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1Academic Journal
المؤلفون: Vodjdani, N., Lemarchand, A., Paradan, H.
المصدر: Journal de Physique Colloques ; https://hal.science/jpa-00222259 ; Journal de Physique Colloques, 1982, 43 (C5), pp.C5-339-C5-349. ⟨10.1051/jphyscol:1982539⟩
مصطلحات موضوعية: [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00222259; https://hal.science/jpa-00222259; https://hal.science/jpa-00222259/document; https://hal.science/jpa-00222259/file/ajp-jphyscol198243C539.pdf
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2Academic Journal
المؤلفون: Theeten, J.B., Hottier, F., Paradan, H.
المصدر: ISSN: 0035-1687.
مصطلحات موضوعية: Auger effect, electron diffraction examination of materials, gallium arsenide, III V semiconductors, low energy electron diffraction, semiconductor growth, GaAs surfaces, vapour phase epitaxial growth, in situ measurements, ellipsometry measurements, LEED, RHEED, AES, 100 GaAs epitaxial layers, H sub 2 GaAs AsCl sub 3 system, solid vapour interface, chemical vapour deposition, crystal growth mechanism, CVD reactor, UHV chamber, semiconductor, [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00244093; https://hal.archives-ouvertes.fr/jpa-00244093; https://hal.archives-ouvertes.fr/jpa-00244093/document; https://hal.archives-ouvertes.fr/jpa-00244093/file/ajp-rphysap_1976_11_5_587_0.pdf
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3Academic Journal
المؤلفون: Theeten, J.B., Paradan, H., Escarieux, M., Domange, J.L., Bonnerot, J.
المصدر: ISSN: 0035-1687.
مصطلحات موضوعية: low energy electron diffraction, low energy electron diffraction apparatus, fast temperature variations, [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00243600; https://hal.archives-ouvertes.fr/jpa-00243600; https://hal.archives-ouvertes.fr/jpa-00243600/document; https://hal.archives-ouvertes.fr/jpa-00243600/file/ajp-rphysap_1972_7_1_73_0.pdf