المؤلفون: Hyo-Jin Kim, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, Dae-Hyun Kim

المصدر: Electronics, Vol 12, Iss 259, p 259 (2023)

مصطلحات موضوعية: small-signal model (SSM), high-electron-mobility transistor (HEMT), cut-off frequency ( f T ), output conductance ( g o ), Electronics, TK7800-8360

Relation: https://www.mdpi.com/2079-9292/12/2/259; https://doaj.org/toc/2079-9292; https://doaj.org/article/3732609a0d594fafb5e289fdc26d5d1c

الاتاحة: https://doi.org/10.3390/electronics12020259
https://doaj.org/article/3732609a0d594fafb5e289fdc26d5d1c

المؤلفون: Lukić, Vladan M., Lukić, Petar, Šašić, Rajko M.

المصدر: Tehnika - Novi materijali

مصطلحات موضوعية: transkonduktansa, SiC, MOSFET, modelovanje, izlazna konduktansa, transcoductance, output conductance, modeling

Relation: https://machinery.mas.bg.ac.rs/handle/123456789/931; https://hdl.handle.net/21.15107/rcub_technorep_1397

الاتاحة: https://hdl.handle.net/21.15107/rcub_technorep_1397
https://machinery.mas.bg.ac.rs/handle/123456789/931

المؤلفون: Li, Guoli, Fan, Zizheng, André, Nicolas, Xu, Yongye, Xia, Ying, Iniguez, Benjamin, Liao, Lei, Flandre, Denis

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

المصدر: IEEE Electron Device Letters, Vol. 42, no.1, p. 94-97 (2021)

مصطلحات موضوعية: Two-dimensional (2D) transistor, Output conductance, Low temperature, Contact resistance, Carrier mobility, Schottky contact

Relation: boreal:241726; http://hdl.handle.net/2078.1/241726; urn:ISSN:0741-3106; urn:EISSN:1558-0563

الاتاحة: http://hdl.handle.net/2078.1/241726
https://doi.org/10.1109/LED.2020.3042212

المؤلفون: A. Daghighi

المصدر: Iranian Journal of Electrical and Electronic Engineering, Vol 9, Iss 3, Pp 143-149 (2013)

مصطلحات موضوعية: Silicon-on-Insulator, Output-Conductance, Linearity, Body-Contact, MOSFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://ijeee.iust.ac.ir/browse.php?a_code=A-10-950-1&slc_lang=en&sid=1; https://doaj.org/toc/1735-2827; https://doaj.org/toc/2383-3890

URL الوصول: https://doaj.org/article/4956a18e6d9a44ba9ae0469a05c26277

المؤلفون: Lukić, Vladan M., Lukić, Petar M., Šašić, Rajko

المصدر: Tehnika - Novi materijali

مصطلحات موضوعية: modeling, MOSFET, SiC, transcoductance, output conductance, modelovanje, transkonduktansa, izlazna konduktansa

Relation: http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1397; https://hdl.handle.net/21.15107/rcub_technorep_1397

الاتاحة: http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1397
https://hdl.handle.net/21.15107/rcub_technorep_1397

المؤلفون: Filho, Walter Goncalez, Martino, Joao A., Agopian, Paula G. D.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: analog circuit design, Line TFET, output conductance

Relation: SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices; http://dx.doi.org/10.1109/SBMicro.2019.8919309; SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.; http://hdl.handle.net/11449/198338; 2-s2.0-85077214291

الاتاحة: http://hdl.handle.net/11449/198338
https://doi.org/10.1109/SBMicro.2019.8919309

المؤلفون: Goncalez Filho, Walter, Martino, Joao A., Agopian, Paula G. D., IEEE

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Line TFET, output conductance, analog circuit design

Relation: 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019); 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.; http://hdl.handle.net/11449/195388; WOS:000534490900020

الاتاحة: http://hdl.handle.net/11449/195388

المؤلفون: Gonçalez Filho, W., Martino, J. A., Agopian, P. G.D.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Analog de-sign, Line-TFET, Output conductance

Relation: Journal of Integrated Circuits and Systems; http://dx.doi.org/10.29292/jics.v15i1.112; Journal of Integrated Circuits and Systems, v. 15, n. 1, 2020.; http://hdl.handle.net/11449/198918; 2-s2.0-85085771389

الاتاحة: http://hdl.handle.net/11449/198918
https://doi.org/10.29292/jics.v15i1.112

المؤلفون: Paula Ghedini Der Agopian, Joao Antonio Martino, Walter Goncalez Filho

المساهمون: Universidade de São Paulo (USP), Universidade Estadual Paulista (Unesp)

المصدر: Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP

مصطلحات موضوعية: Materials science, Analogue electronics, business.industry, Output conductance, Conductance, Optoelectronics, Line-TFET, Electrical and Electronic Engineering, Analog de-sign, business, Device parameters, Line (electrical engineering)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41dbcd90159cae927c5ed8f61c87d947

المؤلفون: Makovejev, Sergej, Kazemi Esfeh, Babak, Raskin, Jean-Pierre, Kilchytska, Valeriya, Flandre, Denis, Barral, V., Planes, N., Haond, M., 2014 4th European Solid State Device Research Conference (ESSDERC 2014)

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

مصطلحات موضوعية: Analog figures of merit, Intrinsic gain, Output conductance, FDSOI, UTBB, Self-heating

Relation: boreal:157252; http://hdl.handle.net/2078.1/157252

الاتاحة: http://hdl.handle.net/2078.1/157252
https://doi.org/10.1109/ESSDERC.2014.6948800

المؤلفون: Leal, João Vitor da Costa

المساهمون: Agopian, Paula Ghedini Der, Martino, João Antonio

مصطلحات موضوعية: Baixa temperatura, Transistor de nanofolha, Transistores, Microeletrônica, Caracterização elétrica, Efeito quântico, GAA, Transconductance, Threshold voltage, Temperature, Subthreshold swing, Quantum effect, DIBL, Nanosheet transistor, Intrinsic gain, Output conductance

وصف الملف: application/pdf

Relation: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-20042022-082639/

الاتاحة: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-20042022-082639/
https://doi.org/10.11606/D.3.2022.tde-20042022-082639

المؤلفون: Petrović, Ivan

المساهمون: Matić, Tomislav

مصطلحات موضوعية: TECHNICAL SCIENCES. Electrical Engineering. Electronics, Unipolarni tranzistori (tranzistori s efektom polja) - FET, TEHNIČKE ZNANOSTI. Elektrotehnika. Elektronika, Spojni FET - JFET Metal oxidni FET - MOSFET Izlazna vodljivost d g Strmina m, Output conductance d g Gradient m g, Unipolar tranzistors (Field effect transistors) - FET Junction FET - JFET Metal oxide semiconductor FET - MOSFET

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3912::85bd65d78ca2a3dc119f14b044ef29b0
https://repozitorij.etfos.hr/islandora/object/etfos:626/datastream/PDF

المؤلفون: Vestling, Lars, Ankarcrona, Johan, Olsson, Jörgen, 1966

المصدر: IEEE Transactions on Electron Devices. 49(6):976-980

مصطلحات موضوعية: LV HF LDMOS transistor, S-parameter, current-voltage characteristics, equivalent circuits, layout changes, microwave FET, model parameters, n-well/p-base junction, output capacitance, output performance, small-signal parameters, total output conductance, TECHNOLOGY, Electrical engineering, electronics and photonics, Electronics, TEKNIKVETENSKAP, Elektroteknik, elektronik och fotonik, Elektronik

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-93401

المؤلفون: Kilchytska, Valeriya, Makovejev, Sergej, Barraud, S., Poiroux, T., Raskin, Jean-Pierre, Flandre, Denis

المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

المصدر: Solid-State Electronics, Vol. 112, p. 78-84 (24/02/2015)

مصطلحات موضوعية: Trigate nanowire MOSFETs, Analog figures of merit, Transconductance, Output conductance, Intrinsic gain, High-temperature

Relation: boreal:157073; http://hdl.handle.net/2078.1/157073; urn:ISSN:0038-1101; urn:EISSN:1879-2405

الاتاحة: http://hdl.handle.net/2078.1/157073
https://doi.org/10.1016/j.sse.2015.02.003

المؤلفون: Kilchytska, Valeriya, Flandre, Denis, Chung, T. M., Olbrechts, Benoit, Vovk, Ya., Raskin, Jean-Pierre, 3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07)

المساهمون: UCL - FSA/ELEC - Département d'électricité

المصدر: Solid-State Electronics, Vol. 51, no. 9, p. 1238-1244 (2007)

مصطلحات موضوعية: Silicon-on-nothing Mosfets, Si Layer Transfer, Self-heating Effect, Ultra-thin Box, Output Conductance, Frequency Response

Relation: boreal:59527; http://hdl.handle.net/2078.1/59527; urn:ISSN:0038-1101; urn:EISSN:1879-2405

الاتاحة: http://hdl.handle.net/2078.1/59527
https://doi.org/10.1016/j.sse.2007.07.021

المؤلفون: Kilchytska, Valeriya, Pailloncy, Guillaume, Raskin, Jean-Pierre, Collaert, N., Jurczak, Malgorzata, Flandre, Denis, 8th International Conference on Ultimate Integration on Silicon (ULIS 2007)

المساهمون: UCL - FSA/ELEC - Département d'électricité, IMEC, Ukraine National Academy of Science - Institute of Semiconductor Physics

مصطلحات موضوعية: FD SOI MOSFETs, Output conductance frequency response

Relation: boreal:90273; http://hdl.handle.net/2078.1/90273

الاتاحة: http://hdl.handle.net/2078.1/90273

المؤلفون: Jose Luis Gonzalez, Gerhard Martin Landauer, David Jiménez

المساهمون: Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

المصدر: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I

مصطلحات موضوعية: Work (thermodynamics), current-voltage relation, Transconductance, Enginyeria electrònica::Circuits electrònics [Àrees temàtiques de la UPC], Integrated circuit design, law.invention, transconductance, law, Verilog-A, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Nanotechnology, energy levels, Electrical and Electronic Engineering, circuit simulators, Physics, drain current, business.industry, Graphene, Nanotecnologia, GFET-based integrated circuit design, Transistor, Electrical engineering, Biasing, graphene field-effect transistor, Computer Science Applications, intrinsic gain, drift-diffusion model, Dirac point, current saturation, low-voltage biasing regime, output conductance, business, Energy (signal processing), Verilog-A compatible compact model

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d449fa6b2008c89e9adfd47d8a89078
https://hdl.handle.net/2117/24401

المؤلفون: Kilchytska, Valeriya, Flandre, Denis, NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices

المساهمون: UCL - FSA/ELEC - Département d'électricité

مصطلحات موضوعية: SOI MOSFETs, Output conductance, Frequency response, Device simulation, Device scaling

Relation: boreal:90200; http://hdl.handle.net/2078.1/90200

الاتاحة: http://hdl.handle.net/2078.1/90200

المؤلفون: Landauer, Gerhard Martin, González Jiménez, José Luis, Jiménez Jiménez, David

المساهمون: Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

مصطلحات موضوعية: Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics, Nanotechnology, Dirac point, GFET-based integrated circuit design, Verilog-A compatible compact model, circuit simulators, current saturation, current-voltage relation, drain current, drift-diffusion model, energy levels, graphene field-effect transistor, intrinsic gain, low-voltage biasing regime, output conductance, transconductance, Nanotecnologia

وصف الملف: 10 p.

Relation: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6825842; Landauer, G.M.; González, J.L.; Jiménez, D. An accurate and Verilog-A compatible compact model for graphene field-effect transistors. "IEEE transactions on nanotechnology", 04 Juny 2014, vol. 13, núm. 5, p. 895-904.; http://hdl.handle.net/2117/24401

الاتاحة: http://hdl.handle.net/2117/24401
https://doi.org/10.1109/TNANO.2014.2328782

المؤلفون: Petrović, Ivan

المساهمون: Matić, Tomislav

مصطلحات موضوعية: TEHNIČKE ZNANOSTI. Elektrotehnika. Elektronika, TECHNICAL SCIENCES. Electrical Engineering. Electronics, Unipolarni tranzistori (tranzistori s efektom polja) - FET, Spojni FET - JFET Metal oxidni FET - MOSFET Izlazna vodljivost d g Strmina m, Unipolar tranzistors (Field effect transistors) - FET Junction FET - JFET Metal oxide semiconductor FET - MOSFET, Output conductance d g Gradient m g

وصف الملف: application/pdf

Relation: https://repozitorij.unios.hr/islandora/object/etfos:626; https://urn.nsk.hr/urn:nbn:hr:200:028669; https://repozitorij.unios.hr/islandora/object/etfos:626/datastream/PDF

الاتاحة: https://repozitorij.unios.hr/islandora/object/etfos:626
https://urn.nsk.hr/urn:nbn:hr:200:028669
https://repozitorij.unios.hr/islandora/object/etfos:626/datastream/PDF