المؤلفون: Lemettinen, J., Okumura, H., Kim, I., Rudzinski, M., Grzonka, J., Palacios, T., Suihkonen, S.

المصدر: Journal of Crystal Growth 487 (2018) 50-56

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/1811.03534

المؤلفون: Rudziński, M. (Marcin), Burchardt, A. (Adam), Zyczkowski, K.

المصدر: Quantum vol. 8, pp. 1234:1-1234:21

مصطلحات الفهرس: info:eu-repo/semantics/article

URL: https://ir.cwi.nl/pub/34006

المؤلفون: Stajno, P., Rudziński, M., Salwa, P.

المصدر: European Urology Open Science ; volume 44, page S295 ; ISSN 2666-1683

الاتاحة: http://dx.doi.org/10.1016/s2666-1683(22)02151-6
https://api.elsevier.com/content/article/PII:S2666168322021516?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2666168322021516?httpAccept=text/plain

المؤلفون: Moszak, K., Olszewski, W., Pucicki, D., Serafińczuk, J., Opołczyńska, K., Rudziński, M., Kudrawiec, R., Hommel, D.

المصدر: Journal of Applied Physics; 10/28/2019, Vol. 126 Issue 16, pN.PAG-N.PAG, 6p, 5 Diagrams, 1 Chart, 2 Graphs

مصطلحات موضوعية: HETEROSTRUCTURES, DISLOCATION density, ALKALINE solutions, PHOSPHORIC acid, SCANNING electron microscopy, ETCHING, INDIUM gallium nitride, GALLIUM nitride

المؤلفون: Cakmak, H., Arslan, Engin, Rudzinski, M., Demirel, P., Ünalan, Hüsnü Emrah, Strupinski, W., Turan, Raşit, ÖZTÜRK, MEHMET AKİF, ÖZBAY, Ekmel

مصطلحات موضوعية: Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Relation: Cakmak H., Arslan E., Rudzinski M., Demirel P., ÜNALAN H. E. , Strupinski W., TURAN R., ÖZTÜRK M. A. , ÖZBAY E., "Indium rich InGaN solar cells grown by MOCVD", JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.25, ss.3652-3658, 2014; 3658; 84904244939; 3652; https://hdl.handle.net/11511/42040; 25; WOS:000339331200060

الاتاحة: https://hdl.handle.net/11511/42040
https://doi.org/10.1007/s10854-014-2070-4

المؤلفون: Rudziński, M., Jezierska, E., Weyher, J. L., Macht, L., Hageman, P. R., Borysiuk, J., Rödle, T. C., Jos, H. F. F., Larsen, P. K.

المصدر: physica status solidi (a) ; volume 204, issue 12, page 4230-4240 ; ISSN 1862-6300 1862-6319

الاتاحة: http://dx.doi.org/10.1002/pssa.200723324
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.200723324
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.200723324

المؤلفون: Tengborn, E., Rummukainen, M., Tuomisto, F., Saarinen, K., Rudzinski, M., Hageman, P.R., Larsen, P.K., Nordlund, A.

المساهمون: Department of Applied Physics, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: annihilation, GaN, misoriented, positron, vacancy

وصف الملف: application/pdf

Relation: Applied Physics Letters; Volume 89, issue 9; Tengborn , E , Rummukainen , M , Tuomisto , F , Saarinen , K , Rudzinski , M , Hageman , P R , Larsen , P K & Nordlund , A 2006 , ' Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition ' , Applied Physics Letters , vol. 89 , no. 9 , 091905 , pp. 1-3 . https://doi.org/10.1063/1.2338887; PURE UUID: ba27d2f1-1f14-48f3-963f-176df37e54d7; PURE ITEMURL: https://research.aalto.fi/en/publications/ba27d2f1-1f14-48f3-963f-176df37e54d7; PURE FILEURL: https://research.aalto.fi/files/13456009/1_2E2338887.pdf; https://aaltodoc.aalto.fi/handle/123456789/31128; URN:NBN:fi:aalto-201805222568

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/31128
https://doi.org/10.1063/1.2338887

المؤلفون: Antipov, S, Trifonov, A, Krause, S, Meledin, D, Kaurova, N, Rudzinski, M, Desmaris, V, Belitsky, V, Goltsman, G

المساهمون: The Ministry of Education and Science of Russian Federation

المصدر: Superconductor Science and Technology ; volume 32, issue 7, page 075003 ; ISSN 0953-2048 1361-6668

الاتاحة: http://dx.doi.org/10.1088/1361-6668/ab137b
http://iopscience.iop.org/article/10.1088/1361-6668/ab137b
http://iopscience.iop.org/article/10.1088/1361-6668/ab137b/pdf
https://iopscience.iop.org/article/10.1088/1361-6668/ab137b/pdf
https://iopscience.iop.org/article/10.1088/1361-6668/ab137b

المؤلفون: Moszak, K., Olszewski, W., Pucicki, D., Serafińczuk, J., Opołczyńska, K., Rudziński, M., Kudrawiec, R., Hommel, D.

المساهمون: Fundacja na rzecz Nauki Polskiej

المصدر: Journal of Applied Physics ; volume 126, issue 16 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.5100140
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5100140/15239457/165304_1_online.pdf

المؤلفون: PODGÓRSKI, A., RUDZIŃSKI, M., GRADOŃ, L.

المصدر: Chemical Engineering Communications ; volume 151, issue 1, page 125-146 ; ISSN 0098-6445 1563-5201

الاتاحة: https://doi.org/10.1080/00986449608936545
https://www.tandfonline.com/doi/pdf/10.1080/00986449608936545

المؤلفون: Kudrawiec, R.¹ robert.kudrawiec@pwr.wroc.pl, Rudziński, M.², Gladysiewicz, M.¹, Janicki, L.¹, Hageman, P. R.³, Strupiński, W.², Misiewicz, J.¹, Kucharski, R.⁴, Zając, M.⁴, Doradziński, R.⁴, Dwiliński, R.⁴

المصدر: Journal of Applied Physics. Mar2011, Vol. 109 Issue 6, p063528. 6p. 1 Black and White Photograph, 6 Graphs.

مصطلحات موضوعية: *ALUMINUM, *GALLIUM nitride, *HETEROSTRUCTURES, *SUBSTRATES (Materials science), *OSCILLATIONS

المؤلفون: Lemettinen, J., Kauppinen, C., Rudzinski, M., Haapalinna, A., Tuomi, T. O., Suihkonen, S.

المصدر: Lemettinen , J , Kauppinen , C , Rudzinski , M , Haapalinna , A , Tuomi , T O & Suihkonen , S 2017 , ' MOVPE growth of GaN on 6-inch SOI-substrates : Effect of substrate parameters on layer quality and strain ' , Semiconductor Science and Technology , vol. 32 , no. 4 , 045003 . https://doi.org/10.1088/1361-6641/aa5942

مصطلحات موضوعية: gallium nitride, metal-organic vapor phase epitaxy, silicon on insulator, x-ray topography

الاتاحة: https://cris.vtt.fi/en/publications/6a0d1f08-6bd9-45b1-b578-c132a10d2777
https://doi.org/10.1088/1361-6641/aa5942
http://www.scopus.com/inward/record.url?scp=85017018308&partnerID=8YFLogxK

المؤلفون: Dwiliński, R., Doradziński, R., Garczyński, J., Sierzputowski, L., Kucharski, R., Zajac, M., Rudziński, M., Strupiński, W., Serafińczuk, J., Kudrawiec, R.

المساهمون: Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Litton, Cole W., Piprek, Joachim, Yoon, Euijoon

المصدر: SPIE Proceedings ; Gallium Nitride Materials and Devices V ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.842539

المؤلفون: Bilska, B., Grzesinska, W., Tomaszewska, M., Rudzinski, M.

المصدر: Roczniki Naukowe Stowarzyszenia Ekonomistów Rolnictwa i Agrobiznesu; 2015, 17, 4 ; 1508-3535 ; 2450-7296

مصطلحات موضوعية: demo, eco

Relation: https://bibliotekanauki.pl/articles/865963.pdf; https://bibliotekanauki.pl/articles/865963

الاتاحة: https://bibliotekanauki.pl/articles/865963.pdf
https://bibliotekanauki.pl/articles/865963

المؤلفون: Sintonen, S., Rudzinski, M., Suihkonen, S., Jussila, H., Knetzger, M., Meissner, E., Danilewsky, A., Tuomi, T.O., Lipsanen, H.

Time: 530

Relation: Journal of applied physics; https://publica.fraunhofer.de/handle/publica/242026

الاتاحة: https://publica.fraunhofer.de/handle/publica/242026
https://doi.org/10.1063/1.4893901

المؤلفون: Krause, S, Meledin, D, Desmaris, V, Pavolotsky, A, Belitsky, V, Rudziński, M, Pippel, E

المصدر: Superconductor Science and Technology ; volume 27, issue 6, page 065009 ; ISSN 0953-2048 1361-6668

الاتاحة: http://dx.doi.org/10.1088/0953-2048/27/6/065009
http://stacks.iop.org/0953-2048/27/i=6/a=065009/pdf
http://stacks.iop.org/0953-2048/27/i=6/a=065009?key=crossref.6052e5d5db12f0adb8fd72c3a7912be9

المؤلفون: Rudziński, M., Kudrawiec, R., Kucharski, R., Dwiliński, R., Strupiński, W.

المصدر: physica status solidi c ; volume 10, issue 3, page 302-305 ; ISSN 1862-6351 1610-1642

الاتاحة: http://dx.doi.org/10.1002/pssc.201200693
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.201200693
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201200693

المؤلفون: Kucharski, R, Zając, M, Doradziński, R, Rudziński, M, Kudrawiec, R, Dwiliński, R

المصدر: Semiconductor Science and Technology ; volume 27, issue 2, page 024007 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/0268-1242/27/2/024007

المؤلفون: Welna, M., Kudrawiec, R., Motyka, M., Kucharski, R., Zając, M., Rudziński, M., Misiewicz, J., Doradziński, R., Dwiliński, R.

المصدر: Crystal Research and Technology ; volume 47, issue 3, page 347-350 ; ISSN 0232-1300 1521-4079

الاتاحة: http://dx.doi.org/10.1002/crat.201100443
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fcrat.201100443
https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.201100443

المؤلفون: Rudziński, M., Kudrawiec, R., Janicki, L., Serafinczuk, J., Kucharski, R., Zając, M., Misiewicz, J., Doradziński, R., Dwiliński, R., Strupiński, W.

المصدر: Journal of Crystal Growth ; volume 328, issue 1, page 5-12 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2011.06.027
https://api.elsevier.com/content/article/PII:S0022024811005379?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024811005379?httpAccept=text/plain