يعرض 1 - 20 نتائج من 354 نتيجة بحث عن '"Quevedo-Lopez, Manuel A."', وقت الاستعلام: 0.60s تنقيح النتائج
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    المساهمون: NATO Science for Peace and Security Programme, NASA Early Stage Innovations (ESI23) program, M.B. and E.Z. acknowledge support of the EU NextGenerationEU through the Recovery and Resilience Plan for Slovakia, O.F. thanks Ulrike Nitzsche from IFW Dresden for technical assistance

    المصدر: IEEE Transactions on Applied Superconductivity ; page 1-5 ; ISSN 1051-8223 1558-2515 2378-7074

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    Academic Journal

    المساهمون: University of Texas System, Consejo Nacional de Ciencia y Tecnología, National Science Foundation, Air Force Office of Scientific Research

    المصدر: Microelectronic Engineering ; volume 279, page 112063 ; ISSN 0167-9317

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    المساهمون: Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fulbright U.S. Scholar Program

    المصدر: Nanoscale ; volume 16, issue 22, page 10833-10840 ; ISSN 2040-3364 2040-3372

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    Academic Journal

    المصدر: Applied Physics Letters. 89(24-July-2006)

    مصطلحات موضوعية: gate dielectrics, AlN, HfO2, STEM, HAADF, EELS

    وصف الملف: application/pdf

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    Academic Journal

    المساهمون: Quevedo-López, Manuel A.

    المصدر: Polymers

    وصف الملف: application/pdf

    Relation: https://dx.doi.org/10.3390/polym11020222; https://hdl.handle.net/10735.1/8930; Gabriela Contreras-Cortés, Ana, Francisco Javier Almendariz-Tapia, Agustin Gómez-Álvarez, Armando Burgos-Hernández, et al. 2019. "Toxicological Assessment of Cross-Linked Beads of Chitosan-Alginate and Aspergillus australensis Biomass, with Efficiency as Biosorbent for Copper Removal." Polymers 11(2): art. 222, doi:10.3390/polym11020222; 11

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    Book
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    المساهمون: Équipe Nano-ingénierie et intégration des oxydes métalliques et de leurs interfaces (LAAS-NEO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire de chimie de coordination (LCC), Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), University of Texas at Dallas Richardson (UT Dallas), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Région Occitanie (project MHytyque), LAAS-CNRS, European Commission and Region Occitanie for their FEDER support (THERMIE grant), European Research Council / Université Fédérale de Toulouse : PyroSafe project (grant number 832889), U.S. Department of Energy, Office of Science, Basic Energy Sciences (DE-SC0019902)

    المصدر: ISSN: 2366-7486 ; Advanced Sustainable Systems ; https://hal.science/hal-02895513 ; Advanced Sustainable Systems, 2020, 4 (9), pp.2000121. ⟨10.1002/adsu.202000121⟩.

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    المساهمون: Équipe Nano-ingénierie et intégration des oxydes métalliques et de leurs interfaces (LAAS-NEO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), University of Texas at Dallas Richardson (UT Dallas), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

    المصدر: ISSN: 1932-7447.

    مصطلحات موضوعية: [SPI.MAT]Engineering Sciences [physics]/Materials

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    المصدر: Pistas Educativas; Vol. 42, Núm. 136 (2020): Número semestral (julio-diciembre 2020) ; 2448-847X ; 1405-1249

    وصف الملف: application/pdf

    Relation: http://itcelaya.edu.mx/ojs/index.php/pistas/article/view/2400/1947; http://itcelaya.edu.mx/ojs/index.php/pistas/article/downloadSuppFile/2400/1476; http://itcelaya.edu.mx/ojs/index.php/pistas/article/downloadSuppFile/2400/1477; Allen M.W., Durbin S. M. and Metson J. B., Silver oxide Schottky contacts on n-type , Appl. Phys. Lett. 91, 053512, 2007.; Di Benedetto Luigi, Gian Domenico Licciardo, Member, IEEE, Roberta Nipoti, and Salvatore Bellone, Member, IEEE, On the Crossing-Point of 4H-SiC Power Diodes Characteristics, IEEE Electron Device Letters, vol. 35, no. 2, p. 1-3, February 2014.; Elzwawi S, Hyland A., Lynam M., Partridge J. G., McCulloch D. G. and Allen M. W., Effect of Schottky gate type and channel defects on the stability of transparent MESFETs, Semicond. Sci. Technol. 30, pp.024008, 2015.; Frenzel H., Lajn A., Brandt M., Von Wenckstern H., Biehne G., Hochmuth H., Lorenz M., and Grundmann M., metal-semiconductor field-effect transistors with Ag-Schottky gates, Appl. Phys. Lett. 92, 192108, 2008.; Frenzel H., Lajn A., Von Wenckstern H., Lorenz M., Schein F., Zhang Z., and Grundmann M., Recent progress on -based metalsemiconductor field-effect transistors and their application in transparent integrated circuits, Adv. Mater., vol. 22, no. 47, pp. 5332–5349, Dec. 2010.; Grundmann M., H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, and M. Lorenz, -based MESFET Devices, Mater. Res. Soc. Symp. Proc. Vol. 1201, 2010.; Herbert B. Michaelson, The work function of the elements and its periodicity, J. Appl. Phys. 48, 4729, 1977.; Kao C. J., Kwon Y. W., Heo Y. W., Norton D. P., Pearton S. J., Ren F., and Chi G. C. , Comparison of metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23, 1024, 2005.; Klingshirn C., R. Hanschid, H. Priller, M. Decker, J. Zeller, H. Kalt, Superlattices and Microstructures, 38, pp. 209-222, 2005.; Klüpfel Fabian Johannes, Friedrich Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann, Comparison of -Based JFET, MESFET, and MISFET, IEEE Transactions on Electron Devices, vol. 60, no. 6, June 2013.; Klüpfel Fabian J., Holger von Wenckstern, and Marius Grundmann, Ring Oscillators Based on Channel JFETs and MESFETs, Adv. Electron. Mater, 1500431, pp. 1-5, 2016.; Lajn A., Wenckstern H. V., Zhang Z., Czekalla C., Biehne G., Lenzner J., Hochmuth H. , Lorenz M., Grundmann M., Wickert S., Vogt C., and Denecke R., Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type , J. Vac. Sci. Technol. B 27, 1769-1773, 2009.; Lorenz M., H. von Wenckstern, and M. Grundmann, Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors, Adv. Mater., vol. 23, no. 45, pp. 5383–5386, Dec. 2011.; Salina Muhamad, Mohamad Zainizan Sahdan, Mohamad.Haufiz Mamat and Mohamad Rusop, I-V Performances of Aligned Nanorods/MgO.3 .70 Thin Film Heterojunction for MESFET Applications, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December 2010.; Schein F., H. von Wenckstern, H. Frenzel, and M. Grundmann, -based n-channel junction field-effect transistor with roomtemperature- fabricated amorphous p-type ZnCo2O4 gate, IEEE Electron Device Lett., vol. 33, no. 5, pp. 676–678, May 2012.; Schifano R., E. V. Monakhov, U. Grossner, and B. G. Svensson, Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown , Appl. Phys. Lett. 91, 193507, 2007.; Sze, Semiconductor Devices Physics Technology, 2nd Ed, Wiley, pp. 242, 2002.; Vogt Sofie, Holger von Wenckstern, and Marius Grundmann, MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature, APPLIED PHYSICS LETTERS 113, 133501, 2018.; Von Wenckstern H., Z. P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn and M. Grundmann, Light beam induced current measurements on Schottky diodes and MESFETs, Mater. Res. Soc. Symp. Proc. Vol. 1201, 2010.; http://itcelaya.edu.mx/ojs/index.php/pistas/article/view/2400

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    المساهمون: National Science Foundation Graduate Research Fellowship, Eugene McDermott Graduate Fellowship, European Union’s Horizon 2020, Marie Skłodowska-Curie

    المصدر: Advanced Electronic Materials ; volume 6, issue 8 ; ISSN 2199-160X 2199-160X

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    المساهمون: Division of Industrial Innovation and Partnerships, Air Force Office of Scientific Research, Consejo Nacional de Ciencia y Tecnolog?a

    المصدر: ACS Applied Materials & Interfaces ; volume 11, issue 30, page 27048-27056 ; ISSN 1944-8244 1944-8252