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1Academic Journal
المؤلفون: J. A. Moreno-Pérez, I. Ruiz-García, P. Martín-Holgado, A. Romero-Maestre, M. Anguiano, R. Vila, M. A. Carvajal
المصدر: Sensors, Vol 23, Iss 7, p 3771 (2023)
مصطلحات موضوعية: general purpose MOSFET, proton beams, dosimetry, Chemical technology, TP1-1185
وصف الملف: electronic resource
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2Academic Journal
المؤلفون: Martínez, Pedro J., Maset Sancho, Enrique, P. Martín-Holgado, Morilla, Yolanda, Sanchis Kilders, Esteban, Gilabert Palmer, David
المصدر: Martínez, P.J.; Maset, E.; Martín-Holgado, P.; Morilla, Y.; Gilabert, D.; Sanchis-Kilders, E. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs. Materials 2019, 12, 2760. https://doi.org/10.3390/ma12172760
مصطلحات موضوعية: electrònica, física, electrònica materials, high-electron-mobility transistor (HEMT), gallium nitride (GaN), radiation hardness, assurance testing, radiation effects, total ionizing dose (TID)
وصف الملف: application/pdf
Relation: Materials, 2019, vol. 12, num. 17, p. 1-15; https://hdl.handle.net/10550/91370; 140103
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3Periodical
المصدر: Current Opinion in Gastroenterology; July 2023, Vol. 39 Issue: 4 p315-319, 5p
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4Periodical
المؤلفون: Mata-Romero, Pilar, Martín-Holgado, Daniel, Ferreira-Nossa, Hal C., González-Cordero, Pedro L., Izquierdo-Martín, Ana, Barros-García, Patricia, Fernandez-Gonzalez, Nuria, Fernández-Pereira, Luis, Cámara-Hijón, Carmen, Molina-Infante, Javier
المصدر: Gastroenterología y Hepatología (ScienceDirect); 20220101, Issue: Preprints