المؤلفون: Foord, D. T., Newcomb, S. B.

المصدر: Microscopy of Oxidation ; page 374-386 ; ISBN 9781003575825

الاتاحة: http://dx.doi.org/10.1201/9781003575825-41

المؤلفون: Dent, A. H., Newcomb, S. B., Stobbs, W. M.

المصدر: Microscopy of Oxidation ; page 150-161 ; ISBN 9781003575825

الاتاحة: http://dx.doi.org/10.1201/9781003575825-18

المؤلفون: Prangnell, P. B., Newcomb, S. B., Stobbs, W. M.

المصدر: Microscopy of Oxidation ; page 245-251 ; ISBN 9781003422020

الاتاحة: http://dx.doi.org/10.1201/9781003422020-32

المؤلفون: Afanas'ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O'Mahony, A., Povey, I. M., Pemble, M. E., O'Connor, E., Hurley, P. K., Newcomb, S. B.

المساهمون: Povey, Ian M/0000-0002-7877-6664, Povey, Ian/0000-0002-7877-6664, Afanas'ev, Valeri/0000-0001-5018-4539, Hurley, Paul/0000-0001-5137-721X, Brammertz, Guy/0000-0003-1404-7339, Pemble, Martyn/0000-0002-2349-4520

مصطلحات موضوعية: alumina, atomic layer deposition, conduction bands, energy gap, gallium arsenide, hafnium compounds, III-V semiconductors, indium compounds, nanostructured materials, oxidation, photoconductivity, photoemission, semiconductor-insulator boundaries, valence bands, BAND OFFSETS, SEMICONDUCTORS

وصف الملف: application/pdf

Relation: Applied physics letters, 94 (20) (Art N° 202110); http://hdl.handle.net/1942/31648; 20; 94; WOS:000266342800035

الاتاحة: http://hdl.handle.net/1942/31648
https://doi.org/10.1063/1.3137187

المؤلفون: Donohue, H, Buchanan, K, Dunin-Borkowski, R E, Newcomb, S B

المصدر: Microscopy of Semiconducting Materials 2003 ; page 413-416 ; ISBN 9781351074636

الاتاحة: http://dx.doi.org/10.1201/9781351074636-95

المؤلفون: Newcomb, S B

المصدر: Electron Microscopy and Analysis 1997 ; page 289-294 ; ISBN 9781003063056

الاتاحة: http://dx.doi.org/10.1201/9781003063056-75

المؤلفون: O'Dwyer, C., Lavayen, V., Newcomb, S. B., Ana, M. A. Santa, Benavente, E., Gonzalez, G., Torres, C. M. Sotomayor

جغرافية الموضوع: NEW YORK

Relation: instname: Conicyt; reponame: Repositorio Digital RI2.0; info:eu-repo/grantAgreement/Fondecyt/1050344; info:eu-repo/semantics/dataset/hdl.handle.net/10533/93477; https://doi.org/10.1149/1.2746556; 1050344; WOS:000247572100082; https://hdl.handle.net/10533/178393

الاتاحة: https://hdl.handle.net/10533/178393

المؤلفون: Newcomb, S. B.

مصطلحات موضوعية: 669, Metallurgy & metallography

الاتاحة: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.349000

المؤلفون: Newcomb, S. B., Stobbs, W. M., Metcalfe, E.

المصدر: Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1986 Aug . 319(1546), 191-218.

URL الوصول: https://www.jstor.org/stable/37804

المؤلفون: Stobbs, W. M., Newcomb, S. B., Metcalfe, E.

المصدر: Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1986 Aug . 319(1546), 219-247.

URL الوصول: https://www.jstor.org/stable/37805

المؤلفون: Hurley, P. K., O'Connor, E., Monaghan, S., Long, R. D., O'Mahony, A., Povey, I. M., Cherkaoui, K., MacHale, J., Quinn, A. J., BRAMMERTZ, Guy, Heyns, M., Newcomb, S. B., Afanas'ev, V. V., Sonnet, A. M., Galatage, R. V., Jivani, M. N., Vogel, E. M., Wallace, R. M., Pemble, M. E.

المساهمون: Povey, Ian M/0000-0002-7877-6664, heyns, marc/0000-0002-1199-4341, Vogel, Eric M/0000-0002-6110-1361, Wallace, Robert, M./0000-0001-5566-4806, Povey, Ian/0000-0002-7877-6664, Afanas'ev, Valeri/0000-0001-5018-4539, Monaghan, S/0000-0002-9006-9890, Pemble, Martyn/0000-0002-2349-4520, Cherkaoui, Karim/0000-0002-7062-5570, Hurley, Paul/0000-0001-5137-721X, Brammertz, Guy/0000-0003-1404-7339

مصطلحات موضوعية: CAPACITANCE-VOLTAGE CHARACTERIZATION, TEMPERATURE-DEPENDENCE, GATE DIELECTRICS, MOBILITY, GAAS, HFO2, INTERFACE, SI, EXTRACTION, TRANSISTOR

Relation: ECS Transactions; ECS Transactions (Ed.). PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, ELECTROCHEMICAL SOC INC, p. 113 -127; http://hdl.handle.net/1942/31664; 127; 113; WOS:000338086300011

الاتاحة: http://hdl.handle.net/1942/31664
https://doi.org/10.1149/1.3206612

المؤلفون: Fialkov, A. B., Hayhurst, A. N., Taylor, S. G., Newcomb, S. B.

المصدر: Combustion Science and Technology ; volume 185, issue 12, page 1762-1776 ; ISSN 0010-2202 1563-521X

الاتاحة: https://doi.org/10.1080/00102202.2013.833612
http://www.tandfonline.com/doi/pdf/10.1080/00102202.2013.833612

المؤلفون: Toomey, B., Cherkaoui, Karim, Monaghan, Scott, Djara, Vladimir, O'Connor, Éamon, O'Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B., Hurley, Paul K.

مصطلحات موضوعية: ALD, Capacitor, Dynamic random access memory (DRAM), High-k, Metal–insulator–metal (MIM), HfD-04

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/; Toomey, B., Cherkaoui, K., Monaghan, S., Djara, V., O’Connor, É., O’Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B. and Hurley, P. K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications', Microelectronic Engineering, 94, pp. 7-10. doi:10.1016/j.mee.2012.01.001; 10; Microelectronic Engineering; http://hdl.handle.net/10468/13329; 94

الاتاحة: http://hdl.handle.net/10468/13329
https://doi.org/10.1016/j.mee.2012.01.001

المؤلفون: Monaghan, S., O'Mahony, A., Cherkaoui, K., O'Connor, É., Povey, I. M., Nolan, M. G., O'Connell, D., Pemble, M. E., Hurley, P. K., Provenzano, G., Crupi, F., Newcomb, S. B.

مصطلحات موضوعية: Materials Chemistry, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Process Chemistry and Technology, Instrumentation, Electronic, Optical and Magnetic Materials

Relation: url:https://www.openaccessrepository.it/communities/itmirror; https://www.openaccessrepository.it/record/153138

الاتاحة: https://www.openaccessrepository.it/record/153138
https://doi.org/10.1116/1.3532826

المؤلفون: McCarthy, E, Kumar, R T Rajendra, Doggett, B, Chakrabarti, S, Haire, R J O, Newcomb, S B, Mosnier, J.-P, Henry, M O, McGlynn, E

المساهمون: National Centre for Plasma Science & Technology, Dublin City University Dublin (DCU), Department of Physics, Bharathiar University, Department of Electrical Engineering Bombay, Indian Institute of Technology Bombay (IIT Bombay), Glebe Scientific Ltd

المصدر: ISSN: 0022-3727 ; EISSN: 1361-6463.

مصطلحات موضوعية: Physical Sciences

Relation: hal-00654138; https://hal.archives-ouvertes.fr/hal-00654138; https://hal.archives-ouvertes.fr/hal-00654138/document; https://hal.archives-ouvertes.fr/hal-00654138/file/PEER_stage2_10.1088%252F0022-3727%252F44%252F37%252F375401.pdf

الاتاحة: https://hal.archives-ouvertes.fr/hal-00654138
https://hal.archives-ouvertes.fr/hal-00654138/document
https://hal.archives-ouvertes.fr/hal-00654138/file/PEER_stage2_10.1088%252F0022-3727%252F44%252F37%252F375401.pdf
https://doi.org/10.1088/0022-3727/44/37/375401

المؤلفون: Duchamp, M, Boothroyd, C B, Kovács, A, Kadkhodazadeh, S, Kasama, T, Moreno, M S, Aken, B B Van, Barnes, J -P, Veillerot, M, Newcomb, S B, Dunin-Borkowski, R E

المصدر: Journal of Physics: Conference Series ; volume 326, page 012052 ; ISSN 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/326/1/012052
http://stacks.iop.org/1742-6596/326/i=1/a=012052/pdf

المؤلفون: Duchamp, M, Ramar, A, Kovács, A, Kasama, T, Haug, F -J, Newcomb, S B, Ballif, C, Dunin-Borkowski, R E

المصدر: Journal of Physics: Conference Series ; volume 326, page 012057 ; ISSN 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/326/1/012057
http://stacks.iop.org/1742-6596/326/i=1/a=012057/pdf

المؤلفون: Ubaldi, F, Pozzi, G, Kasama, T, McCartney, M R, Newcomb, S B, Dunin-Borkowski, R E

المصدر: Journal of Physics: Conference Series ; volume 209, page 012064 ; ISSN 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/209/1/012064
http://stacks.iop.org/1742-6596/209/i=1/a=012064/pdf

المؤلفون: O’Dwyer, Colm, Lavayen, Vladimir, Fuenzalida, D., Newcomb, S. B., Santa Ana, María Angélica, Benavente Espinosa, Eglantina, González Moraga, Guillermo, Sotomayor Torres, Clivia

وصف الملف: application/pdf

Relation: phys. stat. sol. (b) 244, No. 11, 4157–4160 (2007); http://repositorio.uchile.cl/handle/2250/118404

الاتاحة: http://repositorio.uchile.cl/handle/2250/118404

المؤلفون: Grabowska, J., Nanda, K. K., Rajendra-Kumar, R. T., Mosnier, J. P., Henry, M. O., Newcomb, S. B., McNally, P. J., OReilly, L., Lu, X., McGlynn, E.

المصدر: Superlattices and microstructures 42, 332 (2007). doi:10.1016/j.spmi.2007.04.015

مصطلحات موضوعية: info:eu-repo/classification/ddc/530

جغرافية الموضوع: DE

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000250271200059; info:eu-repo/semantics/altIdentifier/issn/1096-3677; info:eu-repo/semantics/altIdentifier/issn/0749-6036; https://bib-pubdb1.desy.de/record/82682; https://bib-pubdb1.desy.de/search?p=id:%22PHPPUBDB-3958%22

الاتاحة: https://bib-pubdb1.desy.de/record/82682
https://bib-pubdb1.desy.de/search?p=id:%22PHPPUBDB-3958%22