المساهمون: Wang, C

المصدر: Conference: OMVPE Workshop, Ponte Verde Beach, FL (US), 05/23/1999--05/27/1999; Other Information: PBD: 23 May 1999

وصف الملف: Medium: P; Size: 18 pages

URL الوصول: http://www.osti.gov/scitech/servlets/purl/754918

المؤلفون: Ciarkowski, Timothy A.

Thesis Advisors: Materials Science and Engineering, Guido, Louis J., Reynolds, William T. Jr., Suchicital, Carlos T. A., Khodaparast, Giti A.

مصطلحات موضوعية: GaN, High Power Electronics, Carbon Contamination, Silicon Doping, OMVPE

وصف الملف: ETD; application/pdf

الاتاحة: http://hdl.handle.net/10919/94551

المساهمون: Steiner, Myles

المصدر: Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Other Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/1251106

المساهمون: Bourret-Courchesne, E

المصدر: Journal of Crystal Growth; 218; 2-4; Other Information: PBD: 5 Jun 2000

وصف الملف: Medium: X; Size: vp.

URL الوصول: http://www.osti.gov/scitech/biblio/771876

المؤلفون: Shi K, Yang AL, Wang J, Song HP, Xu XQ, Sang L, Wei HY, Yang SY, Liu XL, Zhu QS, Wang ZG, Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn, xlliu@semi.ac.cn

مصطلحات موضوعية: Metal Organic Chemical Vapor Deposition, Sapphire, Zinc Compounds, Semiconducting Ii-vi Materials, Vapor-phase Epitaxy, Optical-properties, Zno Nanorods, Raman-scattering, M-plane, Films, Photoluminescence, Deposition, Nanowires, Fields, 半导体材料, aluminum oxide, vapor phase epitaxy, optical properties, raman effect, photography--films, finite volume method, sedimentation, sports facilities, barns, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition)

Relation: JOURNAL OF CRYSTAL GROWTH; Shi K; Yang AL; Wang J; Song HP; Xu XQ; Sang L; Wei HY; Yang SY; Liu XL; Zhu QS; Wang ZG.The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD,JOURNAL OF CRYSTAL GROWTH,2011,314(1):39-42; http://ir.semi.ac.cn/handle/172111/21313

الاتاحة: http://ir.semi.ac.cn/handle/172111/21313

المؤلفون: Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Qiu YX (Qiu Y. X.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn

مصطلحات موضوعية: Ingan, Dislocation, Metalorganic Chemical Vapor Deposition, High Resolution X-ray Diffraction, Cathodoluminescence, Misfit Dislocations, Quantum-wells, Band-gap, Epilayers, Generation, Alloys, Inn, 光电子学, metal organic chemical vapor deposition, electroluminescence, quantum wells, energy bands, reproduction, 位错, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition

Relation: PHYSICA B-CONDENSED MATTER; Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Qiu YX (Qiu Y. X.), Yang H (Yang H.).Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties.PHYSICA B-CONDENSED MATTER,2010,405(22):4668-4672; http://ir.semi.ac.cn/handle/172111/20672

الاتاحة: http://ir.semi.ac.cn/handle/172111/20672

المؤلفون: Lu GJ (Lu Guo-Jun), Zhu JJ (Zhu Jian-Jun), Jiang DS (Jiang De-Sheng), Wang YT (Wang Yu-Tian), Zhao DG (Zhao De-Gang), Liu ZS (Liu Zong-Shun), Zhang SM (Zhang Shu-Ming), Yang H (Yang Hui), Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, Al1-xinxn, Gradual Variation In Composition, Optical Reflectance Spectra, X-ray-diffraction, Phase Epitaxy, Relaxation, Films, Heterostructures, Separation, Dynamics, Alloys, Region, Layers, 光电子学, metal organic chemical vapor deposition, x-ray crystallography, photography--films, finite volume method, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition

Relation: CHINESE PHYSICS B; Lu GJ (Lu Guo-Jun), Zhu JJ (Zhu Jian-Jun), Jiang DS (Jiang De-Sheng), Wang YT (Wang Yu-Tian), Zhao DG (Zhao De-Gang), Liu ZS (Liu Zong-Shun), Zhang SM (Zhang Shu-Ming), Yang H (Yang Hui).Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition.CHINESE PHYSICS B,2010,19(2):Art. No. 026804; http://ir.semi.ac.cn/handle/172111/11180

الاتاحة: http://ir.semi.ac.cn/handle/172111/11180

المؤلفون: Zheng GL, Yang AL, Wei HY, Liu XL, Song HP, Guo, Y, Jia CH, Jiao CM, Yang SY, Zhu QS, Wang ZG, Zheng, GL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: zhenggl@semi.ac.cn, xlliu@semi.ac.cn

مصطلحات موضوعية: Zno, Metal-organic Chemical Vapor Deposition, Infrared Absorption, Surface, Ray Photoelectron-spectroscopy, Polar-surface, Epitaxy, 半导体材料, metal organic chemical vapor deposition, infrared radiation, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition, infra-red rays, infrared rays, radiation, infrared, rays, infrarotstrahlen, rayons infrarouges, 表面

Relation: APPLIED SURFACE SCIENCE; Zheng GL, Yang AL, Wei HY, Liu XL, Song HP, Guo, Y, Jia CH, Jiao CM, Yang SY, Zhu QS, Wang ZG.Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition.APPLIED SURFACE SCIENCE,2010,256(8):2606-2610; http://ir.semi.ac.cn/handle/172111/10206

الاتاحة: http://ir.semi.ac.cn/handle/172111/10206

المؤلفون: Liang S, Zhu HL, Ye XL, Wang W, Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn

مصطلحات موضوعية: Photoluminescence, Metalorganic Vapor Phase Epitaxy, Self-assembled Quantum Dots, Indium Arsenide, 半导体材料, metal organic chemical vapor deposition, 光致发光, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition

Relation: JOURNAL OF CRYSTAL GROWTH; Liang S; Zhu HL; Ye XL; Wang W .Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2009 ,311(8):2281-2284; http://ir.semi.ac.cn/handle/172111/7191

الاتاحة: http://ir.semi.ac.cn/handle/172111/7191

المؤلفون: Yang T, Nishioka M, Arakawa Y, Yang T Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, Quantum Dots, Inas, Gaas, Laser Diodes, 半导体材料, metal organic chemical vapor deposition, gallium arsenide, semiconductor lasers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, dots, quantum, semiconductor quantum dots, antidots, semiconductor, quantum boxes, semiconductor quantum boxes, semiconductor nanocrystals, semiconductor nanoparticles, arseniures de gallium

Relation: JOURNAL OF CRYSTAL GROWTH; Yang T; Nishioka M; Arakawa Y .Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures ,JOURNAL OF CRYSTAL GROWTH,2008 ,310(24):5469-5472; http://ir.semi.ac.cn/handle/172111/7441

الاتاحة: http://ir.semi.ac.cn/handle/172111/7441

المؤلفون: Zhang, PF, Wei, HY, Cong, GW, Hu, WG, Fan, HB, Wu, JJ, Zhu, QS, Liu, XL, Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn

مصطلحات موضوعية: X-ray Diffraction, Metal-organic Chemical Vapor Deposition, Zinc Oxide, Structural Properties, 半导体材料, x-ray crystallography, metal organic chemical vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition)

Relation: THIN SOLID FILMS; Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL .Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition ,THIN SOLID FILMS,2008 ,516(6): 925-928; http://ir.semi.ac.cn/handle/172111/6868

الاتاحة: http://ir.semi.ac.cn/handle/172111/6868

المؤلفون: Liu, B, Zhang, R, Xie, ZL, Xiu, XQ, Li, L, Kong, JY, Yu, HQ, Han, P, Gu, SL, Shi, Y, Zheng, YD, Tang, CG, Chen, YH, Wang, ZG, Zhang, R, Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, X-ray Diffraction, Photoluminescence, 半导体材料, metal organic chemical vapor deposition, x-ray crystallography, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung

Relation: SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY; Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG .The growth temperatures dependence of optical and electrical properties of InN films ,SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,2008 ,51(3): 237-242; http://ir.semi.ac.cn/handle/172111/6818

الاتاحة: http://ir.semi.ac.cn/handle/172111/6818

المؤلفون: Liang S, Zhu HL, Pan JQ, Ye XL, Wang W, Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn

مصطلحات موضوعية: Bimodal Size Distribution, Metalorganic Vapor Phase Epitaxy, Self-assembled Quantum Dots, Indium Arsenide, Phase-epitaxy, Islands, Ingaas, Size, Laser, 光电子学, metal organic chemical vapor deposition, dimensions, lasers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition, isles, islets, atolls, cays, island arcs, keys (islands)

Relation: JOURNAL OF CRYSTAL GROWTH; Liang S; Zhu HL; Pan JQ; Ye XL; Wang W .Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties ,JOURNAL OF CRYSTAL GROWTH,2006,289(2):477-484; http://ir.semi.ac.cn/handle/172111/10736

الاتاحة: http://ir.semi.ac.cn/handle/172111/10736

المؤلفون: Zhao Q, Pan JQ, Zhang J, Wang W, Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China. E-mail: qzhao@red.semi.ac.cn

مصطلحات موضوعية: Selective-area Growth, Ultra-low-pressure, Metal-organic Chemical Vapor Deposition, Tapered Mask, Photoluminescence, Bandgap Energy Control, Integrated Dfb Laser, Epitaxy, 半导体材料, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition, 光致发光, epitaxial growth, solid phase epitaxial growth, solid phase epitaxy, spe

Relation: OPTICAL MATERIALS; Zhao Q; Pan JQ; Zhang J; Wang W .High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD ,OPTICAL MATERIALS,2006,28(8-9):1037-1040; http://ir.semi.ac.cn/handle/172111/10652

الاتاحة: http://ir.semi.ac.cn/handle/172111/10652

المؤلفون: Liu JP (Liu J. P.), Shen GD (Shen G. D.), Zhu JJ (Zhu J. J.), Zhang SM (Zhang S. M.), Jiang DS (Jiang D. S.), Yang H (Yang H.), Liu, JP, Beijing Univ Technol, Beijing Optoelect Technol Lab, Pingleyuan 100, Beijing 100022, Chaoyang Dist, Peoples R China. E-mail: jianpingliu76@hotmail.com

مصطلحات موضوعية: Metal Organic Chemical Vapor Deposition, Violet Light-emitting Diodes, Alingan Quaternary Alloy, Quaternary Alingan Epilayers, Emission, Gan, 光电子学, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, metalorganic chemical vapor deposition, organometallic vapor deposition, emanation, x ray emission

Relation: JOURNAL OF CRYSTAL GROWTH; Liu JP (Liu J. P.); Shen GD (Shen G. D.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Yang H (Yang H.) .Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2006 ,295(1):40370; http://ir.semi.ac.cn/handle/172111/10350

الاتاحة: http://ir.semi.ac.cn/handle/172111/10350

المؤلفون: Zhao, Q, Pan, JQ, Zhou, F, Wang, BJ, Wang, LF, Wang, W, Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: qzhao@red.semi.ac.cn

مصطلحات موضوعية: Movpe, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, omcvd, omvpe

Relation: CHINESE PHYSICS LETTERS; Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W .A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth ,CHINESE PHYSICS LETTERS,AUG 2005,22 (8):2016-2019; http://ir.semi.ac.cn/handle/172111/8592

الاتاحة: http://ir.semi.ac.cn/handle/172111/8592

المؤلفون: Chen, Z, Chua, SJ, Yuan, HR, Liu, XL, Lu, DC, Han, PD, Wang, ZG, Chen, Z, Singapore MIT Alliance, AMMNS, E4-04-10,NUS,4 Engn Dr,3, Singapore 117576, Singapore. 电子邮箱地址: smacz@nus.edu.sg

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, 半导体材料, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition

Relation: JOURNAL OF CRYSTAL GROWTH; Chen, Z; Chua, SJ; Yuan, HR; Liu, XL; Lu, DC; Han, PD; Wang, ZG .Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures ,JOURNAL OF CRYSTAL GROWTH,AUG 1 2004,268 (3-4):504-508; http://ir.semi.ac.cn/handle/172111/8004

الاتاحة: http://ir.semi.ac.cn/handle/172111/8004

المؤلفون: Lu SL, Wang JN, Huang JS, Bian LF, Jiang DS, Yang CL, Dai JM, Ge WK, Wang YQ, Zhang JY, Shen DZ, Lu SL,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Photoluminescence, Metalorganic Chemical Vapor Deposition, Epilayer, Semiconducting Ii-vi Materials, Molecular-beam Epitaxy, Gap, 半导体材料, metal organic chemical vapor deposition, atomic layer deposition, 光致发光, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy

Relation: JOURNAL OF CRYSTAL GROWTH; Lu SL; Wang JN; Huang JS; Bian LF; Jiang DS; Yang CL; Dai JM; Ge WK; Wang YQ; Zhang JY; Shen DZ .The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate ,JOURNAL OF CRYSTAL GROWTH,2003,249 (3-4):538-543; http://ir.semi.ac.cn/handle/172111/11648

الاتاحة: http://ir.semi.ac.cn/handle/172111/11648

المؤلفون: Wang YG, Li W, Han PD, Zhang Z, Wang YG,Chinese Acad Sci,Inst Phys,Beijing Lab Electron Microscopy,POB 603,Beijing 100080,Peoples R China.

مصطلحات موضوعية: Defects, Metalorganic Vapor Phase Epitaxy, Nitrides, Semiconducting Iii-v Materials, Light Emitting Diodes, Light-emitting-diodes, Multiple-quantum Wells, Threading Edge Dislocation, Vapor-phase Epitaxy, N-type Gan, Gallium Nitride, Growth Stoichiometry, Scattering, Luminescence, 半导体材料, metal organic chemical vapor deposition, vapor phase epitaxy, potential scattering, anomalies, defauts, fehler, flaws, imperfections, faults (defects), metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition)

Relation: JOURNAL OF CRYSTAL GROWTH; Wang YG; Li W; Han PD; Zhang Z .Void formation and failure in InGaN/AlGaN double heterostructures ,JOURNAL OF CRYSTAL GROWTH,2003,253 (1-4):404-412; http://ir.semi.ac.cn/handle/172111/11552

الاتاحة: http://ir.semi.ac.cn/handle/172111/11552

المؤلفون: Chen J, Zhang SM, Zhang BS, Zhu JJ, Feng G, Shen XM, Wang YT, Yang H, Zheng WC, Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: In Situ Laser Reflectometry, Lateral Overgrowth, Metalorganic Chemical Vapor Deposition, Gan, Chemical-vapor-deposition, High-quality Gan, Buffer Layer, Threading Dislocations, Temperature, Evolution, Surface, Movpe, 半导体材料, metal organic chemical vapor deposition, chemical vapor deposition, atomic layer deposition, vapor-plating, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, cvd (chemical vapor deposition), deposition

Relation: JOURNAL OF CRYSTAL GROWTH; Chen J; Zhang SM; Zhang BS; Zhu JJ; Feng G; Shen XM; Wang YT; Yang H; Zheng WC .Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate ,JOURNAL OF CRYSTAL GROWTH,2003 ,254 (3-4):348-352; http://ir.semi.ac.cn/handle/172111/11538

الاتاحة: http://ir.semi.ac.cn/handle/172111/11538