المؤلفون: Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 464-471 (2024)

مصطلحات موضوعية: Amorphous IGZO-TFT, positive bias temperature stress (PBTS), negative bias temperature stress (NBTS), IGZO-nano-sheet, electrical instabilities, hydrogen-impact, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10540482/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/45121ce7cfa14c329d6bc55bdf2925ff

المؤلفون: Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li

المصدر: IEEE Open Journal of Nanotechnology, Vol 5, Pp 9-16 (2024)

مصطلحات موضوعية: a-IGZO TFT, positive bias temperature stress (PBTS), negative bias temperature stress (NBTS), high-κ HfO $_2$, oxide semiconductor (OS), atomic layer deposition (ALD), Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10494359/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/391eed6e6b14405ca2a88201290c828e

المؤلفون: Wang, Sisi, Wong, Man

مصطلحات موضوعية: Annealing, Fluorination, Indium-gallium-zinc oxide, Positive bias temperature stress, Reliability, Thin-film transistors

Relation: http://repository.ust.hk/ir/Record/1783.1-113981; Digest of Technical Papers - SID International Symposium, v. 52, (S2), 26 August 2021, p. 403-406; https://doi.org/10.1002/sdtp.15138; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(S2)&rft.date=2021&rft.spage=403&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Reliability+enhancement+of+an+indium-gallium-zinc+oxide+thin-film+transistor+by+pre-fluorination+non-oxidizing+annealing&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium; http://www.scopus.com/record/display.url?eid=2-s2.0-85115875711&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-113981
https://doi.org/10.1002/sdtp.15138
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(S2)&rft.date=2021&rft.spage=403&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Reliability+enhancement+of+an+indium-gallium-zinc+oxide+thin-film+transistor+by+pre-fluorination+non-oxidizing+annealing&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium
http://www.scopus.com/record/display.url?eid=2-s2.0-85115875711&origin=inward

المؤلفون: Wang, Sisi, Lu, Lei, Lv, Nannan, Wong, Man

مصطلحات موضوعية: Annealing, Fluorination, Indium-gallium-zinc oxide, Positive bias temperature stress, Reliability, Thin-film transistors

Relation: http://repository.ust.hk/ir/Record/1783.1-113627; Digest of Technical Papers - SID International Symposium, v. 52, (1), June 2021, p. 1120-1123; https://doi.org/10.1002/sdtp.14890; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(1)&rft.date=2021&rft.spage=1120&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Non-oxidizing+pre-annealing+for+enhanced+fluorination+of+an+indiumgallium-zinc+oxide+thin-film+transistor&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium; http://www.scopus.com/record/display.url?eid=2-s2.0-85113862291&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-113627
https://doi.org/10.1002/sdtp.14890
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0097-966X&rft.volume=v. 52&rft.issue=(1)&rft.date=2021&rft.spage=1120&rft.aulast=Wang&rft.aufirst=S.&rft.atitle=Non-oxidizing+pre-annealing+for+enhanced+fluorination+of+an+indiumgallium-zinc+oxide+thin-film+transistor&rft.title=Digest+of+Technical+Papers+-+SID+International+Symposium
http://www.scopus.com/record/display.url?eid=2-s2.0-85113862291&origin=inward

المؤلفون: Lu, Xiaowei, Wang, Mingxiang, Wong, Man

مصطلحات موضوعية: Degradation, Negative-bias temperature instability (NBTI) positive bias temperature stress, Poly-Si, Thin-film transistors (TFTs)

Relation: http://repository.ust.hk/ir/Record/1783.1-35070; IEEE Transactions on Electron Devices, v. 58, (10), October 2011, article number 5961619, p. 3501-3505; https://doi.org/10.1109/TED.2011.2160949; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0018-9383&rft.volume=58&rft.issue=10&rft.date=2011&rft.spage=3501&rft.aulast=Lu&rft.aufirst=Xiaowei&rft.atitle=A+Two-Stage+Degradation+Model+of+p-Channel+Low-Temperature+Poly-Si+Thin-Film+Transistors+Under+Positive+Bias+Temperature+Stress&rft.title=I.E.E.E.+transactions+on+electron+devices; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000295100300036; http://www.scopus.com/record/display.url?eid=2-s2.0-80053215557&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-35070
https://doi.org/10.1109/TED.2011.2160949
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0018-9383&rft.volume=58&rft.issue=10&rft.date=2011&rft.spage=3501&rft.aulast=Lu&rft.aufirst=Xiaowei&rft.atitle=A+Two-Stage+Degradation+Model+of+p-Channel+Low-Temperature+Poly-Si+Thin-Film+Transistors+Under+Positive+Bias+Temperature+Stress&rft.title=I.E.E.E.+transactions+on+electron+devices
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000295100300036
http://www.scopus.com/record/display.url?eid=2-s2.0-80053215557&origin=inward