المؤلفون: Urquiza Toledo, María Laura

Thesis Advisors: Cartoixà Soler, Xavier

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Contactes metall/semiconductor, Contactos metal/semiconductor, Metal/semiconductor contacts, Rram, Materials 2d, Materiales 2d, 2d materials, Ciències Experimentals

Time: 621.3

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/671971

المؤلفون: Blasco Solans, Juli

المساهمون: University/Department: Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica

Thesis Advisors: Miranda, Enrique Alberto

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Commutació resistiva, Conmutación resistiva, Resistive switching, Modelització, Modelización, Modeling, RRAM, Tecnologies

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/406087

المؤلفون: Wu, Qian

المساهمون: University/Department: Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica

Thesis Advisors: Porti i Pujal, Marc

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Fiabilitat de MOSFETs, Fiabilidad de MOSFETs, MOSFETs reliability, RRAM, Microscopia de foces atòmiques, Micrscopía de fuerzas atómicas, Atomic force microscopy, Tecnologies

Time: 621.3

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/402233

المؤلفون: Markus Fritscher, Simranjeet Singh, Tommaso Rizzi, Andrea Baroni, Daniel Reiser, Maen Mallah, David Hartmann, Ankit Bende, Tim Kempen, Max Uhlmann, Gerhard Kahmen, Dietmar Fey, Vikas Rana, Stephan Menzel, Marc Reichenbach, Milos Krstic, Farhad Merchant, Christian Wenger

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)

مصطلحات موضوعية: RRAM, Modelling, GPU, Digital twin, ANN, FAT, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/df2fc9a9eb5e48bcb30cb7c5d434016e

المؤلفون: Jennifer Hasler, Arindam Basu

المصدر: Neuromorphic Computing and Engineering, Vol 5, Iss 1, p 012001 (2025)

مصطلحات موضوعية: floating-gate devices, circuits and systems, memristors, RRAM, Electronic computers. Computer science, QA75.5-76.95

Relation: https://doi.org/10.1088/2634-4386/ad9b4a; https://doaj.org/toc/2634-4386; https://doaj.org/article/419343ee21184255a5425d9d0b77c226

الاتاحة: https://doi.org/10.1088/2634-4386/ad9b4a
https://doaj.org/article/419343ee21184255a5425d9d0b77c226

المؤلفون: Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis

المصدر: Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)

مصطلحات موضوعية: brain‐machine interface, HfOx, metal‐oxide RRAM, MIS, multi‐unit activity envelope, TiOx, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/9ac8941e73ef42818704b13ca2afa361

المؤلفون: Disha Yadav, Amit Krishna Dwivedi, Shammi Verma, Devesh Kumar Avasthi

المصدر: Journal of Science: Advanced Materials and Devices, Vol 9, Iss 4, Pp 100813- (2024)

مصطلحات موضوعية: RRAM, Resistive switching, Metal oxide, Memory device, Oxygen vacancies, Ion irradiation, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2468217924001448; https://doaj.org/toc/2468-2179

URL الوصول: https://doaj.org/article/904430b946ba48448e012652aadf3e72

المؤلفون: So-Yeon Kwon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, Ga-Won Lee

المصدر: Electronic Materials, Vol 5, Iss 2, Pp 71-79 (2024)

مصطلحات موضوعية: switching characteristics, ZnO/HfO2 bilayer, stability, resistive random-access memory (RRAM), Instruments and machines, QA71-90

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-3978/5/2/6; https://doaj.org/toc/2673-3978

URL الوصول: https://doaj.org/article/7f1d2e2702db47329b8c91f4fd01f394

المؤلفون: Furqan Zahoor, Ramzi A. Jaber, Usman Bature Isyaku, Trapti Sharma, Faisal Bashir, Haider Abbas, Ali S. Alzahrani, Shagun Gupta, Mehwish Hanif

المصدر: Results in Engineering, Vol 23, Iss , Pp 102761- (2024)

مصطلحات موضوعية: CNTs, Resistive random access memory (RRAM), Ternary logic systems, Neural networks, TCAM, Technology

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590123024010168; https://doaj.org/toc/2590-1230

URL الوصول: https://doaj.org/article/f4b595bd6d154ccca823827e283dffc1

المؤلفون: Mirembe Musisi‐Nkambwe, Sahra Afshari, Jing Xie, Hailey Warner, Ivan Sanchez Esqueda

المصدر: Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2D RRAM, 2D semiconductors, h‐BN, memristors, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/7e2e50c127ed4090b11683a074f97a9e

المؤلفون: Ashwani Kumar, Sai Sukruth Bezugam

المصدر: Memories - Materials, Devices, Circuits and Systems, Vol 8, Iss , Pp 100115- (2024)

مصطلحات موضوعية: RRAM, Processing-in-memory (PIM), Hybrid (CMOS-RRAM) integration, Contrast enhancement, Image classification, Object recognition, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2773064624000185; https://doaj.org/toc/2773-0646

URL الوصول: https://doaj.org/article/b3dc703a040f4e3daf9bb4c14f84298c

المؤلفون: Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King

المصدر: Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)

مصطلحات موضوعية: RRAM, MLC, NVM, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/7862707f522f4c4cb79ddbffba4f7f6d

المؤلفون: Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang, Litao Sun

المصدر: Micromachines, Vol 15, Iss 12, p 1499 (2024)

مصطلحات موضوعية: aluminum nitride (AlN), sputtering, aluminum oxide (Al2O3), memristor, resistive random access memory (RRAM), conductive filaments (CFs), Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/12/1499; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/a905e3eceefd4fe8a94a65e3209ca272

المؤلفون: Quan Yang, Yu Kang, Cheng Zhang, Haohan Chen, Tianjiao Zhang, Zheng Bian, Xiangwei Su, Wei Xu, Jiabao Sun, Pan Wang, Yang Xu, Bin Yu, Yuda Zhao

المصدر: Advanced Science, Vol 11, Iss 29, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2D materials, cryptography, in‐sensor computing, optoelectronic RRAM, plasmonic, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/2c07382c385a4f59a538b56e3c1193fd

المؤلفون: Kimy S. Jaimes, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan

المصدر: Results in Physics, Vol 63, Iss , Pp 107890- (2024)

مصطلحات موضوعية: Nanotubes, Memristors, Ferromagnetic-like behavior, M-RRAM, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379724005758; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/ae9ee13662fc43e9a7fe7c44d4cb0dbf

المؤلفون: Yu‐Rim Jeon, Donguk Seo, Yoonmyung Lee, Deji Akinwande, Changhwan Choi

المصدر: Advanced Science, Vol 11, Iss 31, Pp n/a-n/a (2024)

مصطلحات موضوعية: 3D neuromorphic system, CMOS integration, convolutional neural network, high k metal oxide, RRAM, synaptic device, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/c3ab9883bff0457194e5bafd812913df

المؤلفون: Fan Yang, Zhaorui Liu, Xumin Ding, Yang Li, Cong Wang, Guozhen Shen

المصدر: Chip, Vol 3, Iss 2, Pp 100086- (2024)

مصطلحات موضوعية: Carbon nanomaterials, Memristor, Resistive random access memory (RRAM), Neuromorphic device, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2709472324000042; https://doaj.org/toc/2709-4723

URL الوصول: https://doaj.org/article/cc46399afcaf4c019b7908173c8502ef

المؤلفون: Giacomo Pedretti, John Moon, Pedro Bruel, Sergey Serebryakov, Ron M. Roth, Luca Buonanno, Archit Gajjar, Lei Zhao, Tobias Ziegler, Cong Xu, Martin Foltin, Paolo Faraboschi, Jim Ignowski, Catherine E. Graves

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 116-124 (2024)

مصطلحات موضوعية: Content addressable memories (CAMs), decision trees, in-memory computing, RRAM, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10753423/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/a602a5141d5341bda6924b89239da5ec

المؤلفون: Jin-Woo Kim, Jun-Seok Beom, Hong-Sub Lee, Nam-Seog Kim

المصدر: IEEE Access, Vol 12, Pp 5081-5091 (2024)

مصطلحات موضوعية: Compact model, crossbar array, interface-type RRAM, multiply and accumulate (MAC), nano-battery effect, parasitic capacitance, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10379796/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/b491aca880394b65be0b7a9e60c48a1e

المؤلفون: Sumit Diware, Koteswararao Chilakala, Rajiv V. Joshi, Said Hamdioui, Rajendra Bishnoi

المصدر: IEEE Access, Vol 12, Pp 47469-47482 (2024)

مصطلحات موضوعية: Diabetic retinopathy, neural networks, computation-in-memory, resistive random access memory, RRAM, memristor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10485620/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5bf9028c8237420ea73a3f9332eff4e1