المؤلفون: Hai, Joycelyn, Cacho, Florian, Federspiel, Xavier, Garba-Seybou, Tidjani, Divay, Alexis, Lauga-Larroze, Estelle, Arnould, Jean-Daniel

المساهمون: STMicroelectronics Crolles (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)

المصدر: IRPS 2023 - IEEE International Reliability Physics Symposium ; https://hal.science/hal-04105262 ; IRPS 2023 - IEEE International Reliability Physics Symposium, Mar 2023, Monterey, United States. pp.10.1109/IRPS48203.2023.10117885, ⟨10.1109/IRPS48203.2023.10117885⟩ ; https://ieeexplore.ieee.org/document/10117885

مصطلحات موضوعية: degradation mode, dynamic stress, integrated test circuit, off-state reliability, TDDB, PACS 85.42, [SPI.TRON]Engineering Sciences [physics]/Electronics

جغرافية الموضوع: Monterey, United States

الاتاحة: https://hal.science/hal-04105262
https://hal.science/hal-04105262v1/document
https://hal.science/hal-04105262v1/file/Hai_IRPS2023.pdf
https://doi.org/10.1109/IRPS48203.2023.10117885

المؤلفون: Millesimo M., Posthuma N., Bakeroot B., Borga M., Decoutere S., Tallarico A. N.

المساهمون: Millesimo M., Posthuma N., Bakeroot B., Borga M., Decoutere S., Tallarico A.N.

مصطلحات موضوعية: Breakdown mechanism, Field plate, Gallium nitride, Hemt, OFF-state reliability, P-type gate, Time-dependent breakdown

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000628910900008; volume:21; issue:1; firstpage:57; lastpage:63; numberofpages:7; journal:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; https://hdl.handle.net/11585/833392; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85099109490; https://ieeexplore.ieee.org/document/9311207

الاتاحة: https://hdl.handle.net/11585/833392
https://doi.org/10.1109/TDMR.2020.3048274
https://ieeexplore.ieee.org/document/9311207

المؤلفون: J. Hai, F. Cacho, X. Federspiel, T. Garba-Seybou, A. Divay, E. Lauga-Larroze, J.-D. Arnould

المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE

المصدر: IEEE International Reliability Physics Symposium (IRPS 2023)
IEEE International Reliability Physics Symposium (IRPS 2023), Mar 2023, Monterey, United States. ⟨10.1109/IRPS48203.2023.10117885⟩
IEEELink

مصطلحات موضوعية: PACS 85.42, dynamic stress, degradation mode, integrated test circuit, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, off-state reliability, TDDB

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8145e89588fe5b7bf9959ddd9fd9338
https://hal.science/hal-04105262

المؤلفون: Matteo Borga, Niels Posthuma, Benoit Bakeroot, Andrea Natale Tallarico, Stefaan Decoutere, M. Millesimo

المساهمون: Millesimo M., Posthuma N., Bakeroot B., Borga M., Decoutere S., Tallarico A.N.

المصدر: IEEE Transactions on Device and Materials Reliability. 21:57-63

مصطلحات موضوعية: 010302 applied physics, Materials science, Field plate, Condensed matter physics, P-type gate, OFF-state reliability, Wide-bandgap semiconductor, Gallium nitride, 01 natural sciences, Source field, Electronic, Optical and Magnetic Materials, Breakdown mechanism, Stress (mechanics), Barrier layer, chemistry.chemical_compound, chemistry, Time-dependent breakdown, Electric field, 0103 physical sciences, Content (measure theory), Hemt, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Fermi gas

وصف الملف: ELETTRONICO

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d22df640f89269c957e35842086b5cdf
https://doi.org/10.1109/tdmr.2020.3048274

المؤلفون: Millesimo, Maurizio

المساهمون: Tallarico, Andrea Natale, Posthuma, Niels

مصطلحات موضوعية: P-GaN HEMT,power transistor,off-state reliability,Gallium Nitride,TDDB,Breakdown mechanisms,field plate,Semiconductor device reliability, Ingegneria elettronica e telecomunicazioni per l'energia [LM-DM270] - Cesena

وصف الملف: application/pdf

Relation: http://amslaurea.unibo.it/19974/1/Tesi_LM_Maurizio_Millesimo.pdf; Millesimo, Maurizio; Millesimo, Maurizio (2020) OFF-State Reliability of pGaN Power HEMTs. [Laurea magistrale], Università di Bologna, Corso di Studio in Ingegneria elettronica e telecomunicazioni per l'energia [LM-DM270] - Cesena

الاتاحة: http://amslaurea.unibo.it/19974/
http://amslaurea.unibo.it/19974/1/Tesi_LM_Maurizio_Millesimo.pdf

المؤلفون: Millesimo, Maurizio, thesis supervisor: Tallarico, Andrea Natale

مصطلحات الفهرس: P-GaN HEMT,power transistor,off-state reliability,Gallium Nitride,TDDB,Breakdown mechanisms,field plate,Semiconductor device reliability, PeerReviewed, info:eu-repo/semantics/masterThesis

URL: http://amslaurea.unibo.it/19974/
http://amslaurea.unibo.it/19974

المؤلفون: Millesimo, Maurizio, thesis supervisor: Tallarico, Andrea Natale

مصطلحات الفهرس: P-GaN HEMT,power transistor,off-state reliability,Gallium Nitride,TDDB,Breakdown mechanisms,field plate,Semiconductor device reliability, PeerReviewed, info:eu-repo/semantics/masterThesis

URL: http://amslaurea.unibo.it/19974/
http://amslaurea.unibo.it/19974