المؤلفون: Ory Maimon, Qiliang Li

المصدر: Materials, Vol 16, Iss 24, p 7693 (2023)

مصطلحات موضوعية: gallium oxide, wide-bandgap semiconductor, field-effect transistors (FETs), high power, RF, defects, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/16/24/7693; https://doaj.org/toc/1996-1944; https://doaj.org/article/963a8b140b2e4e55a7b082e6b81b6d70

الاتاحة: https://doi.org/10.3390/ma16247693
https://doaj.org/article/963a8b140b2e4e55a7b082e6b81b6d70

المؤلفون: Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Curt Richter, Kin Cheung, Sujitra Pookpanratana, Qiliang Li

المصدر: ECS Meeting Abstracts. :2363-2363

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::75bab1b45629c9705e09ad0ba82813cd
https://doi.org/10.1149/ma2022-02642363mtgabs