المؤلفون: Seunghee Lee (77594), Miso Kim (773939), Geumbi Mun (3138111), Jongbeom Ko (11329268), Hye-In Yeom (8538663), Gwang-Heum Lee (11329271), Bonggeun Shong (1291524), Sang-Hee Ko Park (3000372)

مصطلحات موضوعية: Biochemistry, Cell Biology, Biotechnology, Developmental Biology, Cancer, Hematology, Infectious Diseases, Computational Biology, Chemical Sciences not elsewhere classified, indium aluminum oxide, layer deposition, DMAI, atomic-level controllability, aluminum precursors, surface reactions, thin-film transistors, semiconductor film, Al precursors, subthreshold slope, Plasma-Enhanced Atomic Layer Deposi., PEALD IAO, indium oxide, DFT, dimethylaluminum isopropoxide, field effect mobility, carrier suppressor, reactive TMA, turn-on voltage, indium precursor dose time, TFT

Relation: https://figshare.com/articles/journal_contribution/Effects_of_Al_Precursors_on_the_Characteristics_of_Indium_Aluminum_Oxide_Semiconductor_Grown_by_Plasma-Enhanced_Atomic_Layer_Deposition/16437236

الاتاحة: https://doi.org/10.1021/acsami.1c11304.s001

المؤلفون: Heungdong Kwon (5100257), Christopher Perez (1372530), Hyojin K. Kim (10725317), Mehdi Asheghi (1511581), Woosung Park (3925775), Kenneth E. Goodson (1539547)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Genetics, Pharmacology, Biotechnology, Developmental Biology, Cancer, Hematology, Infectious Diseases, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, H 2 plasma strips, heat conduction pathway, TiO, 98 nm PVD Pt, Plasma-Enhanced Atomic Layer Deposi., material, H 2 plasma, dielectric, Thermal Interface Enhancement, measurement, adhesion, deposition, TDTR, Thermal boundary resistances, Si, O 2, PEALD Pt films

Relation: https://figshare.com/articles/journal_contribution/Thermal_Interface_Enhancement_via_Inclusion_of_an_Adhesive_Layer_Using_Plasma-Enhanced_Atomic_Layer_Deposition/14515100

الاتاحة: https://doi.org/10.1021/acsami.0c19197.s001