المؤلفون: Kips, R., Pidduck, A.J., Houlton, M.R., Leenaers, A., Mace, J.D., Marie, O., Pointurier, F., Stefaniak, E.A., Taylor, P.D.P., van den Berghe, S., van Espen, Pierre, Van Grieken, René, Wellum, R.

المصدر: 0584-8547 ; Spectrochimica acta: part B : atomic spectroscopy

مصطلحات موضوعية: Chemistry

وصف الملف: pdf

Relation: info:eu-repo/semantics/altIdentifier/isi/000265755600002

الاتاحة: https://hdl.handle.net/10067/770570151162165141

المؤلفون: Healy, M.J.F., Pidduck, A.J., Dollinger, G., Gorgens, L., Bergmaier, A.

المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms ; volume 190, issue 1-4, page 630-635 ; ISSN 0168-583X

الاتاحة: http://dx.doi.org/10.1016/s0168-583x(01)01286-1
https://api.elsevier.com/content/article/PII:S0168583X01012861?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0168583X01012861?httpAccept=text/plain

المؤلفون: Uren, M.J., Herbert, D., Martin, T., Hughes, B.T., Birbeck, J., Balmer, R., Pidduck, A.J., Jones, S.K.

المصدر: physica status solidi (a) ; volume 188, issue 1, page 195-198 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/1521-396x(200111)188:1%3C195::aid-pssa195%3E3.0.co%3B2-9
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F1521-396X(200111)188:1%3C195::AID-PSSA195%3E3.0.CO%3B2-9
https://onlinelibrary.wiley.com/doi/full/10.1002/1521-396X(200111)188:1%3C195::AID-PSSA195%3E3.0.CO%3B2-9

المؤلفون: Ahmed, A., Dunford, R.B., Paul, D.J., Pepper, M., Churchill, A.C., Robbins, D.J., Pidduck, A.J.

Relation: Ahmed, A., Dunford, R.B., Paul, D.J. , Pepper, M., Churchill, A.C., Robbins, D.J. and Pidduck, A.J. (2000) Si/SiGe n-type inverted modulation doping using ion implantation. Thin Solid Films , 369(1-2), pp. 324-327. (doi:10.1016/S0040-6090(00)00873-7 )

الاتاحة: http://eprints.gla.ac.uk/48119/

المؤلفون: Dunford, R.B., Ahmed, A., Paul, D.J., Pepper, M., Churchill, A.C., Robbins, D.J., Pidduck, A.J.

Relation: Dunford, R.B., Ahmed, A., Paul, D.J. , Pepper, M., Churchill, A.C., Robbins, D.J. and Pidduck, A.J. (2000) Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures. Microelectronic Engineering , 53(1-4), pp. 205-208. (doi:10.1016/S0167-9317(00)00297-5 )

الاتاحة: http://eprints.gla.ac.uk/48116/

المؤلفون: Grobert, N., Terrones, M., Trasobares, S., Kordatos, K., Terrones, H., Olivares, J., Zhang, J.P., Redlich, Ph., Hsu, W.K., Reeves, C.L., Wallis, D.J., Zhu, Y.Q., Hare, J.P., Pidduck, A.J., Kroto, H.W., Walton, D.R.M.

المصدر: Applied Physics A: Materials Science & Processing ; volume 70, issue 2, page 175-183 ; ISSN 0947-8396 1432-0630

الاتاحة: http://dx.doi.org/10.1007/s003390050030
http://link.springer.com/content/pdf/10.1007/s003390050030.pdf
http://link.springer.com/article/10.1007/s003390050030/fulltext.html
http://link.springer.com/content/pdf/10.1007/s003390050030

المؤلفون: Churchill, A.C., Robbins, D.J., Wallis, D.J., Griffin, N., Paul, D.J., Pidduck, A.J., Leong, W.Y., Williams, G.M.

Relation: Churchill, A.C., Robbins, D.J., Wallis, D.J., Griffin, N., Paul, D.J. , Pidduck, A.J., Leong, W.Y. and Williams, G.M. (1998) Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , 16(3), pp. 1634-1638. (doi:10.1116/1.589952 )

الاتاحة: http://eprints.gla.ac.uk/48128/

المؤلفون: Paul, D.J., Ahmed, A., Pepper, M., Churchill, A.C., Robbins, D.J., Wallis, D.J., Pidduck, A.J.

Relation: Paul, D.J. , Ahmed, A., Pepper, M., Churchill, A.C., Robbins, D.J., Wallis, D.J. and Pidduck, A.J. (1998) Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , 16(3), pp. 1644-1647. (doi:10.1116/1.589953 )

الاتاحة: http://eprints.gla.ac.uk/48129/

المؤلفون: Churchill, A.C., Robbins, D.J., Wallis, D.J., Griffin, N., Paul, D.J., Pidduck, A.J.

Relation: Churchill, A.C., Robbins, D.J., Wallis, D.J., Griffin, N., Paul, D.J. and Pidduck, A.J. (1997) High-mobility two-dimensional electron gases in Si/SiGe heterostructures on relaxed SiGe layers grown at high temperature. Semiconductor Science and Technology , 12(8), pp. 943-946. (doi:10.1088/0268-1242/12/8/002 )

الاتاحة: http://eprints.gla.ac.uk/48132/

المؤلفون: Pidduck, A.J., Smith, G.C.

المصدر: Wear ; volume 212, issue 2, page 254-264 ; ISSN 0043-1648

الاتاحة: http://dx.doi.org/10.1016/s0043-1648(97)00081-1
https://api.elsevier.com/content/article/PII:S0043164897000811?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0043164897000811?httpAccept=text/plain

المؤلفون: Ali-Adib, Z., Hodge, P., Tredgold, R.H., Woolley, M., Pidduck, A.J.

المصدر: Thin Solid Films ; volume 242, issue 1-2, page 157-162 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/0040-6090(94)90521-5
https://api.elsevier.com/content/article/PII:0040609094905215?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:0040609094905215?httpAccept=text/plain

المؤلفون: Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., Spowart, J.

المصدر: Journal of Crystal Growth ; volume 127, issue 1-4, page 966-971 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/0022-0248(93)90769-s
https://api.elsevier.com/content/article/PII:002202489390769S?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:002202489390769S?httpAccept=text/plain

المؤلفون: Nayar, V., Pickering, C., Pidduck, A.J., Carline, R.T., Leong, W.Y., Robbins, D.J.

المصدر: Thin Solid Films ; volume 233, issue 1-2, page 40-45 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/0040-6090(93)90057-v
https://api.elsevier.com/content/article/PII:004060909390057V?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:004060909390057V?httpAccept=text/plain

المؤلفون: Cullis, A.G., Robbins, D.J., Pidduck, A.J., Smith, P.W.

المصدر: Journal of Crystal Growth ; volume 123, issue 3-4, page 333-343 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/0022-0248(92)90593-8
https://api.elsevier.com/content/article/PII:0022024892905938?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:0022024892905938?httpAccept=text/plain

المؤلفون: Pidduck, A.J., Robbins, D.J., Cullis, A.G., Leong, W.Y., Pitt, A.M.

المصدر: Thin Solid Films ; volume 222, issue 1-2, page 78-84 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/0040-6090(92)90042-a
https://api.elsevier.com/content/article/PII:004060909290042A?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:004060909290042A?httpAccept=text/plain

المؤلفون: Hirst, P.J., Humphreys, R.G., Satchell, J.S., Wooliscroft, M.J., Reeves, C.L., Williams, G., Pidduck, A.J., Willis, H.

المصدر: IEEE Transactions on Applied Superconductivity; Mar2001 Part 1 of 3, Vol. 11 Issue 1, p143, 4p, 1 Diagram, 5 Graphs

مصطلحات موضوعية: INTERFACES (Physical sciences), SUPERCONDUCTORS

المؤلفون: Ortolland, S., Wright, Nicolas G., Johnson, C. Mark, Knights, A.P., Coleman, Paul G., Burrows, C.P., Pidduck, A.J.

المصدر: Materials Science Forum; January 2001, Vol. 353 Issue: 1 p567-570, 4p

المؤلفون: Morrison, D.J., Pidduck, A.J., Moore, V., Wilding, P.J., Hilton, Keith P., Uren, Michael J., Johnson, C. Mark

المصدر: Materials Science Forum; May 2000, Vol. 338 Issue: 1 p1199-1202, 4p

المؤلفون: ROBBINS, D.J., PIDDUCK, A.J., GLASPER, J.L., YOUNG, I.M., PICKERING, C.

المصدر: Silicon Molecular Beam Epitaxy ; page 299-306 ; ISBN 9780444886200

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-88620-0.50037-7

المؤلفون: PIDDUCK, A.J., ROBBINS, D.J., YOUNG, I.M., PATEL, G.

المصدر: Silicon Molecular Beam Epitaxy ; page 255-262 ; ISBN 9780444886200

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-88620-0.50033-x