المؤلفون: Mahaboobbatcha Aleem (11450006), Ramakirshnan Vishnuraj (11450009), Balachander Krishnan (11450012), Biji Pullithadathil (1499611)

مصطلحات موضوعية: Medicine, Biotechnology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, silicon solar cells, investigation also addresses, friendly aluminum paste, commercial ag screen, 420 ° c, cell processing complications, ready strategic process, printed solar cells, could effectively reduce, ∼ 100 nm, ohmic contact formation, cell efficiency enhancement, average cell efficiency, nickel seed layer, based narrow line, 87 μω cm, 2 , seed layer, narrow line, cell performance, printed metallization, metallization process, could exhibit, ∼ 1

Relation: https://figshare.com/articles/journal_contribution/Realization_of_Micropatterned_Narrow_Line-Width_Ni_Cu_Sn_Front_Contact_Grid_Pattern_Using_Maskless_Direct-Write_Lithography_for_Industrial_Silicon_Solar_Cells/16636250

الاتاحة: https://doi.org/10.1021/acsaem.1c01699.s001

المؤلفون: Karaağaç, Hakan, Guller, Ozge, Peksu, Elif, Humali, Eray, Terlemezoğlu, Makbule, Parlak, Mehmet, Islam, Saif

مصطلحات موضوعية: Si Nanowires (NWs) have been commonly fabricated via expensive synthesis processes on particular substrates without some critical features such as mechanical flexibility and optical transparency. Lack of these features limit the applications in their potential research area. In this work, we demonstrated that ordered and disordered single crystalline silicon nanowires can be transferred from Si wafer onto a wide range of alien substrates while preserving their original order and alignment on the mother substrate. Vertically well-aligned Si NWs with different lengths and densities were successfully transferred on Ag-pre-coated glasses, transparent-conductive-oxides and metal foils (Cu), which enable ohmic contact formation between Si NWs and the employed substrates, which is essential for the fabrication of electronics and opto-electronics devices. This approach offers promise to construct low-cost device fabrication with highly crystalline semiconductor materials, which is a crucial step for the realization of next generation highly efficient core-shell solar cells. As an illustrative application, the transferred disordered Si NWs were then decorated with a thin layer of CZTS for the fabrication of a third generation solar cell, which has been exhibited the best power conversion efficiency so far in a device constructed with the same material combination, CZTS thin films, Solar cell, Nanowires

Relation: Karaağaç H., Guller O., Peksu E., Humali E., TERLEMEZOĞLU M., PARLAK M., Islam S., "Transfer of ordered and disordered Si nanowires onto alien substrates for the fabrication of third-generation solar cells", Micro- and Nanotechnology Sensors, Systems, and Applications XI Conference / SPIE Defense and Security Symposium, Maryland, Amerika Birleşik Devletleri, 14 - 18 Nisan 2019, cilt.10982; 85069667198; https://hdl.handle.net/11511/47231; 10982; WOS:000484733200001

الاتاحة: https://hdl.handle.net/11511/47231
https://doi.org/10.1117/12.2518610

المؤلفون: Gómez-Pérez J.F., Correa J.D., Pravda C.B., Kónya Z., Kukovecz Á.

المصدر: Journal of Physical Chemistry C

مصطلحات موضوعية: Black Phosphorus, Calculations, Current voltage characteristics, Electric conductance, Electric resistance, Electronic structure, Ohmic contacts, Oxidation, Oxygen, Phosphorus, Electrical conductance, Electrical resistance measurement, Electrical resistances, Electronic differences, First-principles calculation, Interstitial oxygen, Ohmic contact formation, P type semiconductor, Activation energy

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الاتاحة: http://hdl.handle.net/11407/5934
https://doi.org/10.1021/acs.jpcc.0c06542

المؤلفون: Chhajed, S, Lee, W, Cho, J, Schubert, EF, Kim, JK

المساهمون: 신소재공학과, 10100864, Kim, JK

مصطلحات موضوعية: OHMIC CONTACT FORMATION, EFFICIENCY, SAPPHIRE

Relation: APPLIED PHYSICS LETTERS; 98; SCI급, SCOPUS 등재논문; SCI; Physics, Applied; Physics; 2015-OAK-0000023072; https://oasis.postech.ac.kr/handle/2014.oak/9728; 12001; APPLIED PHYSICS LETTERS, v.98, no.7; 000287507200002; 2-s2.0-79951878137

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/9728
https://doi.org/10.1063/1.3554426

المؤلفون: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ), Khanna, Rohit ( author ), Pearton, S.J. ( author ), Ren, F. ( author ), Kravchenko, I. ( author ), Kao, C.J. ( author ), Chi, G.C. ( author )

مصطلحات موضوعية: Ohmic contact formation, Ti/Al/W 2B/Ti/Au metallization scheme, GaN-based power electronic devices

وصف الملف: Pages 1826-1832

Relation: Applied Surface Science; S0169-4332(05)00589-1; http://ufdc.ufl.edu/LS00515268/00001

الاتاحة: https://doi.org/10.1016/j.apsusc.2005.03.143
http://ufdc.ufl.edu/LS00515268/00001

المؤلفون: Shigeo Fujita, 藤田 茂夫

المصدر: まてりあ / Materia Japan. 1994, 33(6):732

المؤلفون: Nomura, Asuka E

المصدر: Journal of the Microelectronic Engineering Conference

مصطلحات موضوعية: Ohmic Contact Formation, N-Type 6H-SiC, Poly-Si, Silicides, Engineering

وصف الملف: application/pdf

Relation: https://repository.rit.edu/ritamec/vol11/iss1/15; https://repository.rit.edu/context/ritamec/article/1279/viewcontent/Asuka_OhmicContactFormation.pdf

الاتاحة: https://repository.rit.edu/ritamec/vol11/iss1/15
https://repository.rit.edu/context/ritamec/article/1279/viewcontent/Asuka_OhmicContactFormation.pdf

المؤلفون: Stefan Degroote, Gustaaf Borghs, Maarten Kuijk, Ruben Lieten

المساهمون: Laboratorium for Micro- and Photonelectronics, Electronics and Informatics

المصدر: Vrije Universiteit Brussel

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Schottky barrier, Doping, Fermi level, chemistry.chemical_element, Germanium, Metal–semiconductor junction, Metal, symbols.namesake, chemistry, Ohmic contact formation, visual_art, visual_art.visual_art_medium, symbols, Work function, Ohmic contact

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52a33b0af33f026ef463efc5823f7853
https://researchportal.vub.be/en/publications/39c40ced-87e8-4bd1-9c5a-a0c91c3e4ccd