المؤلفون: Zeyang Xiang, Kexiang Wang, Jie Lu, Zixuan Wang, Huilin Jin, Ranping Li, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ran Jiang

المصدر: Applied Sciences, Vol 14, Iss 6, p 2588 (2024)

مصطلحات موضوعية: homogeneous oxide stacking, multilevel-cell (MLC) NAND memory, hafnium-zirconium oxide (HfZrO), charge trap memory (CTM), Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2076-3417/14/6/2588; https://doaj.org/toc/2076-3417

URL الوصول: https://doaj.org/article/58524cfb35514c449f7ebcd073678929

المؤلفون: Jie Lu, Zeyang Xiang, Kexiang Wang, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang

المصدر: Inorganics, Vol 12, Iss 2, p 60 (2024)

مصطلحات موضوعية: plasticity, hafnium dioxide, channel, interlay, Inorganic chemistry, QD146-197

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2304-6740/12/2/60; https://doaj.org/toc/2304-6740

URL الوصول: https://doaj.org/article/984d054b55874b12a11979fbcea8833c