المؤلفون: Renz, Arne Benjamin

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering, TP Chemical technology

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.856338

المؤلفون: Wratten, Ailish, Pain, Sophie L., Walker, David Johannes, Renz, Arne Benjamin, Khorani, Edris, Niewelt, Tim, Grant, Nicholas Ewen, Murphy, John D.

المصدر: IEEE journal of photovoltaics. - 13, 1 (2023) , 40-47, ISSN: 2156-3403

وصف الملف: pdf

Relation: https://freidok.uni-freiburg.de/data/234114

الاتاحة: https://freidok.uni-freiburg.de/data/234114
https://nbn-resolving.org/urn:nbn:de:bsz:25-freidok-2341141
https://doi.org/10.1109/jphotov.2022.3227624
https://freidok.uni-freiburg.de/dnb/download/234114

المؤلفون: Yang, Ming-Min, Zhu, Tian-Yuan, Renz, Arne Benjamin, Sun, He-Meng, Liu, Shi, Gammon, Peter Michael, Alexe, Marin

المساهمون: RCUK | Engineering and Physical Sciences Research Council

المصدر: Nature Materials ; volume 23, issue 1, page 95-100 ; ISSN 1476-1122 1476-4660

الاتاحة: http://dx.doi.org/10.1038/s41563-023-01736-5
https://www.nature.com/articles/s41563-023-01736-5.pdf
https://www.nature.com/articles/s41563-023-01736-5

المؤلفون: Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos, Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea, Antoniou, Marina

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/184601/7/WRAP-design-optimization-3.3-kV-silicon-carbide-semi-superjunction-schottky-power-devices-2024.pdf; Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos , Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina (2024) Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices. In: The 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 02 - 06 Jun 2024 (In Press)

الاتاحة: https://wrap.warwick.ac.uk/184601/
https://wrap.warwick.ac.uk/184601/7/WRAP-design-optimization-3.3-kV-silicon-carbide-semi-superjunction-schottky-power-devices-2024.pdf

المؤلفون: Cao, Qinze, Zhang, Luyang, Gammon, Peter Michael, Baker, Guy, Lophitis, Neo, Renz, Arne Benjamin, Antoniou, Marina

مصطلحات موضوعية: Silicon carbide, thyristor, IGCT, optimization, simulation

Relation: https://nottingham-repository.worktribe.com/output/13177238

الاتاحة: https://doi.org/10.1109/WiPDAEurope55971.2022.9936508
https://nottingham-repository.worktribe.com/file/13177238/1/37
https://nottingham-repository.worktribe.com/output/13177238

المؤلفون: Renz, Arne Benjamin, Shah, Vishal Ajit, Vavasour, Oliver James, Baker, Guy William Clarke, Bonyadi, Yegi, Sharma, Yogesh, Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Phil, Antoniou, Marina, Gammon, Peter Michael

المساهمون: Engineering and Physical Science Research Council, Innovate U.K. funded TRASiCA

المصدر: IEEE Transactions on Electron Devices ; volume 69, issue 1, page 298-303 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2021.3129705
http://xplorestaging.ieee.org/ielx7/16/9664642/09632697.pdf?arnumber=9632697

المؤلفون: Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter Michael, Lophitis, Neophytos, Maresca, Luca, Irace, Andrea, Nistor, Iulian, Rahimo, Munaf, Antoniou, Marina

المساهمون: Royal Society through AdvanSiC Project, European Union’s Horizon Europe Program through AdvanSiC Project

المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 9, page 5573-5580 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2024.3435181
http://xplorestaging.ieee.org/ielx8/16/10645717/10623598.pdf?arnumber=10623598

المؤلفون: Li, Fan, Renz, Arne Benjamin, Perez-Tomas, Amador, Shah, Vishal, Gammon, Peter, La Via, Francesco, Jennings, Mike, Mawby, Philip

مصطلحات موضوعية: Built-in potential, Fabrication and characterizations, Forward voltage drops, High defect densities, Junction termination, Lateral structures, Processing temperature, Specific contact resistances

وصف الملف: application/pdf

Relation: European Commission 720827; Applied physics letters; Vol. 118, issue 24 (June 2021), art. 242101; https://ddd.uab.cat/record/274138; urn:10.1063/5.0054433; urn:oai:ddd.uab.cat:274138; urn:scopus_id:85108010085; urn:articleid:10773118v118n24p242101; urn:icn2uab:6519370

الاتاحة: https://ddd.uab.cat/record/274138

المؤلفون: Colston, Gerard, Renz, Arne Benjamin, Perera, Kushani, Gammon, Peter Michael, Antoniou, Marina, Mawby, Philip Andrew, Shah, Vishal Ajit

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 362 Issue: 1 p77-81, 5p

المؤلفون: Kotagama, Virendra, Renz, Arne Benjamin, Kilchytska, Valeria, Flandre, Denis, Qi, Yunyi, Shah, Vishal Ajit, Antoniou, Marina, Gammon, Peter Michael

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 362 Issue: 1 p83-88, 6p

المؤلفون: Qi, Yunyi, Renz, Arne Benjamin, Kotagama, Virendra, Antoniou, Marina, Gammon, Peter Michael

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p99-104, 6p

المؤلفون: Cao, Qinze, Gammon, Peter Michael, Renz, Arne Benjamin, Antoniou, Marina, Mawby, Philip Andrew, Lophitis, Neophytos

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 360 Issue: 1 p177-182, 6p

المؤلفون: Melnyk, Kyrylo, Zhang, Lu Yang, Gammon, Peter Michael, Renz, Arne Benjamin, Antoniou, Marina

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 358 Issue: 1 p97-102, 6p

المؤلفون: Melnyk, Kyrylo, Gammon, Peter M., Renz, Arne Benjamin, Cao, Quize, Lophitis, Neophytos, Antoniou, Marina

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/id/eprint/187065/1/WRAP-robust-area-efficient-4H-SiC-1.2-3.3-kV-Floating-Field-Ring-%28FFR%29-Trench-FFR-termination-designs-analysis.pdf; Melnyk, Kyrylo, Gammon, Peter M., Renz, Arne Benjamin, Cao, Quize, Lophitis, Neophytos and Antoniou, Marina (2023) Robust and area efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR termination designs and analysis. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct 2023 - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 5342-5349. ISBN 9798350316445. doi:10.1109/ECCE53617.2023.10362098 ISSN 2329-3748. (In Press)

الاتاحة: https://wrap.warwick.ac.uk/id/eprint/187065/
https://wrap.warwick.ac.uk/id/eprint/187065/1/WRAP-robust-area-efficient-4H-SiC-1.2-3.3-kV-Floating-Field-Ring-%28FFR%29-Trench-FFR-termination-designs-analysis.pdf
https://doi.org/10.1109/ECCE53617.2023.10362098

المؤلفون: Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J., Gammon, P. M.

Relation: Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M. (2023) The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) doi:10.1109/ecce53617.2023.10362455

الاتاحة: https://wrap.warwick.ac.uk/182368/
https://doi.org/10.1109/ecce53617.2023.10362455

المؤلفون: Qi, Yunyi, Antoniou, Marina, Clarke Baker, Guy William, Renz, Arne Benjamin, Zhang, Luyang, Gammon, Peter Michael

المصدر: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

الاتاحة: http://dx.doi.org/10.1109/wipdaeurope55971.2022.9936145
http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936145.pdf?arnumber=9936145

المؤلفون: Renz, Arne Benjamin, Vavasour, Oliver James, Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W.C., Mawby, Phil, Gammon, Peter

مصطلحات موضوعية: 4H-SiC, TK, P O surface passivation 2 5, Schottky barrier diodes, 3.3 kV JBS diodes, QC

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5bad371ed10260abeddfb72fe7d4b034
http://wrap.warwick.ac.uk/166204/1/WRAP-engineering-Schottky-interface-3.3-kV-SiC-JBS-diodes-using-P2O5-surface-passivation-treatment-2022.pdf

المؤلفون: Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal, Gott, James A.

Relation: Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

الاتاحة: https://wrap.warwick.ac.uk/167455/
https://doi.org/10.1149/10802.0043ecst

المؤلفون: Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel, Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A., Gammon, Peter M.

مصطلحات موضوعية: TA Engineering (General). Civil engineering (General), TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/163701/1/WRAP-3.3%20kV-SiC-JBS-diodes-employing-P2O5-surface-passivation-treatment-improve-electrical-characteristics-Gammon-2021.pdf; Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel , Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A. and Gammon, Peter M. (2021) 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics. In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021 pp. 5283-5288. doi:10.1109/ECCE47101.2021.9594999 ISSN 2329-3721.

الاتاحة: https://wrap.warwick.ac.uk/163701/
https://wrap.warwick.ac.uk/163701/1/WRAP-3.3%20kV-SiC-JBS-diodes-employing-P2O5-surface-passivation-treatment-improve-electrical-characteristics-Gammon-2021.pdf
https://doi.org/10.1109/ECCE47101.2021.9594999

المؤلفون: Qi, Yunyi, Gammon, Peter Michael, Renz, Arne Benjamin, Kotagama, Viren, Baker, Guy William Clarke, Antoniou, Marina

الاتاحة: http://dx.doi.org/10.2139/ssrn.4733583