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1Academic Journal
المؤلفون: Krishnan S. Rengarajan, Saroj Mondal, Ravindra Kapre
المصدر: IET Circuits, Devices and Systems, Vol 15, Iss 6, Pp 581-593 (2021)
مصطلحات موضوعية: clocks, CMOS logic circuits, logic design, low‐power electronics, system‐on‐chip, Computer engineering. Computer hardware, TK7885-7895
وصف الملف: electronic resource
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2
المؤلفون: Krishnaswamy Ramkumar, Long Hinh, Ravindra Kapre, Samanta Santanu Kumar, Swatilekha Saha, Vineet Agrawal, Venkatraman Prabhakar
المصدر: 2020 IEEE International Memory Workshop (IMW).
مصطلحات موضوعية: 010302 applied physics, Artificial neural network, Computer science, Process (computing), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Non-volatile memory, Noise, Neuromorphic engineering, In-Memory Processing, 0103 physical sciences, Electronic engineering, Enhanced Data Rates for GSM Evolution, 0210 nano-technology, Efficient energy use
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3
المؤلفون: Swatilekha Saha, Venkatraman Prabhakar, Krishnaswamy Ramkumar, Ravindra Kapre, Vineet Agrawal, Srikanta Samanta, Long T Hinh
المصدر: IRPS
مصطلحات موضوعية: 010302 applied physics, business.industry, Computer science, Process (computing), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Non-volatile memory, Reliability (semiconductor), Neuromorphic engineering, 0103 physical sciences, Key (cryptography), Noise (video), Analog memory, 0210 nano-technology, business, Computer hardware
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4
المؤلفون: S. Lakshminarayanan, Linda Cui, Ravindra Kapre, Srikanth Govindaswamy
المصدر: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
مصطلحات موضوعية: Interconnection, Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, High voltage, Dielectric, Chip, law.invention, chemistry, law, Logic gate, Electronic engineering, Optoelectronics, business, Leakage (electronics)
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5
المؤلفون: K.N. ManjulaRani, N. Lakshminarayanan, Nayan Patel, Samanta Santanu Kumar, Geetha Narasimhan, Helmut Puchner, Ravindra Kapre, Ram Mohan Mooraka
المصدر: 2009 IEEE International Integrated Reliability Workshop Final Report.
مصطلحات موضوعية: Engineering, business.industry, Transistor, Analytical equations, law.invention, Substrate (building), law, MOSFET, Electronic engineering, Degradation (geology), business, Reliability model, NMOS logic, Communication channel
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6
المؤلفون: C-L. Hou, G. Narasimhan, C-W. Fan, M. Whately, M-C. Hsieh, S.W. Lu, K-L. Yeh, W-J. Liao, P-G. Ma, S. Lakshminarayanan, J. Tung, S-C. Lin, J. Joung, F-C. Liu, W-C. Tseng, M. Slanina, Ravindra Kapre
المصدر: ISQED
مصطلحات موضوعية: Engineering, business.industry, Transistor, Electrical engineering, Biasing, Hardware_PERFORMANCEANDRELIABILITY, Process corners, law.invention, Threshold voltage, law, Electronic engineering, Static random-access memory, business, Standby power, NMOS logic, Leakage (electronics)
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7
المؤلفون: M.V.R. Reddy, Helmut Puchner, D. Sajoto, T. Nigam, J. Tandigan, M. Whately, K. Shakeri, Ravindra Kapre, S. Lakshminarayanan, K. Jang
المصدر: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Computer science, Memory architecture, Sram cell, Electronic engineering, Hardware_PERFORMANCEANDRELIABILITY, Static random-access memory, Write margin, Scaling, Leakage (electronics), Voltage, Threshold voltage
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8
المؤلفون: Scott E. Thompson, Igor Polishchuk, Sagy Levy, Krishnaswamy Ramkumar, Nirav Shah, Ravindra Kapre, Oliver Pohland
المصدر: 2006 64th Device Research Conference.
مصطلحات موضوعية: Stress (mechanics), Contact process, Materials science, CMOS, business.industry, Contact resistance, Electrical engineering, Optoelectronics, Strained silicon, Static random-access memory, business, NMOS logic, PMOS logic
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9
المؤلفون: S. Wong, D. Radaelli, J. Majjiga, Ravindra Kapre, Helmut Puchner, S. Sharifzadeh, R. Chao
المصدر: 2006 IEEE International Reliability Physics Symposium Proceedings.
مصطلحات موضوعية: Engineering, Soft error, Nuclear testing, CMOS, business.industry, Electronic engineering, Process (computing), Single event latchup, Static random-access memory, business, Datasheet
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10
المؤلفون: Sundar Narayanan, G. Narasimhan, Krishnaswamy Ramkumar, Alain Blosse, R. Gettle, Ravindra Kapre, Shahin Sharifzadeh, C.T. Hsu, Prabhuram Gopalan
المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
مصطلحات موضوعية: Materials science, CMOS, Gate oxide, business.industry, Shallow trench isolation, Gate dielectric, Parasitic element, Electrical engineering, Optoelectronics, Equivalent oxide thickness, Nitride, business, Leakage (electronics)