المؤلفون: Tamaki, Tomohiro, Inoue, Atsufumi, Furuhashi, Masayuki, Hino, Shiro, Hashimoto, Makoto, Kawase, Mitsuhisa, Sudo, Yohei, Ogawa, Tsutomu, Nishikawa, Kazuyasu

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

الاتاحة: http://dx.doi.org/10.1109/ispsd59661.2024.10579470
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579470.pdf?arnumber=10579470

المؤلفون: Noguchi, Munetaka, Inoue, Atsufumi, Onda, Kohei, Tamaki, Tomohiro, Konishi, Kazuya, Furuhashi, Masayuki, Nishikawa, Kazuyasu

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

الاتاحة: http://dx.doi.org/10.1109/ispsd59661.2024.10579473
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579473.pdf?arnumber=10579473

المؤلفون: Ebihara, Kohei, Niwa, Hiroki, Murakami, Takeshi, Fujiyoshi, Katsuhiro, Nakata, Yosuke, Okimoto, Shigeru, Hatori, Kenji, Nishikawa, Kazuyasu

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

الاتاحة: http://dx.doi.org/10.1109/ispsd59661.2024.10579666
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579666.pdf?arnumber=10579666

المؤلفون: Yuda, Yohei, Ebihara, Kohei, Nanjo, Takuma, Furuhashi, Masayuki, Watahiki, Tatsuro, Nishikawa, Kazuyasu

المصدر: Japanese Journal of Applied Physics ; volume 63, issue 2, page 02SP66 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/ad16bd
https://iopscience.iop.org/article/10.35848/1347-4065/ad16bd
https://iopscience.iop.org/article/10.35848/1347-4065/ad16bd/pdf

المؤلفون: Kawahara, Koutarou, Sugawara, Katsutoshi, Iijima, Akifumi, Hino, Shiro, Fujiyoshi, Katsuhiro, Oritsuki, Yasunori, Murakami, Takeshi, Takahashi, Tetsuo, Kagawa, Yasuhiro, Hironaka, Yoichi, Nishikawa, Kazuyasu

المصدر: Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 360 Issue: 1 p169-175, 7p

المؤلفون: Iijima, Akifumi, Kawahara, Koutarou, Sugawara, Katsutoshi, Hino, Shiro, Fujiyoshi, Katsuhiro, Oritsuki, Yasunori, Murakami, Takeshi, Takahashi, Tetsuo, Kagawa, Yasuhiro, Hironaka, Yoichi, Nishikawa, Kazuyasu

المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

الاتاحة: http://dx.doi.org/10.1109/ispsd57135.2023.10147424
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147424.pdf?arnumber=10147424

المؤلفون: Watanabe, Tomokatsu, Fukui, Yutaka, Hino, Shiro, Tomohisa, Shingo, Miura, Naruhisa, Nishikawa, Kazuyasu

المساهمون: Mitsubishi Electric Corporation

المصدر: IEEE Transactions on Device and Materials Reliability ; volume 23, issue 1, page 99-108 ; ISSN 1530-4388 1558-2574

الاتاحة: http://dx.doi.org/10.1109/tdmr.2023.3234979
http://xplorestaging.ieee.org/ielx7/7298/10063987/10011627.pdf?arnumber=10011627