوعية: Ferroelectric devices, Ferroelectric material, Ferroelectric hafnium oxide, Ferroelectric capacitor, Ferroelectric tunneling junction, Non-volatile memory, Neuromorphic computing, Al-doped HfO2, Zr-doped HfO2

وصف الملف: application/pdf

Relation: http://hdl.handle.net/2142/106268

الاتاحة: http://hdl.handle.net/2142/106268