المؤلفون: Thissen, N.F.W., Vervuurt, R.H.J., Mackus, A.J.M., Mulders, J.J.L., Weber, J.-W., Kessels, W.M.M., Bol, A.A.

المصدر: Thissen , N F W , Vervuurt , R H J , Mackus , A J M , Mulders , J J L , Weber , J-W , Kessels , W M M & Bol , A A 2017 , ' Graphene devices with bottom-up contacts by area-selective atomic layer deposition ' , 2D Materials , vol. 4 , no. 2 , 025046 . https://doi.org/10.1088/2053-1583/aa636a

مصطلحات موضوعية: Atomic layer deposition, Contact induced doping, Contact resistance, Coupling strength, Field-effect transistor, Graphene, Resist residue

وصف الملف: application/pdf

الاتاحة: https://research.tue.nl/en/publications/4237119b-394f-4562-8e40-8a34099a72c0
https://doi.org/10.1088/2053-1583/aa636a
https://pure.tue.nl/ws/files/62764290/Manuscript_NickThissen_Revised_R2.pdf
https://pure.tue.nl/ws/files/58254608/Thissen_2017_2D_Mater._4_025046.pdf
http://www.scopus.com/inward/record.url?scp=85020884673&partnerID=8YFLogxK

المؤلفون: Hiraku Chakihara, Kentaro Saito, Masao Inoue, Masazumi Matsuura, Seiji Muranaka, Shuji Matsuo, Takuya Hagiwara, Yuki Ota

المصدر: Journal of Photopolymer Science and Technology. 2015, 28(1):17