المؤلفون: Park, Kyungchul, Kim, Sungjoon, Oh, Min-Hye, Choi, Woo Young

المساهمون: Choi, Woo Young

مصطلحات موضوعية: Negative membrane potential, Neuron model, Residual membrane potential, Spiking neural network, Threshold variation compensation

Relation: Neurocomputing, Vol.590, p. 127762; https://hdl.handle.net/10371/201629; 001291654600001; 2-s2.0-85192086127; 212610

الاتاحة: https://hdl.handle.net/10371/201629
https://doi.org/10.1016/j.neucom.2024.127762

المؤلفون: Chang, Jeesoo, Oh, Min-Hye, Park, Byung-Gook

المساهمون: Park, Byung-Gook

Relation: 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.81-82; https://hdl.handle.net/10371/186748; 000501001400039; 2-s2.0-85070931974; 173820

الاتاحة: https://hdl.handle.net/10371/186748

المؤلفون: Hwang, Sungmin, Chang, Jeesoo, Oh, Min-Hye, Min, Kyung Kyu, Jang, Taejin, Park, Kyungchul, Yu, Junsu, Lee, Jong-Ho, Park, Byung-Gook

المصدر: Frontiers in Neuroscience ; volume 15 ; ISSN 1662-453X

الاتاحة: http://dx.doi.org/10.3389/fnins.2021.629000
https://www.frontiersin.org/articles/10.3389/fnins.2021.629000/full

المؤلفون: Hwang, Sungmin, Chang, Jeesoo, Oh, Min-Hye, Lee, Jong-Ho, Park, Byung-Gook

المساهمون: Ministry of Science, ICT and Future Planning

المصدر: Scientific Reports ; volume 10, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-020-60572-8
https://www.nature.com/articles/s41598-020-60572-8.pdf
https://www.nature.com/articles/s41598-020-60572-8

المؤلفون: Oh, Min-Hye, Kwon, Min-Woo, Park, Kyungchul, Park, Byung-Gook

المصدر: IEEE Electron Device Letters ; volume 41, issue 10, page 1548-1551 ; ISSN 0741-3106 1558-0563

الاتاحة: https://doi.org/10.1109/led.2020.3016119
http://xplorestaging.ieee.org/ielx7/55/9205824/09165803.pdf?arnumber=9165803

المؤلفون: Oh, Min-Hye, Lee, Kitae, Kim, Sihyun, Park, Byung-Gook

المساهمون: Ministry of Science, ICT and Future Planning, Institute for Information and Communications Technology Promotion, Seoul National University, Korea Ministry of Science and ICT

المصدر: Engineering Applications of Artificial Intelligence ; volume 117, page 105546 ; ISSN 0952-1976

الاتاحة: http://dx.doi.org/10.1016/j.engappai.2022.105546
https://api.elsevier.com/content/article/PII:S095219762200536X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S095219762200536X?httpAccept=text/plain

المؤلفون: Koh, Yul, Yang, Jin-Kyoung, Oh, Min-Hye, Kang, Homan, Lee, Yoon-Sik, Kim, Yong-Kweon

المصدر: RSC Advances ; volume 7, issue 47, page 29679-29685 ; ISSN 2046-2069

الاتاحة: http://dx.doi.org/10.1039/c7ra02460f
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02460F

المؤلفون: Bang, Suhyun, Oh, Min-Hye, Kim, Min-Hwi, Kim, Tae-Hyeon, Lee, Dong Keun, Choi, Yeon-Joon, Kim, Chae Soo, Hong, Kyungho, Cho, Seongjae, Kim, Sungjun, Park, Byung-Gook

المصدر: 2020 International Conference on Electronics, Information, and Communication (ICEIC)

الاتاحة: http://dx.doi.org/10.1109/iceic49074.2020.9051210
http://xplorestaging.ieee.org/ielx7/9040359/9050988/09051210.pdf?arnumber=9051210

المؤلفون: Oh, Min-Hye, Bang, Suhyun, Kwon, Min-Woo, Park, Byung-Gook

المصدر: 2019 Electron Devices Technology and Manufacturing Conference (EDTM)

الاتاحة: http://dx.doi.org/10.1109/edtm.2019.8731336
http://xplorestaging.ieee.org/ielx7/8718786/8731017/08731336.pdf?arnumber=8731336

المؤلفون: Chang, Jeesoo, Oh, Min-Hye, Park, Byung-Gook

المصدر: 2019 Silicon Nanoelectronics Workshop (SNW)

الاتاحة: http://dx.doi.org/10.23919/snw.2019.8782926
http://xplorestaging.ieee.org/ielx7/8778446/8782893/08782926.pdf?arnumber=8782926

المؤلفون: Kang, Homan, Koh, Yul, Jeong, Sinyoung, Jeong, Chulhwan, Cha, Myeong Geun, Oh, Min-Hye, Yang, Jin-Kyoung, Lee, Hyunmi, Jeong, Dae Hong, Jun, Bong-Hyun, Chang, Hyejin, Kim, Yong-Kweon, Lee, Yoon-Sik

المساهمون: Ministry of Health & Welfare, Republic of Korea

المصدر: Sensors and Actuators B: Chemical ; volume 303, page 127211 ; ISSN 0925-4005

الاتاحة: http://dx.doi.org/10.1016/j.snb.2019.127211
https://api.elsevier.com/content/article/PII:S0925400519314108?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925400519314108?httpAccept=text/plain

المؤلفون: Kim, Sihyun, Lee, Kitae, Oh, Min-Hye, Lee, Jong-Ho, Park, Byung-Gook, Kwon, Daewoong

المصدر: IEEE Electron Device Letters; Jun2021, Vol. 42 Issue 6, p816-819, 4p

مصطلحات موضوعية: PHYSICAL mobility, TUNNELS, HAMMING distance, ZIRCONIUM oxide, SEMICONDUCTOR devices, TUNNEL design & construction, TUNNEL lining

المؤلفون: Park, Kyungchul, Kim, Sungjoon, Oh, Min-Hye, Choi, Woo Young

الاتاحة: http://dx.doi.org/10.2139/ssrn.4566657

المؤلفون: Chang, Jeesoo, Hwang, Sungmin, Park, Kyungchul, Jang, Taejin, Min, Kyung-Kyu, Oh, Min-Hye, Park, Jonghyuk, Lee, Jong-Ho, Park, Byung-Gook, Bartolomeo, Antonio Di

المصدر: Applied Sciences (2076-3417); May2021, Vol. 11 Issue 9, p4155, 10p

مصطلحات موضوعية: TUNNEL field-effect transistors, SEARCH algorithms, SEMICONDUCTOR devices, CALIBRATION, FIELD-effect transistors, HUMAN behavior models