نتائج البحث - "Park, Eunpyo"

1

Academic Journal

Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi‐Layer MoS 2 Growth

المصدر: Advanced Functional Materials ; volume 34, issue 23 ; ISSN 1616-301X 1616-3028

الاتاحة: https://doi.org/10.1002/adfm.202312365
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202312365

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2

Academic Journal

Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing

المؤلفون: Woo, Dong Yeon, Noh, Gichang, Park, Eunpyo, Kim, Min Jee, Lee, Dae Kyu, Sung, Yong Woo, Kim, Jaewook, Jeong, YeonJoo, Park, Jongkil, Park, Seongsik, Jang, Hyun Jae, Choi, Nakwon, Jo, Yooyeon, Kwak, Joon Young

المساهمون: National Research Foundation of Korea, Korea Institute of Science and Technology

المصدر: Neuromorphic Computing and Engineering ; volume 4, issue 3, page 034001 ; ISSN 2634-4386

الاتاحة: http://dx.doi.org/10.1088/2634-4386/ad3a94
https://iopscience.iop.org/article/10.1088/2634-4386/ad3a94
https://iopscience.iop.org/article/10.1088/2634-4386/ad3a94/pdf

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3

Academic Journal

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices

المؤلفون: Jo, Yooyeon, Woo, Dong Yeon, Noh, Gichang, Park, Eunpyo, Kim, Min Jee, Sung, Yong Woo, Lee, Dae Kyu, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong‐Keuk, Park, Seongsik, Kwak, Joon Young

المساهمون: National Research Foundation of Korea, Korea Institute of Science and Technology

المصدر: Advanced Functional Materials ; volume 34, issue 10 ; ISSN 1616-301X 1616-3028

الاتاحة: http://dx.doi.org/10.1002/adfm.202309058
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202309058

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4

Conference

Adaptive Spiking Neural Network Neuromorphic Hardware for Interfacing Between Emerging Neuron and Synaptic Devices

المؤلفون: Kim, Min Jee, Im, Jaegwang, Kim, Keonhee, Jo, Yooyeon, Noh, Gichang, Park, Eunpyo, Lee, Dae Kyu, Kim, Inho, Jeong, YeonJoo, Lee, Hyung-Min, Kwak, Joon Young

المساهمون: National Research Foundation, Korea Institute of Science and Technology

المصدر: 2024 IEEE Biomedical Circuits and Systems Conference (BioCAS) ; page 1-5

الاتاحة: https://doi.org/10.1109/biocas61083.2024.10798361
http://xplorestaging.ieee.org/ielx8/10798096/10798098/10798361.pdf?arnumber=10798361

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5

Academic Journal

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9

المساهمون: Lee, Chul-Ho, Lee, Gwan-Hyoung

مصطلحات موضوعية: CHARGE-TRANSFER, BAND-OFFSET, HYSTERESIS, MOS2, GESE, DYNAMICS, PHASE, charge transfer, germanium selenide, metal-organic chemical vapor deposition, synaptic devices, van der Waals heterostructures

Relation: Advanced Materials, Vol.34 No.41, p. 2204982; https://hdl.handle.net/10371/191459; 000851968800001; 2-s2.0-85137656223; 174956

الاتاحة: https://hdl.handle.net/10371/191459
https://doi.org/10.1002/adma.202204982

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6

Academic Journal

Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control

المؤلفون: Kim, Tae Soo, Dhakal, Krishna P., Park, Eunpyo, Noh, Gichang, Chai, Hyun‐Jun, Kim, Youngbum, Oh, Saeyoung, Kang, Minsoo, Park, Jeongwon, Kim, Jaewoo, Kim, Suhyun, Jeong, Hu Young, Bang, Sunghwan, Kwak, Joon Young, Kim, Jeongyong, Kang, Kibum

المصدر: Small ; volume 18, issue 20 ; ISSN 1613-6810 1613-6829

الاتاحة: https://doi.org/10.1002/smll.202106368
https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202106368
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/smll.202106368

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7

Academic Journal

A triple-level cell charge trap flash memory device with CVD-grown MoS2

المؤلفون: Kim, Minkyung, Park, Eunpyo, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong-Keuk, Park, Sung-Yun, Kwak, Joon Young

المساهمون: Institute for Information and Communications Technology Promotion, Korea Institute of Science and Technology, National Research Foundation of Korea

المصدر: Results in Physics ; volume 38, page 105620 ; ISSN 2211-3797

الاتاحة: http://dx.doi.org/10.1016/j.rinp.2022.105620
https://api.elsevier.com/content/article/PII:S2211379722003321?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2211379722003321?httpAccept=text/plain

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8

Academic Journal

Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi‐Layer MoS2 Growth.

المصدر: Advanced Functional Materials; 6/6/2024, Vol. 34 Issue 23, p1-13, 13p

مصطلحات موضوعية: DIFFUSION control, CHEMICAL vapor deposition, ELECTRON mobility, MONOMOLECULAR films, OPTOELECTRONIC devices, ELECTRONIC equipment

9

Academic Journal

Grain boundary control for high-reliability HfO2-based RRAM

المؤلفون: Jeong, Dong Geun, Park, Eunpyo, Jo, Yooyeon, Yang, Eunyeong, Noh, Gichang, Lee, Dae Kyu, Kim, Min Jee, Jeong, YeonJoo, Jang, Hyun Jae, Joe, Daniel J., Chang, Jiwon, Kwak, Joon Young

المساهمون: KIST, KRISS, National Research Foundation of Korea

المصدر: Chaos, Solitons & Fractals ; volume 183, page 114956 ; ISSN 0960-0779

الاتاحة: https://doi.org/10.1016/j.chaos.2024.114956
https://api.elsevier.com/content/article/PII:S0960077924005083?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0960077924005083?httpAccept=text/plain

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10

Academic Journal

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices (Adv. Funct. Mater. 10/2024)

المؤلفون: Jo, Yooyeon, Woo, Dong Yeon, Noh, Gichang, Park, Eunpyo, Kim, Min Jee, Sung, Yong Woo, Lee, Dae Kyu, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong‐Keuk, Park, Seongsik, Kwak, Joon Young

المصدر: Advanced Functional Materials ; volume 34, issue 10 ; ISSN 1616-301X 1616-3028

الاتاحة: http://dx.doi.org/10.1002/adfm.202470058
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202470058

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11

Academic Journal

A study on pattern classifications with MoS2-based CTF synaptic device

المؤلفون: Jo, Yooyeon, Kim, Minkyung, Park, Eunpyo, Noh, Gichang, Hwang, Gyu Weon, Jeong, YeonJoo, Kim, Jaewook, Park, Jongkil, Park, Seongsik, Jang, Hyun Jae, Kwak, Joon Young

المساهمون: Korea Institute of Science and Technology, National Research Foundation of Korea

المصدر: Journal of Alloys and Compounds ; volume 982, page 173699 ; ISSN 0925-8388

الاتاحة: http://dx.doi.org/10.1016/j.jallcom.2024.173699
https://api.elsevier.com/content/article/PII:S0925838824002858?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925838824002858?httpAccept=text/plain

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12

Academic Journal

IGZO charge trap flash device for reconfigurable logic functions

المؤلفون: Park, Eunpyo, Woo, Dong Yeon, Noh, Gichang, Jo, Yooyeon, Lee, Dae Kyu, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Park, Seongsik, Jang, Hyun Jae, Choi, Nakwon, Kim, Sangbum, Kwak, Joon Young

المساهمون: National Research Foundation of Korea, Korea Institute of Science and Technology

المصدر: Applied Physics Letters ; volume 124, issue 12 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0189130
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0189130/19834142/123501_1_5.0189130.pdf

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13

Academic Journal

Doping-Free All PtSe 2 Transistor via Thickness-Modulated Phase Transition

المؤلفون: Das, Tanmoy, Yang, Eunyeong, Seo, Jae Eun, Kim, Jeong Hyeon, Park, Eunpyo, Kim, Minkyung, Seo, Dongwook, Kwak, Joon Young, Chang, Jiwon

المساهمون: National Research Foundation of Korea, Korea Institute for Advancement of Technology

المصدر: ACS Applied Materials & Interfaces ; volume 13, issue 1, page 1861-1871 ; ISSN 1944-8244 1944-8252

الاتاحة: https://doi.org/10.1021/acsami.0c17810
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c17810

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14

Academic Journal

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge 4 Se 9

المصدر: Advanced Materials ; volume 35, issue 13 ; ISSN 0935-9648 1521-4095

الاتاحة: https://doi.org/10.1002/adma.202300755
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202300755

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15

Academic Journal

Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

المؤلفون: Park, Eunpyo, Jang, Suyeon, Noh, Gichang, Jo, Yooyeon, Lee, Dae Kyu, Kim, In Soo, Song, Hyun-Cheol, Kim, Sangbum, Kwak, Joon Young

المساهمون: National Research Foundation of Korea, Korea Institute of Science and Technology

المصدر: Nano Letters ; volume 23, issue 20, page 9626-9633 ; ISSN 1530-6984 1530-6992

الاتاحة: http://dx.doi.org/10.1021/acs.nanolett.3c03510
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03510

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16

Academic Journal

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

المؤلفون: Jo, Yooyeon, Lee, Ji Young, Park, Eunpyo, Kim, Hyun-Soo, Choi, Hyung-Jin, Mun, Seunguk, Kim, Yunseok, Hur, Sunghoon, Yoon, Jung Ho, Jang, Ji-Soo, Kang, Chong-Yun, Baek, Seung Hyub, Baik, Jeong Min, Kwak, Joon Young, Song, Hyun-Cheol

المساهمون: National Research Foundation of Korea, Institute for Information and Communications Technology Promotion, Korea Institute of Science and Technology

المصدر: ACS Applied Electronic Materials ; volume 5, issue 8, page 4549-4555 ; ISSN 2637-6113 2637-6113

الاتاحة: http://dx.doi.org/10.1021/acsaelm.3c00691
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00691

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17

Academic Journal

Generation of super high frequencies by graphene on piezoelectric buffer layer upon applied nanosecond electrical pulse

المؤلفون: Kiprijanovič, Oleg, Park, Eunpyo, Kwak, Joon Young, Ardaravičius, Linas

المساهمون: National Research Foundation of Korea

المصدر: AIP Advances ; volume 13, issue 6 ; ISSN 2158-3226

الاتاحة: http://dx.doi.org/10.1063/5.0148047
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0148047/17928696/065205_1_5.0148047.pdf

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18

Academic Journal

Demonstration of PdSe 2 CMOS Using Same Metal Contact in PdSe 2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition

المؤلفون: Seo, Jae Eun, Park, Eunpyo, Das, Tanmoy, Kwak, Joon Young, Chang, Jiwon

المساهمون: National Research Foundation of Korea, Yonsei University, Ministry of Science, ICT and Future Planning

المصدر: Advanced Electronic Materials ; volume 8, issue 11 ; ISSN 2199-160X 2199-160X

الاتاحة: http://dx.doi.org/10.1002/aelm.202200485
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200485
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.202200485

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19

Academic Journal

A pentagonal 2D layered PdSe 2 -based synaptic device with a graphene floating gate

المؤلفون: Park, Eunpyo, Seo, Jae Eun, Noh, Gichang, Jo, Yooyeon, Woo, Dong Yeon, Kim, In Soo, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong-Keuk, Kim, Sangbum, Chang, Jiwon, Kwak, Joon Young

المساهمون: National Research Foundation of Korea, Korea Institute of Science and Technology, Institute for Information and Communications Technology Promotion

المصدر: Journal of Materials Chemistry C ; volume 10, issue 43, page 16536-16545 ; ISSN 2050-7526 2050-7534

الاتاحة: http://dx.doi.org/10.1039/d2tc03544h
http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03544H

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20

Academic Journal

Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors

المؤلفون: Seo, Jae Eun, Das, Tanmoy, Park, Eunpyo, Seo, Dongwook, Kwak, Joon Young, Chang, Jiwon

Relation: ACS APPLIED MATERIALS & INTERFACES, v.13, no.36, pp.43480 - 43488; https://scholarworks.unist.ac.kr/handle/201301/54126; 39009; 2-s2.0-85114617973; 000697282300109

الاتاحة: https://scholarworks.unist.ac.kr/handle/201301/54126
https://doi.org/10.1021/acsami.1c08028
https://pubs.acs.org/doi/10.1021/acsami.1c08028

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