المؤلفون: Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., Markeev, A. M., Slesazeck, S., Schroeder, U., Mikolajick, T., Krasnikov, G. Y.

المصدر: Acta Materialia

مصطلحات موضوعية: DEFECTS, FERROELECTRIC HF0.5ZR0.5O2, LEAKAGE CURRENTS, LUMINESCENCE, OXYGEN VACANCIES, DATA STORAGE EQUIPMENT, FERROELECTRIC FILMS, FERROELECTRIC THIN FILMS, FERROELECTRICITY, HAFNIUM OXIDES, OXIDES, ZIRCONIUM COMPOUNDS, AB INITIO SIMULATIONS, FERROELECTRIC MEMORY, FERROELECTRIC PROPERTY, FERROELECTRIC RESPONSE, FIELD-INDUCED PHASE TRANSITION, HIGH COERCIVE FIELD, NON-VOLATILE MEMORY, TRANSPORT EXPERIMENTS

وصف الملف: application/pdf

Relation: Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., … Krasnikov, G. Y. (2019). Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. Acta Materialia, 166, 47–55. doi:10.1016/j.actamat.2018.12.008; Final; All Open Access, Green; https://tud.qucosa.de/api/qucosa%3A81148/attachment/ATT-0/; http://elar.urfu.ru/handle/10995/132539; 85058713122; 000459358200005

الاتاحة: http://elar.urfu.ru/handle/10995/132539
https://tud.qucosa.de/api/qucosa%3A81148/attachment/ATT-0/
https://doi.org/10.1016/j.actamat.2018.12.008

المؤلفون: Islamov, Damir R, Chernikova, A G, Kozodaev, M G, Markeev, A M, Perevalov, T V, Gritsenko, V A, Orlov, O M

المصدر: Journal of Physics: Conference Series ; volume 864, page 012002 ; ISSN 1742-6588 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/864/1/012002
http://stacks.iop.org/1742-6596/864/i=1/a=012002/pdf
http://stacks.iop.org/1742-6596/864/i=1/a=012002?key=crossref.85fa68e50f57a46c389705680b772df8

المؤلفون: Islamov, Damir R, Gritsenko, V A, Perevalov, T V, Orlov, O M, Krasnikov, G Ya

المصدر: Journal of Physics: Conference Series ; volume 864, page 012003 ; ISSN 1742-6588 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/864/1/012003
http://stacks.iop.org/1742-6596/864/i=1/a=012003/pdf
http://stacks.iop.org/1742-6596/864/i=1/a=012003?key=crossref.c9a581671b9728843435a22ef35326b8

المؤلفون: Lukichev, Vladimir F., Rudenko, Konstantin V., Orlov, O. M., Popov, A. A., Stepanov, A. A., Sattarov, P. S.

المصدر: Proceedings of SPIE; January 2022, Vol. 12157 Issue: 1 p121570E-121570E-5, 1094136p

المؤلفون: Gritsenko, V. A., Gismatulin, A. A., Orlov, O. M.

المصدر: Nanobiotechnology Reports; November 2021, Vol. 16 Issue: 6 p722-731, 10p

المؤلفون: Orlov, O. M.^1,2 (AUTHOR) oorlov@niime.ru, Gismatulin, A. A.^3,4,5 (AUTHOR), Gritsenko, V. A.^3,4,5 (AUTHOR), Mizginov, D. S.^1,2 (AUTHOR) dmizginov@niime.ru

المصدر: Russian Microelectronics. Sep2020, Vol. 49 Issue 5, p372-377. 6p.

مصطلحات موضوعية: *SILICON nitride, *CHEMICAL vapor deposition, *DIELECTRIC devices, *CHARGE transfer, *SILICON oxide, *MAGNITUDE (Mathematics)

المؤلفون: Kotin, I A, Antonova, I V, Orlov, O M, Smagulova, S A

المساهمون: Russian Foundation for Basic Research

المصدر: Materials Research Express ; volume 3, issue 6, page 066301 ; ISSN 2053-1591

الاتاحة: http://dx.doi.org/10.1088/2053-1591/3/6/066301
http://stacks.iop.org/2053-1591/3/i=6/a=066301/pdf
http://stacks.iop.org/2053-1591/3/i=6/a=066301?key=crossref.7f5cbe063cb4203fe1d9f72d8b54b4b1

المؤلفون: Gritsenko, V. A., Perevalov, T. V., Orlov, O. M., Krasnikov, G. Ya.

المساهمون: Russian Science Foundation

المصدر: Applied Physics Letters ; volume 109, issue 6 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.4959830
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4959830/14099071/062904_1_online.pdf

المؤلفون: Egorov, K. V., Kirtaev, R. V., Lebedinskii, Yu. Yu., Markeev, A. M., Matveyev, Yu. A., Orlov, O. M., Zablotskiy, A. V., Zenkevich, A. V.

المصدر: physica status solidi (a) ; volume 212, issue 4, page 809-816 ; ISSN 1862-6300 1862-6319

الاتاحة: http://dx.doi.org/10.1002/pssa.201431674
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201431674
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201431674

المؤلفون: Smirnov, V K, Kibalov, D S, Orlov, O M, Graboshnikov, V V

المصدر: Nanotechnology ; volume 14, issue 7, page 709-715 ; ISSN 0957-4484 1361-6528

الاتاحة: http://dx.doi.org/10.1088/0957-4484/14/7/304
http://stacks.iop.org/0957-4484/14/i=7/a=304/pdf

المؤلفون: Egorov, K. V., Kirtaev, R. V., Lebedinskii, Yu. Yu., Markeev, A. M., Matveyev, Yu. A., Orlov, O. M., Zablotskiy, A. V., Zenkevich, A. V.

المصدر: Physica Status Solidi. A: Applications & Materials Science; Apr2015, Vol. 212 Issue 4, p809-816, 8p

مصطلحات موضوعية: ATOMIC layer deposition, NONVOLATILE random-access memory, X-ray photoelectron spectroscopy, ELECTROFORMING, METAL insulator semiconductors

المؤلفون: Orlov, O. M., Popov, A. A., Stepanov, A. A., Sattarov, P. S.

المصدر: Proceedings of SPIE; 5/4/2022, Vol. 12157, p121570E-121570E-5, 1p

المؤلفون: Egorov, K. V., Kirtaev, R. V., Lebedinskii, Yu. Yu., Markeev, A. M., Matveyev, Yu. A., Orlov, O. M., Zablotskiy, A. V., Zenkevich, A. V.

المصدر: Physica Status Solidi (A) - Applications and Materials Science; April 2015, Vol. 212 Issue: 4 p809-816, 8p

المؤلفون: Murashev, V. N., Legotin, S. A., Orlov, O. M., Korol'chenko, A. S., Ivshin, P. A.

المصدر: Instruments & Experimental Techniques; Sep2010, Vol. 53 Issue 5, p657-662, 6p, 1 Black and White Photograph, 3 Diagrams, 3 Graphs

مصطلحات موضوعية: DETECTORS, SILICON diodes, ELECTRONIC amplifiers, BIPOLAR transistors, ENGINEERING instruments

المؤلفون: Smirnov, V. K., Kibalov, D. S., Orlov, O. M., Graboshnikov, V. V.

المصدر: Nanotechnology; Jul2003, Vol. 14 Issue 7, p709-715, 7p

مصطلحات موضوعية: NANOSTRUCTURES, AMORPHOUS substances, SILICON, SEMICONDUCTOR doping

المؤلفون: Chvanski, P. P., Gordienko, L. A., Tsinober, L. I., Zinkovskaya, T. N., Polaynski, E. V., Orlov, O. M., Chvanski, P. P., Gordienko, L. A., Tsinober, L. I., Zinkovskaya, T. N., Polaynski, E. V., Orlov, O. M.

المصدر: Journal de Physique IV - Proceedings; June 2005, Vol. 126 Issue: 1 p13-15, 3p

المؤلفون: Kibalov, D. S.¹ IBTec@rambler.ru, Orlov, O. M.¹, Simakin, S. G.¹, Smirnov, V. K.¹

المصدر: Technical Physics Letters. Nov2004, Vol. 30 Issue 11, p897-899. 3p.

مصطلحات موضوعية: *SECONDARY ion mass spectrometry, *ARSENIC, *SILICON, *IONS, *DIFFUSION, *PHYSICS