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1Book
المؤلفون: Tesfamichael, Tuquabo, Bell, John
المساهمون: Chiao, J, Thiel, D, Dzurak, A, Jagadish, C
المصدر: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE. Vol. 6037.
مصطلحات موضوعية: Microscopic structure, Nitrogen depth profile, Nitrogen ion implantation, Optical properties, Tungsten oxide
وصف الملف: application/pdf
Relation: https://eprints.qut.edu.au/7902/1/7902.pdf; Tesfamichael, Tuquabo & Bell, John (2005) Nitrogen ion implantation and characterization of tungsten oxide films. In Chiao, J, Thiel, D, Dzurak, A, & Jagadish, C (Eds.) Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE. Vol. 6037. SPIE (The International Society for Optical Engineering), United States of America, pp. 1-9.; https://eprints.qut.edu.au/7902/; Faculty of Built Environment and Engineering; Science & Engineering Faculty; Australian Research Centre for Aerospace Automation
الاتاحة: https://eprints.qut.edu.au/7902/
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2Academic Journal
المؤلفون: Mohammadi, Malihe, Akbari, Alireza, Warchomicka, Fernando, Pichon, Luc
المساهمون: Sahand University of Technology (SUT) Tabriz, Iran (SUT), Surface, Interfaces et MAtériaux sous Contrainte Institut Pprime (SIMAC), Département Physique et Mécanique des Matériaux Institut Pprime (Département PMM), Institut Pprime UPR 3346 (PPrime Poitiers ), Université de Poitiers = University of Poitiers (UP)-École Nationale Supérieure de Mécanique et d’Aérotechnique Poitiers (ISAE-ENSMA )-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers = University of Poitiers (UP)-École Nationale Supérieure de Mécanique et d’Aérotechnique Poitiers (ISAE-ENSMA )-Centre National de la Recherche Scientifique (CNRS)-Institut Pprime UPR 3346 (PPrime Poitiers ), Université de Poitiers = University of Poitiers (UP)-École Nationale Supérieure de Mécanique et d’Aérotechnique Poitiers (ISAE-ENSMA )-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers = University of Poitiers (UP)-École Nationale Supérieure de Mécanique et d’Aérotechnique Poitiers (ISAE-ENSMA )-Centre National de la Recherche Scientifique (CNRS)
المصدر: ISSN: 1044-5803 ; Materials Characterization ; https://hal.science/hal-04080668 ; Materials Characterization, 2021, 181, pp.111453. ⟨10.1016/j.matchar.2021.111453⟩.
مصطلحات موضوعية: Gas nitriding, Titanium nitride (TiNx), Ti2N, Diffusion zone, Nitrogen depth profile, X-ray photoelectron spectroscopy (XPS), [SPI]Engineering Sciences [physics]
Relation: hal-04080668; https://hal.science/hal-04080668
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3Book
المؤلفون: Goh, Roland, Waclawik, Eric, Motta, Nunzio, Bell, John
المساهمون: Chiao, J, Thiel, D, Dzurak, A, Jagadish, C
المصدر: Proceedings SPIE Symposium Vol 6037: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
مصطلحات موضوعية: Microstructure, Nitrogen Depth Profile, Nitrogen Ion Implantation, Optical Properties, Tungsten Oxide
Relation: Goh, Roland, Waclawik, Eric, Motta, Nunzio, & Bell, John (2005) Influence of Dispersed Carbon Nanotubes on the Optical and Structural Properties of a Conjugated Polymer. In Chiao, J, Thiel, D, Dzurak, A, & Jagadish, C (Eds.) Proceedings SPIE Symposium Vol 6037: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV. SPIE - International Society for Optical Engineering, CD Rom, pp. 1-7.; https://eprints.qut.edu.au/24287/; Faculty of Built Environment and Engineering; Faculty of Science and Technology; Science & Engineering Faculty; Australian Research Centre for Aerospace Automation
الاتاحة: https://eprints.qut.edu.au/24287/
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4Academic Journal
المؤلفون: Kimura, K, Nakajima, K, Okazaki, Y, Kobayashi, H, Miwa, S, Satori, K
المساهمون: 50127073, 80293885
مصطلحات موضوعية: silicon oxynitride, ultrathin film, nitrogen depth profile, RBS, high-resolution, SIMS, AES
Relation: http://hdl.handle.net/2433/4885; http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=KyotoUniv&SrcApp=KyotoUniv&DestLinkType=FullRecord&KeyUT=ISI:000088910000106&DestApp=WOS; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS; 39; 7B; 4663; 4665
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5
المؤلفون: Hajime Kobayashi, Kaoru Nakajima, Shiro Miwa, Kenji Kimura, Yasutaka Okazaki, Kotaro Satori
المصدر: Scopus-Elsevier
مصطلحات موضوعية: Auger electron spectroscopy, Silicon oxynitride, Materials science, AES, Silicon, Resolution (electron density), General Engineering, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Substrate (electronics), high-resolution, Nitrogen, Spectral line, nitrogen depth profile, chemistry.chemical_compound, chemistry, ultrathin film, Spectroscopy, SIMS, RBS, silicon oxynitride
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6Electronic Resource
المؤلفون: Chiao, J, Thiel, D, Dzurak, A, Jagadish, C, Goh, Roland, Waclawik, Eric, Motta, Nunzio, Bell, John
المصدر: Proceedings SPIE Symposium Vol 6037: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
مصطلحات الفهرس: Microstructure, Nitrogen Depth Profile, Nitrogen Ion Implantation, Optical Properties, Tungsten Oxide, Chapter in Book, Report or Conference volume
URL: doi:10.1117/12.638671
Goh, Roland, Waclawik, Eric, Motta, Nunzio, & Bell, John (2005) Influence of Dispersed Carbon Nanotubes on the Optical and Structural Properties of a Conjugated Polymer. In Chiao, J, Thiel, D, Dzurak, A, & Jagadish, C (Eds.) Proceedings SPIE Symposium Vol 6037: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV. SPIE - International Society for Optical Engineering, CD Rom, pp. 1-7. -
7Electronic Resource
المؤلفون: Chiao, J, Thiel, D, Dzurak, A, Jagadish, C, Tesfamichael, Tuquabo, Bell, John
المصدر: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE.Vol. 6037.
مصطلحات الفهرس: Microscopic structure, Nitrogen depth profile, Nitrogen ion implantation, Optical properties, Tungsten oxide, Chapter in Book, Report or Conference volume
URL:
https://eprints.qut.edu.au/7902/1/7902.pdf https://eprints.qut.edu.au/7902/1/7902.pdf
doi:10.1117/12.640054
Tesfamichael, Tuquabo & Bell, John (2005) Nitrogen ion implantation and characterization of tungsten oxide films. In Chiao, J, Thiel, D, Dzurak, A, & Jagadish, C (Eds.) Device and Process Technologies for Microelectronics, MEMS, and Photonics IV: Proceedings of SPIE.Vol. 6037. SPIE (The International Society for Optical Engineering), United States of America, pp. 1-9. -
8Electronic Resource
المؤلفون: 50127073, 80293885, Kimura, K, Nakajima, K, Okazaki, Y, Kobayashi, H, Miwa, S, Satori, K
مصطلحات الفهرس: silicon oxynitride, ultrathin film, nitrogen depth profile, RBS, high-resolution, SIMS, AES, journal article