المؤلفون: Wang, Xin¹ (AUTHOR), Yang, Jucai^1,2 (AUTHOR), Zhao, Erjun³ (AUTHOR) ejzhao@imut.edu.cn, Cao, Zhenzhu¹ (AUTHOR) czz03@imut.edu.cn

المصدر: Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-10. 10p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *NANOELECTROMECHANICAL systems, *DENSITY functional theory, *MICROELECTROMECHANICAL systems, *DIELECTRIC properties, *SUPERLATTICES

المؤلفون: Ma, Zhijun¹ (AUTHOR), Wang, Zhiwei¹ (AUTHOR), Zhang, Qi^2,3 (AUTHOR) peggy.zhang@csiro.au, Guo, Yizhong⁴ (AUTHOR), Zhou, Peng¹ (AUTHOR), Liang, Kun¹ (AUTHOR) liangkun@hubu.edu.cn, Zhang, Tianjin¹ (AUTHOR) zhangtj@hubu.edu.cn, Valanoor, Nagarajan² (AUTHOR)

المصدر: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-7. 7p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *PULSED laser deposition, *SUBSTRATES (Materials science), *THIN films, *MEMRISTORS

المؤلفون: Rathore, Nitesh Kumar¹ (AUTHOR) niteshrathore98@gmail.com, Singh, Pooran¹ (AUTHOR) pooran.singh@mahindrauniversity.edu.in

المصدر: Journal of Applied Physics. 10/7/2024, Vol. 136 Issue 13, p1-13. 13p.

مصطلحات موضوعية: *STATIC random access memory, *NANOTECHNOLOGY, *CELLULAR automata, *RESEARCH personnel, *DIGITAL electronics, *SEMICONDUCTORS

المؤلفون: Pan, Jinyan¹ (AUTHOR), He, Hongyang¹ (AUTHOR), Huang, Qiao¹ (AUTHOR), Gao, Yunlong² (AUTHOR), Lin, Yuxiang¹ (AUTHOR), He, Ruotong¹ (AUTHOR) ruotonghe@jmu.edu.cn, Chen, Hongyu³ (AUTHOR) chenhyu@jmu.edu.cn

المصدر: Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-12. 12p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *MAGNETRON sputtering, *ATOMIC layer deposition, *METAL fibers, *DATA warehousing, *MAGNETRONS

المؤلفون: Park, Yongjin¹ (AUTHOR), Lee, Jong-Ho² (AUTHOR) jungkyu0712@gmail.com, Lee, Jung-Kyu¹ (AUTHOR) sungjun@dongguk.edu, Kim, Sungjun¹ (AUTHOR)

المصدر: Journal of Chemical Physics. 2/21/2024, Vol. 160 Issue 7, p1-9. 9p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *FERROELECTRIC thin films, *RANDOM access memory, *PATTERN recognition systems, *PINK noise, *DIELECTRIC films

المؤلفون: Sun, J. Z.

المصدر: Journal of Applied Physics; 1/7/2025, Vol. 137 Issue 1, p1-12, 12p

مصطلحات موضوعية: RECORDS management, ACTIVATION energy, DEGREES of freedom, TEMPERATURE, PROBABILITY theory, RANDOM access memory

المؤلفون: Roy, Arpita¹ (AUTHOR), Dhibar, Subhendu² (AUTHOR) sdhibar@scholar.buruniv.ac.in, Kumar, Saurav¹ (AUTHOR), Some, Sangita² (AUTHOR), Garg, Parul³ (AUTHOR), Ruidas, Pradip⁴ (AUTHOR), Bhattacharjee, Subham⁴ (AUTHOR), Bera, Ashok³ (AUTHOR), Saha, Bidyut² (AUTHOR) bsaha@chem.buruniv.ac.in, Ray, Soumya Jyoti¹ (AUTHOR) ray@iitp.ac.in

المصدر: Scientific Reports. 12/30/2024, Vol. 14 Issue 1, p1-17. 17p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *FIELD emission electron microscopy, *RANDOM access memory, *FOURIER transform infrared spectroscopy, *FLEXIBLE electronics

المؤلفون: Chou, Sheng‐Yao¹ (AUTHOR), Chen, Po‐Hsun^2,3 (AUTHOR) c0931602@gmail.com, Chen, Ming‐Chen⁴ (AUTHOR), Chang, Ting‐Chang⁴ (AUTHOR), Wang, Yu‐Bo⁴ (AUTHOR), Tu, Hong‐Yi¹ (AUTHOR), Zhang, Yong‐Ci¹ (AUTHOR), Wu, Chung‐Wei⁴ (AUTHOR), Yeh, Yu‐Hsuan⁴ (AUTHOR), Tsai, Tsung‐Ming¹ (AUTHOR), Huang, Yu‐Ching⁵ (AUTHOR), Chen, Yi Huang¹ (AUTHOR)

المصدر: Physica Status Solidi. A: Applications & Materials Science. Dec2024, p1. 6p. 7 Illustrations.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *ZINC oxide thin films, *SUPERCRITICAL fluids, *PHOTOELECTRON spectroscopy, *MATERIALS analysis, *RANDOM access memory

المؤلفون: ERICKSON, JEFF¹ jeffe@illinois.edu, VAN DER HOOG, IVOR² i.d.vanderhoog@uu.nl, MILTZOW, TILLMANN² t.miltzow@googlemail.com

المصدر: SIAM Journal on Computing. 2024, Vol. 53 Issue 6, p102-138. 37p.

مصطلحات موضوعية: *RANDOM access memory, *COMMERCIAL art galleries, POLYNOMIAL time algorithms, COMPUTATIONAL geometry, NATURAL resources

المؤلفون: WERDEN, GREGORY J.

المصدر: Antitrust Law Journal. 2024, Vol. 86 Issue 2, p579-645. 67p.

مصطلحات موضوعية: *CONTRACTS, *PRICE maintenance, *BIDS, *UNFAIR competition, *ANTITRUST law, DYNAMIC random access memory, SOCIAL institutions

المؤلفون: Shanmugam, Arulpriya¹ (AUTHOR) arul.priya91@gmail.com, Ponnusamy, Kumar¹ (AUTHOR)

المصدر: International Journal of Electronics. Oct2024, Vol. 111 Issue 10, p1679-1699. 21p.

مصطلحات موضوعية: *INTEGRATED circuits, STATIC random access memory, FIELD-effect transistors, STRAY currents, CIRCUIT complexity

المؤلفون: Abbasian, Erfan¹ (AUTHOR) erfan.cmu@gmail.com, Birla, Shilpi² (AUTHOR), Sachdeva, Ashish³ (AUTHOR), Mani, Elangovan⁴ (AUTHOR)

المصدر: International Journal of Electronics. Oct2024, Vol. 111 Issue 10, p1724-1741. 18p.

مصطلحات موضوعية: STATIC random access memory, FIELD-effect transistors, WEARABLE technology, SMARTWATCHES, LEAKAGE

المؤلفون: Jiang, Chenjie¹ (AUTHOR), Wen, Junqi¹ (AUTHOR), Meng, Siyu¹ (AUTHOR), Fu, Kepu¹ (AUTHOR), Xia, Changquan¹ (AUTHOR), Chen, Haitao¹ (AUTHOR), Qian, Qinyu¹ (AUTHOR), Cheng, Liwen¹ (AUTHOR) lwcheng@yzu.edu.cn

المصدر: Electronics Letters (Wiley-Blackwell). Sep2024, Vol. 60 Issue 17, p1-4. 4p.

مصطلحات موضوعية: STATIC random access memory, CELL physiology, LOW voltage systems, TRANSISTORS, VOLTAGE

المؤلفون: Yeh, Yu-Hsuan¹ (AUTHOR), Tan, Yung-Fang² (AUTHOR), Huang, Yen-Che² (AUTHOR), Lin, Chao Cheng³ (AUTHOR), Wu, Chung-Wei¹ (AUTHOR), Zhang, Yong-Ci² (AUTHOR), Lee, Ya-Huan¹ (AUTHOR), Chang, Ting-Chang⁴ (AUTHOR) tcchang3708@gmail.com, Sze, Simon M.⁵ (AUTHOR)

المصدر: Journal of Applied Physics. 2/14/2024, Vol. 135 Issue 6, p1-6. 6p.

مصطلحات موضوعية: *PHASE transitions, *RANDOM access memory, *STRAY currents, *TEMPERATURE, *RELIABILITY in engineering

المؤلفون: Ko, Woon-San¹ (AUTHOR) kowoonsan@o.cnu.ac.kr, Song, Myeong-Ho^1,2 (AUTHOR), Byun, Jun-Ho¹ (AUTHOR), Lee, Do-Yeon¹ (AUTHOR), Kwon, So-Yeon¹ (AUTHOR), Hyun, Jong-Sin³ (AUTHOR), Choi, Dong-Hyeuk³ (AUTHOR), Lee, Ga-Won¹ (AUTHOR) gawon@cnu.ac.kr

المصدر: Nanotechnology. 2/10/2025, Vol. 36 Issue 6, p1-10. 10p.

مصطلحات موضوعية: *PLASMA-enhanced chemical vapor deposition, *NONVOLATILE random-access memory, *SILICON nitride, *X-ray diffraction, *THIN films

المؤلفون: Pelke, Rebecca¹ (AUTHOR) pelke@ice.rwth-aachen.de, Staudigl, Felix¹ (AUTHOR) staudigl@ice.rwth-aachen.de, Thomas, Niklas¹ (AUTHOR) thomas@ice.rwth-aachen.de, Hossein, Mohammed¹ (AUTHOR) hossein@ice.rwth-aachen.de, Bosbach, Nils¹ (AUTHOR) bosbach@ice.rwth-aachen.de, Cubero-Cascante, José¹ (AUTHOR) cubero@ice.rwth-aachen.de, Leupers, Rainer¹ (AUTHOR) leupers@ice.rwth-aachen.de, Joseph, Jan Moritz¹ (AUTHOR) joseph@ice.rwth-aachen.de

المصدر: Philosophical Transactions of the Royal Society A: Mathematical, Physical & Engineering Sciences. 1/16/2025, Vol. 383 Issue 2288, p1-15. 15p.

مصطلحات موضوعية: *NONVOLATILE random-access memory, *TECHNOLOGICAL innovations, *COMPUTING platforms, *MACHINE learning, *SYSTEM integration

المؤلفون: Dai, Guoshu¹ (AUTHOR), Lu, Haodong¹ (AUTHOR), Chen, Xiaomei¹ (AUTHOR), Rong, Zeren¹ (AUTHOR), Huang, Huiyan¹ (AUTHOR), Zhu, Guanyao¹ (AUTHOR), Liu, Zhen¹ (AUTHOR) zliu@gdut.edu.cn

المصدر: Applied Physics Letters. 1/6/2025, Vol. 126 Issue 1, p1-8. 8p.

مصطلحات موضوعية: *RANDOM access memory, *SCANNING electron microscopes, *THIN films, *SOL-gel processes, *X-ray diffraction

المؤلفون: Wu, Yunzhuo¹ (AUTHOR), Wu, Tong¹ (AUTHOR), Chen, Haoran¹ (AUTHOR), Cui, Yongwei¹ (AUTHOR), Xu, Hongyue¹ (AUTHOR), Jiang, Nan¹ (AUTHOR), Cheng, Zhen¹ (AUTHOR), Wu, Yizheng^1,2,3 (AUTHOR) wuyizheng@fudan.edu.cn

المصدر: Applied Physics Letters. 1/6/2025, Vol. 126 Issue 1, p1-6. 6p.

مصطلحات موضوعية: *RANDOM access memory, *MAGNETIC torque, *MAGNETIC devices, *CRITICAL currents, *MAGNETIZATION, *SPIN-orbit interactions

المؤلفون: Moposita, Tatiana¹ (AUTHOR) m.lanuzza@dimes.unical.it, Garzón, Esteban¹ (AUTHOR) esteban.garzon@unical.it, Teman, Adam² (AUTHOR) adam.teman@biu.ac.il, Lanuzza, Marco¹ (AUTHOR)

المصدر: Nanomaterials (2079-4991). Jan2025, Vol. 15 Issue 1, p9. 16p.

مصطلحات موضوعية: *MAGNETIC tunnelling, *RANDOM access memory, *MAGNETIC torque, *COMMERCIAL art, *SILICON

المؤلفون: Cho, Ju-Young¹ (AUTHOR) zozoo0@snu.ac.kr, Lee, So-Yeon² (AUTHOR) zozoo0@snu.ac.kr

المصدر: Materials (1996-1944). Jan2025, Vol. 18 Issue 1, p132. 11p.

مصطلحات موضوعية: *RANDOM access memory, *STRAIN energy, *ATOMIC radius, *ELECTRON microscopy, *THICKNESS measurement