نتائج البحث - "Nitta, Shugo"

المساهمون: Japan Science and Technology Agency, Japan Society for the Promotion of Science,Japan, Japan Society for the Promotion of Science, QST President's Strategic Grant, Australian Research Council

المصدر: Scientific Reports ; volume 12, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-022-25522-6
https://www.nature.com/articles/s41598-022-25522-6.pdf
https://www.nature.com/articles/s41598-022-25522-6

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5

Academic Journal

Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals

المؤلفون: Nakamura, Daisuke, Iida, Kazuyoshi, Horibuchi, Kayo, Aoki, Yuko, Takahashi, Naoko, Mori, Yuto, Moriyama, Miki, Nitta, Shugo, Amano, Hiroshi

المصدر: Applied Physics Express ; volume 15, issue 4, page 045501 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.35848/1882-0786/ac5ba4
https://iopscience.iop.org/article/10.35848/1882-0786/ac5ba4
https://iopscience.iop.org/article/10.35848/1882-0786/ac5ba4/pdf

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6

Academic Journal

Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

المؤلفون: Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

المصدر: Journal of Crystal Growth ; volume 592, page 126749 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2022.126749
https://api.elsevier.com/content/article/PII:S0022024822002378?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024822002378?httpAccept=text/plain

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7

Academic Journal

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy.

المؤلفون: Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Lu, Shun, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

المصدر: Journal of Applied Physics; 10/14/2022, Vol. 132 Issue 14, p1-8, 8p

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, EPITAXY, FIELD-effect transistors, THERMODYNAMIC equilibrium, GASES, PARTIAL pressure

8

Academic Journal

Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

المؤلفون: Ito, Shin, Sato, Shin-ichiro, Boćkowski, Michał S., Deki, Manato, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Yoshida, Ken-ichi, Minagawa, Hideaki, Hagura, Naoto

المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms ; volume 547, page 165181 ; ISSN 0168-583X

الاتاحة: http://dx.doi.org/10.1016/j.nimb.2023.165181
https://api.elsevier.com/content/article/PII:S0168583X23004226?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0168583X23004226?httpAccept=text/plain

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9

Academic Journal

Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]

المؤلفون: Ohnishi, Kazuki, Kawasaki, Seiya, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

المصدر: Applied Physics Letters ; volume 119, issue 20 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/5.0077364
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0077364/14555834/209901_1_online.pdf

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10

Academic Journal

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

المؤلفون: Tanaka, Atsushi, Nagamatsu, Kentaro, Usami, Shigeyoshi, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Bockowski, Michal, Amano, Hiroshi

Relation: http://repo.lib.tokushima-u.ac.jp/files/public/11/114980/20200720163315605285/aipadv_9_9_095002.pdf; http://repo.lib.tokushima-u.ac.jp/114980

الاتاحة: http://repo.lib.tokushima-u.ac.jp/114980

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11

Academic Journal

State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods

المؤلفون: Evropeitsev, Evgenii A., Kazanov, Dmitrii R., Robin, Yoann, Smirnov, Alexander N., Eliseyev, Ilya A., Davydov, Valery Yu., Toropov, Alexey A., Nitta, Shugo, Shubina, Tatiana V., Amano, Hiroshi

المساهمون: Russian Foundation for Basic Research, Russian Science Foundation

المصدر: Scientific Reports ; volume 10, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-020-76042-0
https://www.nature.com/articles/s41598-020-76042-0.pdf
https://www.nature.com/articles/s41598-020-76042-0

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12

Academic Journal

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

المؤلفون: Liu, Qiang, Fujimoto, Naoki, Shen, Jian, Nitta, Shugo, Tanaka, Atsushi, Honda, Yoshio, Sitar, Zlatko, Boćkowski, Michał, Kumagai, Yoshinao, Amano, Hiroshi

المساهمون: Japan Science and Technology Agency, Ministry of Education, Culture, Sports, Science and Technology

المصدر: Journal of Crystal Growth ; volume 539, page 125643 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2020.125643
https://api.elsevier.com/content/article/PII:S0022024820301664?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024820301664?httpAccept=text/plain

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13

Electronic Resource

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN

المؤلفون: Itoh, Yuta, Watanabe, Hirotaka, Ando, Yuto, Kano, Emi, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Tanaka, Atsushi, Ikarashi, Nobuyuki, Amano, Hiroshi

مصطلحات الفهرس: Journal Article, AM

URL: http://hdl.handle.net/2237/0002002697
https://nagoya.repo.nii.ac.jp/records/2002697
https://nagoya.repo.nii.ac.jp/record/2002697/files/Yuta_ITOH_article_revised.pdf
https://doi.org/10.35848/1882-0786/ac481b
https://doi.org/10.35848/1882-0786/ac481b

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14

Electronic Resource

“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

المؤلفون: Kumabe, Takeru, Watanabe, Hirotaka, Ando, Yuto, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

مصطلحات الفهرس: Journal Article, AM

URL: http://hdl.handle.net/2237/0002003118
https://nagoya.repo.nii.ac.jp/records/2003118
https://nagoya.repo.nii.ac.jp/record/2003118/files/220316_Manuscript-APEX.pdf
https://nagoya.repo.nii.ac.jp/record/2003118/files/220316_SupplementaryData-APEX.pdf
https://doi.org/10.35848/1882-0786/ac6197
https://doi.org/10.35848/1882-0786/ac6197

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15

Electronic Resource

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

المؤلفون: Itoh, Yuta, Lu, Shun, Watanabe, Hirotaka, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Tanaka, Atsushi, Amano, Hiroshi

مصطلحات الفهرس: Journal Article, AM

URL: http://hdl.handle.net/2237/0002004793
https://nagoya.repo.nii.ac.jp/records/2004793
https://nagoya.repo.nii.ac.jp/record/2004793/files/Mg-diffusion_itoh_FULL_version.pdf
https://doi.org/10.35848/1882-0786/ac9c83
https://doi.org/10.35848/1882-0786/ac9c83

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16

Electronic Resource

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

المؤلفون: Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Lu, Shun, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

مصطلحات الفهرس: Journal Article, VoR

URL: http://hdl.handle.net/2237/0002004750
https://nagoya.repo.nii.ac.jp/records/2004750
https://nagoya.repo.nii.ac.jp/record/2004750/files/5_0122292.pdf
https://doi.org/10.1063/5.0122292
https://doi.org/10.1063/5.0122292

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17

Academic Journal

GaN:C 半絶縁層を用いた圧電駆動GaNカンチレバーの共振特性 / Resonance characteristics of piezoelectric GaN cantilever using carbon doped GaN semi-insulating layer

المؤلفون: Amano Hiroshi, Ando Yuto, Deki Manato, Furusawa Yuta, Honda Yoshio, Nitta Shugo, Suda Jun, Takehiro Yamada, Tanaka Atushi, Watanabe Hirotaka, 出来真斗, 古澤優太, 天野浩, 安藤悠人, 山田剛大, 新田州吾, 本田善央, 渡邉浩崇, 田中敦之, 須田淳

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2054

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18

Academic Journal

Time of flight mass spectroscopy analysis of transmetalation between trimethylindium and gallium in N2 and H2

المؤلفون: Amano Hiroshi, Donglin Wu, Hiroshi Amano, Honda Yoshio, Markus Pristovsek, Nitta Shugo, Pristovsek Markus, Shugo Nitta, Ye Zheng, Yoshio Honda, Zheng Ye, 呉東臨

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2034

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19

Academic Journal

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency

المؤلفون: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi

المساهمون: School of Electrical and Electronic Engineering, Temasek Laboratories

مصطلحات موضوعية: Engineering::Electrical and electronic engineering, High-energy α-particle Detection, Low Voltage

وصف الملف: application/pdf

Relation: Sensors; Sandupatla, A., Arulkumaran, S., Ranjan, K., Ng, G. I., Murmu, P. P., Kennedy, J., . . . Amano, H. (2019). Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency. Sensors, 19(23), 5107-. doi:10.3390/s19235107; https://hdl.handle.net/10356/137841; 2-s2.0-85075485545; 23; 19; 11

الاتاحة: https://hdl.handle.net/10356/137841
https://doi.org/10.3390/s19235107

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