المؤلفون: Rodriguez, Rosana, Martin Martinez, Javier, Salvador, Emili, Crespo Yepes, Albert, Miranda, Enrique Alberto, Nafria, Montserrat, Rubio Sola, Jose Antonio, Ntinas, Vasileios, Sirakoulis, Georgios Ch.

المساهمون: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica

مصطلحات موضوعية: Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats, Integrated circuits, Memristors, Resistive switching, RRAM devices, Stochastic resonance, Additive noise, Circuit resonance, Current voltage characteristics, Gaussian noise (electronic), RRAM, Stochastic systems, Bias circuitry, Gaussians, Memristor, Performance, Resistance ratio, Resonance effect, RRAM device, Standard deviation, Stochastic resonances, Magnetic resonance, Circuits integrats

وصف الملف: 5 p.; application/pdf

Relation: https://ieeexplore.ieee.org/document/9937850; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-103869RB-C33/ES/THE VARIABILITY CHALLENGE IN NANO-CMOS AND BEYOND-CMOS: NOVEL IC DESIGN PARADIGMS FOR MITIGATION AND EXPLOITATION (VIGILANT-UPC)/; Rodriguez, R. [et al.]. Beneficial role of noise in Hf-based memristors. A: IEEE International Symposium on Circuits and Systems. "2022 IEEE International Symposium on Circuits and Systems (ISCAS): Austin, TX, USA: May 28-June 1, 2022: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2022, p. 975-979. ISBN 978-1-6654-8485-5. DOI 10.1109/ISCAS48785.2022.9937850.; http://hdl.handle.net/2117/381561

الاتاحة: http://hdl.handle.net/2117/381561
https://doi.org/10.1109/ISCAS48785.2022.9937850

المؤلفون: Jongwon Oh (8298666), Seok Min Yoon (1576342)

مصطلحات موضوعية: Biophysics, Medicine, Molecular Biology, Pharmacology, Biotechnology, Ecology, Science Policy, Space Science, insulating layer sandwiched, future perspectives related, fast switching speeds, excellent scalability owing, enhanced storage density, covalent organic frameworks, active insulating layer, rram devices comprises, two metal electrodes, based rram devices, rram devices, based rram, two terminals, reticular materials, reticular material, recent progress, overall design, operational mechanisms, new challenges, metal ), digital memristor, achieves high

Relation: https://figshare.com/articles/journal_contribution/Resistive_Memory_Devices_Based_on_Reticular_Materials_for_Electrical_Information_Storage/17092130

الاتاحة: https://doi.org/10.1021/acsami.1c16332.s001

المؤلفون: Nan Liu (1630), Yi Cao (229829), Yin-Lian Zhu (4057798), Yu-Jia Wang (817079), Yun-Long Tang (4057789), Bo Wu (16141), Min-Jie Zou (6256016), Yan-Peng Feng (6256019), Xiu-Liang Ma (2850230)

مصطلحات موضوعية: Biophysics, Medicine, Genetics, Biotechnology, Ecology, Immunology, Cancer, Hematology, Plant Biology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, stability, Bi 0.4, Bi 0.2, electron energy loss spectroscopy f., RRAM medium, Perovskite Oxides Common pursuits, RRAM devices, electroforming-free character, nanometric logic, self-assembled uniform biphasic system, Spinodal Decomposition-Driven Endur., Bi 0.24, research studies, FeO, spinodal decomposition-driven phase., neuromorphic applications, oxygen vacancies, carrier channels

Relation: https://figshare.com/articles/journal_contribution/Spinodal_Decomposition-Driven_Endurable_Resistive_Switching_in_Perovskite_Oxides/14823192

الاتاحة: https://doi.org/10.1021/acsami.1c06649.s001

المؤلفون: Covi E., Wang W., Lin Y., Farronato M., Ambrosi E., Ielmini D.

المساهمون: Covi, E., Wang, W., Lin, Y., Farronato, M., Ambrosi, E., Ielmini, D.

مصطلحات موضوعية: Electrical characterization, Electrodes, Neuromorphics, oxide-based resistive switching random access memory (RRAM), Resistive RAM, Switches, Switching circuits, Threshold voltage, Transistors, volatile RRAM devices

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000686761500028; volume:68; issue:9; firstpage:4335; lastpage:4341; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; info:eu-repo/grantAgreement/EC/H2020/824164; http://hdl.handle.net/11311/1182416; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85112630019

الاتاحة: http://hdl.handle.net/11311/1182416
https://doi.org/10.1109/TED.2021.3076029

المؤلفون: D. J. J. Loy, P. A. Dananjaya, X. L. Hong, D. P. Shum, W. S. Lew

المصدر: Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)

مصطلحات موضوعية: Conduction Mechanism, Schottky Emission (SE), High Resistance State (HRS), Resistive Random Access Memory (RRAM), RRAM Devices, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645

المؤلفون: Kukli, Kaupo, Kemell, Marianna, Castan, Helena, Duenas, Salvador, Seemen, Helina, Rähn, Mihkel, Link, Joosep, Stern, Raivo, Heikkilä, Mikko J., Ritala, Mikko, Leskelä, Markku

المساهمون: Department of Chemistry, Mikko Ritala / Principal Investigator, HelsinkiALD

مصطلحات موضوعية: ROOM-TEMPERATURE FERROMAGNETISM, ZRO2 NANOSTRUCTURES, RRAM DEVICES, ENCAPSULATION, CAPACITORS, EPITAXY, ALUMINA, GROWTH, Nano-technology, Chemical sciences

وصف الملف: application/pdf

Relation: The study was partially supported by the Finnish Centre of Excellence in Atomic Layer Deposition (284623), European Regional Development Fund project "Emerging orders in quantum and nanomaterials" (TK134), Spanish Ministry of Economy and Competitiveness (TEC2014-52152-C3-3-R) with support of Feder funds, Estonian Academy of Sciences (SLTFYPROF), and Estonian Research Agency (IUT2-24, IUT23-7).; Kukli , K , Kemell , M , Castan , H , Duenas , S , Seemen , H , Rähn , M , Link , J , Stern , R , Heikkilä , M J , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 5 , pp. P287-P294 . https://doi.org/10.1149/2.0021806jss; ORCID: /0000-0002-3583-2064/work/47802802; ORCID: /0000-0002-6210-2980/work/48608031; ORCID: /0000-0002-6027-2089/work/47804379; ORCID: /0000-0001-5830-2800/work/47802635; http://hdl.handle.net/10138/311241; 40b46fe0-bdc2-4c69-9c2d-3d1ea42d58a6; 000440834200019

الاتاحة: http://hdl.handle.net/10138/311241

المؤلفون: Xiaojuan Lian, Xinyi Shen, Jinke Fu, Zhixuan Gao, Xiang Wan, Xiaoyan Liu, Ertao Hu, Jianguang Xu, Yi Tong

المصدر: Electronics; Volume 9; Issue 12; Pages: 2098

مصطلحات موضوعية: RRAM devices, 2D MXene, resistance switching, volatile, nonvolatile, synaptic plasticity

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics9122098

الاتاحة: https://doi.org/10.3390/electronics9122098

المؤلفون: Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib

المصدر: The Journal of Engineering (2019)

مصطلحات موضوعية: resistive RAM, electrical resistivity, electrical conductivity transitions, integrated circuit modelling, oxidation, reduction (chemical), physics-based RRAM models, compact models, oxide-based RRAM devices, electrical parameters, thermal parameters, drift diffusion, redox, electric field, conductive filament, current conduction mechanisms, resistive switching, filament radius, generalised hopping mechanisms, Schottky hopping mechanisms, conductive filament geometry, 3D models, 2D models, resistive switching behaviour, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234; https://doaj.org/toc/2051-3305

URL الوصول: https://doaj.org/article/848f6f444b8e48c68d40e03e91806881

المؤلفون: Rubio Sola, Jose Antonio, Escudero, Manuel, Pouyan, Peyman

المساهمون: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

مصطلحات موضوعية: Àrees temàtiques de la UPC::Informàtica::Sistemes d'informació::Emmagatzematge i recuperació de la informació, Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats, Computer storage devices, Integrated circuits, RRAM devices, Ternary memories, Variability, Endurance, Aging, Adaptive mechanism, Ordinadors -- Dispositius de memòria, Circuits integrats

وصف الملف: 3 p.

Relation: http://ieeexplore.ieee.org/document/8046238/; info:eu-repo/grantAgreement/MINECO/Aproximación multinivel al diseño orientado a la fiabilidad de circuitos integrados analógicos y digitales/TEC2013-45638-C3-2-R; Rubio, A., Escudero, M., Pouyan, P. Reliability issues in RRAM ternary memories affected by variability and aging mechanisms. A: IEEE International Symposium on On-Line Testing and Robust System Design. "2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS 2017): Thessaloniki, Greece: 3-5 July 2017". Thessaloniki: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 90-92.; http://hdl.handle.net/2117/110921; https://doi.org/10.1109/IOLTS.2017.8046238

الاتاحة: http://hdl.handle.net/2117/110921
https://doi.org/10.1109/IOLTS.2017.8046238

المؤلفون: Matteo Farronato, Daniele Ielmini, Yu-Hsuan Lin, Elia Ambrosi, Erika Covi, Wei Wang

المصدر: IEEE Transactions on Electron Devices. 68:4335-4341

مصطلحات موضوعية: Threshold voltage, Materials science, volatile RRAM devices, Transistors, Electrical characterization, 01 natural sciences, law.invention, Switching time, Resistive RAM, law, 0103 physical sciences, Electrical and Electronic Engineering, Electrodes, Neuromorphics, 010302 applied physics, business.industry, Transistor, Switching circuits, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Characterization (materials science), oxide-based resistive switching random access memory (RRAM), Neuromorphic engineering, Scalability, Optoelectronics, business, Switches, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68302d03ae6728752a64e824e7141e53
https://doi.org/10.1109/ted.2021.3076029

المؤلفون: Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, García García, Héctor, Miranda, E., González, M.B., Campabadal, F.

مصطلحات موضوعية: RRAM devices, Admittance cycles, Hafnium oxide, Atomic layer deposition

وصف الملف: application/pdf

Relation: https://www.sciencedirect.com/science/article/pii/S0167931717301545?via%3Dihub; https://doi.org/10.1016/j.mee.2017.04.020.; Microelectronic Engineering, 2017, Vol. 178, p. 30-33; https://uvadoc.uva.es/handle/10324/65968; 30; 33; Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices; 178

الاتاحة: https://uvadoc.uva.es/handle/10324/65968
https://doi.org/10.1016/j.mee.2017.04.020

المؤلفون: Rodríguez Martínez, Rosana, Martin Martinez, Javier, Salvador Aguilera, Emili, Crespo Yepes, Albert, Miranda, Enrique, Nafría i Maqueda, Montserrat, Rubio, Antonio, Ntinas, Vasileios, Sirakoulis, Georgios Ch

مصطلحات موضوعية: Memristors, Resistive switching, RRAM devices, Stochastic resonance

Relation: Ministerio de Ciencia e Innovación PID2019-103869RB-C3; Agencia Estatal de Investigación TEC2017-90969-EXP; 2022 IEEE International Symposium on Circuits and Systems (ISCAS); 2022, p. 975-979; https://ddd.uab.cat/record/291871; urn:10.1109/ISCAS48785.2022.9937850; urn:oai:ddd.uab.cat:291871; urn:pure_id:383576000; urn:scopus_id:85142524583

الاتاحة: https://ddd.uab.cat/record/291871

المؤلفون: Molina,J., Valderrama,R., Calleja,W., Rosales,P., Zúñiga,C., Gutiérrez,E., Hidalga,J., Torres,A.

المصدر: Superficies y vacío v.27 n.1 2014

مصطلحات موضوعية: Memristance Effect, MIM structures, Atomic-Layer Deposition, Al2O3, BEOL Processing, Conduction Mechanisms, RRAM Devices

وصف الملف: text/html

الاتاحة: http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212014000100001

المؤلفون: Jianguang Xu, Zhixuan Gao, Xiang Wan, Yi Tong, Xiaojuan Lian, Xiaoyan Liu, Jinke Fu, Xinyi Shen, Ertao Hu

المصدر: Electronics, Vol 9, Iss 2098, p 2098 (2020)
Electronics
Volume 9
Issue 12

مصطلحات موضوعية: Materials science, Computer Networks and Communications, Electronic synapse, lcsh:TK7800-8360, Nanotechnology, 02 engineering and technology, 01 natural sciences, volatile, 0103 physical sciences, 2D MXene, Electronics, Electrical and Electronic Engineering, Electrical conductor, 010302 applied physics, Resistive touchscreen, synaptic plasticity, RRAM devices, lcsh:Electronics, 021001 nanoscience & nanotechnology, Resistive random-access memory, nonvolatile, Hardware and Architecture, Control and Systems Engineering, Power consumption, Signal Processing, 0210 nano-technology, resistance switching

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce5d53745b530fae137bd2e82af4d37f
https://www.mdpi.com/2079-9292/9/12/2098

المؤلفون: Xiao Liang Hong, Putu Andhita Dananjaya, Desmond Jia Jun Loy, Danny Pak-Chum Shum, Wen Siang Lew

المساهمون: School of Physical and Mathematical Sciences

المصدر: Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)

مصطلحات موضوعية: Conduction Mechanisms, Materials science, Annealing (metallurgy), Science, Analytical chemistry, 02 engineering and technology, 01 natural sciences, Article, Protein filament, Crystallinity, Conduction Mechanism, 0103 physical sciences, Science::Chemistry [DRNTU], High Resistance State (HRS), RRAM Devices, Resistive Random Access Memory (RRAM), 010302 applied physics, Multidisciplinary, Schottky diode, 021001 nanoscience & nanotechnology, Thermal conduction, High resistance, Transmission electron microscopy, Medicine, Schottky Emission, Resistive switching memory, 0210 nano-technology, Schottky Emission (SE)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7755ac31338862001113b10ac66285a6
https://pubmed.ncbi.nlm.nih.gov/30283024

المؤلفون: Joosep Link, Helina Seemen, Marianna Kemell, Helena Castán, Raivo Stern, Mikko Ritala, Salvador Dueñas, Mihkel Rähn, Markku Leskelä, Mikko Heikkilä, Kaupo Kukli

المساهمون: Department of Chemistry, Mikko Ritala / Principal Investigator

المصدر: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname

مصطلحات موضوعية: Materials science, Thin films, 116 Chemical sciences, 02 engineering and technology, Epitaxy, EPITAXY, 01 natural sciences, RRAM DEVICES, law.invention, Atomic layer deposition, Óxidos metálicos, CAPACITORS, law, 0103 physical sciences, ENCAPSULATION, Thin film, 010302 applied physics, business.industry, ZRO2 NANOSTRUCTURES, Láminas delgadas, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Capacitor, ROOM-TEMPERATURE FERROMAGNETISM, Deposición atómica de capas, Optoelectronics, GROWTH, Metal oxides, ALUMINA, 221 Nano-technology, 0210 nano-technology, business

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::311c41d1ce24d70e977475795e0acc86
http://hdl.handle.net/10138/311241

المؤلفون: Antonio Rubio, Manel Escudero, Peyman Pouyan

المساهمون: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

المصدر: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
IOLTS

مصطلحات موضوعية: Engineering, Aging, Cmos compatibility, Integrated circuits, 02 engineering and technology, 01 natural sciences, Endurance, 0103 physical sciences, Informàtica::Sistemes d'informació::Emmagatzematge i recuperació de la informació [Àrees temàtiques de la UPC], 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Ordinadors -- Dispositius de memòria, Variability, 010302 applied physics, Random access memory, business.industry, 020208 electrical & electronic engineering, RRAM devices, Adaptive mechanism, Enginyeria electrònica::Microelectrònica::Circuits integrats [Àrees temàtiques de la UPC], Ternary memories, Computer storage devices, Resistive random-access memory, Power consumption, Resistive switching, Scalability, Circuits integrats, business, Random access

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17ad17a8fb3904c2327de1594d3cc7ad
https://hdl.handle.net/2117/110921

المؤلفون: U. Lüders, W. Román Acevedo, Diego Rubi, Federico Golmar, Pablo Levy, F. Gomez-Marlasca, J. Lecourt, Pablo Granell

المساهمون: Comisión Nacional de Energía Atómica [ARGENTINA] (CNEA), Consejo Nacional de Investigaciones Científicas y Técnicas [Buenos Aires] (CONICET), Escuela de Ciencia y Tecnología [San Martín] (ECyT), Universidad Nacional de San Martin (UNSAM), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Instituto Nacional de Tecnología Industrial (INTI), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)

المصدر: Physics Letters A
Physics Letters A, 2016, 380 (36), pp.2870-2875. ⟨10.1016/j.physleta.2016.06.023⟩
Physics Letters A, Elsevier, 2016, 380 (36), pp.2870-2875. ⟨10.1016/j.physleta.2016.06.023⟩

مصطلحات موضوعية: Ciencias Físicas, General Physics and Astronomy, FOS: Physical sciences, 02 engineering and technology, manganites, Otras Ciencias Físicas, 01 natural sciences, Three level, Electric field, Manganites, 0103 physical sciences, [CHIM.CRIS]Chemical Sciences/Cristallography, Electrical performance, [CHIM]Chemical Sciences, Resistive switching, Device failure, 010302 applied physics, Physics, Condensed Matter - Materials Science, business.industry, resistive switching, RRAM devices, Materials Science (cond-mat.mtrl-sci), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Manganite, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, Self-healing, Electrode, Optoelectronics, 0210 nano-technology, business, CIENCIAS NATURALES Y EXACTAS

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05a80179e829c51f44cd495cba47a01f
http://arxiv.org/abs/1606.05401

المؤلفون: Acevedo, W.R., Rubi, D., Lecourt, J., Lüders, U., Gomez-Marlasca, F., Granell, P., Golmar, F., Levy, P.

المساهمون: Comisión Nacional de Energía Atómica ARGENTINA (CNEA), Consejo Nacional de Investigaciones Científicas y Técnicas Buenos Aires (CONICET), Escuela de Ciencia y Tecnología San Martín (ECyT), Universidad Nacional de San Martin (UNSAM), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Instituto Nacional de Tecnología Industrial (INTI)

المصدر: ISSN: 0375-9601.

مصطلحات موضوعية: Manganites, Resistive switching, RRAM devices, [CHIM]Chemical Sciences, [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry

Relation: hal-02184772; https://normandie-univ.hal.science/hal-02184772

الاتاحة: https://normandie-univ.hal.science/hal-02184772
https://doi.org/10.1016/j.physleta.2016.06.023

المؤلفون: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M.

المساهمون: Young, TF (reprint author), Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan., Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan., Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan., Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan., Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China., Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan., Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 802, Taiwan., Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China., Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA.

المصدر: EI

مصطلحات موضوعية: Carbon, Hydrogen redox, Conjugation double bond, RRAM, CO2 FLUID TREATMENT, RRAM DEVICES, HOPPING CONDUCTION, SILICON, TRANSITION, ORIGIN, FILMS

Relation: NANOSCALE RESEARCH LETTERS.2014,9.; 1100163; http://hdl.handle.net/20.500.11897/328038

الاتاحة: https://hdl.handle.net/20.500.11897/328038
https://doi.org/10.1186/1556-276X-9-52