نتائج البحث - "Peterson, Carl"

1

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NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

المؤلفون: Liu, Yizheng, Roy, Saurav, Peterson, Carl, Bhattacharyya, Arkka, Krishnamoorthy, Sriram

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2409.17374

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2

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Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$

المؤلفون: Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram

مصطلحات موضوعية: Condensed Matter - Materials Science, Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2408.11342

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3

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Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $\beta$-Ga$_2$O$_3$ Epitaxial Drift Layers

المؤلفون: Peterson, Carl, Bhattacharyya, Arkka, Chanchaiworawit, Kittamet, Kahler, Rachel, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Kallistova, Anna, Mates, Thomas E., Krishnamoorthy, Sriram

المصدر: Appl. Phys. Lett. 125, 182103 (2024)

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2407.17089

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4

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Over 6 $\mu$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $\beta$-Ga$_2$O$_3$ Drift Layers

المؤلفون: Bhattacharyya, Arkka, Peterson, Carl, Chanchaiworawit, Kittamet, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Krishnamoorthy, Sriram

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2311.14253

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5

Academic Journal

Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination

المؤلفون: Liu, Yizheng, Roy, Saurav, Peterson, Carl, Bhattacharyya, Arkka, Krishnamoorthy, Sriram

المساهمون: Advanced Research Projects Agency - Energy, Coherent/II–VI Foundation

المصدر: AIP Advances ; volume 15, issue 1 ; ISSN 2158-3226

الاتاحة: https://doi.org/10.1063/5.0251069
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0251069/20344741/015114_1_5.0251069.pdf

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6

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Enhancing the Electron Mobility in Si-doped (010) $\beta$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

المؤلفون: Bhattacharyya, Arkka, Peterson, Carl, Itoh, Takeki, Roy, Saurav, Cooke, Jacqueline, Rebollo, Steve, Ranga, Praneeth, Sensale-Rodriguez, Berardi, Krishnamoorthy, Sriram

مصطلحات موضوعية: Condensed Matter - Materials Science, Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2212.02062

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7

Dissertation/ Thesis

Effects on the precision of a brain-computer interface when reducing the number of neural recordings used as input

Effekter på precisionen i ett brain-computer interface när man minskar antalet neurala upptagningar som används som indata

المؤلفون: Knowles, Oscar, Peterson, Carl

مصطلحات موضوعية: Computer Sciences, Datavetenskap (datalogi)

وصف الملف: application/pdf

Relation: TRITA-EECS-EX ; 2022:451

الاتاحة: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-319587

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8

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Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

المؤلفون: Alema, Fikadu, Peterson, Carl, Bhattacharyya, Arkka, Roy, Saurav, Krishnamoorthy, Sriram, Osinsky, Andrei

مصطلحات موضوعية: Condensed Matter - Materials Science, Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2208.02322

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9

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High-Mobility Tri-Gate $\beta$-Ga$_2$O$_3$ MESFETs with a Power Figure of Merit over 0.9 GW/cm$^2$

المؤلفون: Bhattacharyya, Arkka, Roy, Saurav, Ranga, Praneeth, Peterson, Carl, Krishnamoorthy, Sriram

مصطلحات موضوعية: Physics - Applied Physics, Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/2206.12539

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10

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4.4 kV $\beta$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

المؤلفون: Bhattacharyya, Arkka, Sharma, Shivam, Alema, Fikadu, Ranga, Praneeth, Roy, Saurav, Peterson, Carl, Seryogin, George, Osinsky, Andrei, Singisetti, Uttam, Krishnamoorthy, Sriram

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2201.10028

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11

Report

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

المؤلفون: Jesenovec, Jani, Dutton, Benjamin L., Stone-Weiss, Nicholas, Chmielewski, Adrian, Saleh, Muad, Peterson, Carl, Alem, Nasim, Krishnamoorthy, Sriram, McCloy, John S.

مصطلحات موضوعية: Condensed Matter - Materials Science, Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2201.03673

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12

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Multi-kV class $\beta$-Ga$_2$O$_3$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm$^2$

المؤلفون: Bhattacharyya, Arkka, Ranga, Praneeth, Roy, Saurav, Peterson, Carl, Alema, Fikadu, Seryogin, George, Osinsky, Andrei, Krishnamoorthy, Sriram

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/2106.06661

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13

Academic Journal

Erratum: “Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123, 243502 (2023)]

المؤلفون: Roy, Saurav, Kostroun, Benjamin, Cooke, Jacqueline, Liu, Yizheng, Bhattacharyya, Arkka, Peterson, Carl, Sensale-Rodriguez, Berardi, Krishnamoorthy, Sriram

المصدر: Applied Physics Letters ; volume 124, issue 2 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/5.0192873
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0192873/18290123/029901_1_5.0192873.pdf

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14

Academic Journal

Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3

المؤلفون: Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram

المساهمون: Coherent / II-VI Foundation, Air Force Office of Scientific Research

المصدر: Applied Physics Letters ; volume 126, issue 1 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/5.0234267
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0234267/20328921/012105_1_5.0234267.pdf

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15

Academic Journal

Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3.

المؤلفون: Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram

المصدر: Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p

مصطلحات موضوعية: DIELECTRIC measurements, CHEMICAL vapor deposition, DIELECTRICS, HIGH temperatures, ALUMINUM oxide

16

Academic Journal

Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination.

المؤلفون: Liu, Yizheng, Roy, Saurav, Peterson, Carl, Bhattacharyya, Arkka, Krishnamoorthy, Sriram

المصدر: AIP Advances; Jan2025, Vol. 15 Issue 1, p1-6, 6p

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17

Academic Journal

200 cm²/Vs electron mobility and controlled low 10¹⁵ cm⁻³ Si doping in (010) β-Ga2O3 epitaxial drift layers.

المؤلفون: Peterson, Carl, Bhattacharyya, Arkka, Chanchaiworawit, Kittamet, Kahler, Rachel, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Kallistova, Anna, Mates, Thomas E., Krishnamoorthy, Sriram

المصدر: Applied Physics Letters; 10/28/2024, Vol. 125 Issue 18, p1-7, 7p

مصطلحات موضوعية: CHEMICAL vapor deposition, HOMOEPITAXY, THICK films, EPITAXIAL layers, SUBSTRATES (Materials science)

18

Life insurance sales representative

المؤلفون: Peterson, Carl E.

المصدر: Online version.

مصطلحات موضوعية: Work sampling. Life insurance agents.

الاتاحة: http://www.uwstout.edu/lib/thesis/2001/2001petersonc.pdf

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19

Academic Journal

Alternative alloy to increase bandgap in gallium Oxide, β-(Sc Ga1-)2O3, and rare earth Stark luminescence

المؤلفون: Jesenovec, Jani, Dutton, Benjamin L., Remple, Cassandra, Smith-Gray, Natalie, Murugesan, Magesh, Peterson, Carl, Downing, Brooke K., Krishnamoorthy, Sriram, McCluskey, Matthew D., McCloy, John S.

المساهمون: M.J. Murdock Charitable Trust, Air Force Office of Scientific Research

المصدر: Journal of Crystal Growth ; volume 596, page 126823 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2022.126823
https://api.elsevier.com/content/article/PII:S0022024822003086?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024822003086?httpAccept=text/plain

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20

Academic Journal

Low Q C V F 20 A/1.4 kV β-Ga₂O₃ Vertical Trench High-k RESURF Schottky Barrier Diode With Turn-On Voltage of 0.5 V

المؤلفون: Roy, Saurav, Kostroun, Benjamin, Liu, Yizheng, Cooke, Jacqueline, Bhattacharyya, Arkka, Peterson, Carl, Sensale-Rodriguez, Berardi, Krishnamoorthy, Sriram

المساهمون: Coherent/II-VI Foundation Block Gift Program and in part by the Air Force Office Of Scientific Research

المصدر: IEEE Electron Device Letters ; volume 45, issue 12, page 2487-2490 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2024.3469283
http://xplorestaging.ieee.org/ielx8/55/10769996/10697223.pdf?arnumber=10697223

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