المؤلفون: Etl, C, Ballicchia, M, Nedjalkov, M, Weinbub, J

المساهمون: Austrian Science Fund

المصدر: Journal of Physics A: Mathematical and Theoretical ; volume 57, issue 11, page 115201 ; ISSN 1751-8113 1751-8121

الاتاحة: http://dx.doi.org/10.1088/1751-8121/ad29a8
https://iopscience.iop.org/article/10.1088/1751-8121/ad29a8
https://iopscience.iop.org/article/10.1088/1751-8121/ad29a8/pdf

المؤلفون: Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nunez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., Asenov, A.

المساهمون: University of Glasgow, Department of Neuroscience and Biomedical Engineering, Vienna University of Technology, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: Effective mass, Electron mobility, Kubo-Greenwood Formalism, Nanowire Field-Effect Transistors, One-Dimensional Multi-Subband Scattering Models, Phonons, Quantum Confinement, Scattering, Shape, Silicon, Transistors, Transport Effective Mass

Relation: info:eu-repo/grantAgreement/EC/H2020/688101/EU//SUPERAID7; IEEE Electron Device Letters; Medina-Bailon , C , Sadi , T , Nedjalkov , M , Carrillo-Nunez , H , Lee , J , Badami , O , Georgiev , V , Selberherr , S & Asenov , A 2019 , ' Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism ' , IEEE Electron Device Letters , vol. 40 , no. 10 , pp. 1571-1574 . https://doi.org/10.1109/LED.2019.2934349; PURE UUID: c8c20acb-cc55-4624-8dd3-c6634a148b73; PURE ITEMURL: https://research.aalto.fi/en/publications/c8c20acb-cc55-4624-8dd3-c6634a148b73; PURE LINK: http://www.scopus.com/inward/record.url?scp=85070984570&partnerID=8YFLogxK; PURE LINK: http://eprints.gla.ac.uk/192787/; https://aaltodoc.aalto.fi/handle/123456789/40123; URN:NBN:fi:aalto-201909035165

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/40123
https://doi.org/10.1109/LED.2019.2934349

المؤلفون: Medina-Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.

المساهمون: University of Glasgow, Department of Neuroscience and Biomedical Engineering, Vienna University of Technology, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering

وصف الملف: 1-4; application/pdf

Relation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon; 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; Volume 2018-January; Medina-Bailon , C , Sadi , T , Nedjalkov , M , Lee , J , Berrada , S , Carrillo-Nunez , H , Georgiev , V , Selberherr , S & Asenov , A 2018 , Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors . in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 . vol. 2018-January , IEEE , pp. 1-4 , Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Granada , Spain , 19/03/2018 . https://doi.org/10.1109/ULIS.2018.8354723; PURE UUID: 8c55301c-376d-4f57-8895-8615389fb27c; PURE ITEMURL: https://research.aalto.fi/en/publications/8c55301c-376d-4f57-8895-8615389fb27c; PURE LINK: http://www.scopus.com/inward/record.url?scp=85050942677&partnerID=8YFLogxK; PURE FILEURL: https://research.aalto.fi/files/27537408/SCI_Medina_Bailon_Study_EUROSOI_ULIS_2018_CMedinaBailon.pdf; https://aaltodoc.aalto.fi/handle/123456789/35149; URN:NBN:fi:aalto-201812106164

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/35149
https://doi.org/10.1109/ULIS.2018.8354723

المؤلفون: Ellinghaus, P., Nedjalkov, M., Selberherr, S.

Relation: https://doi.org/10.1109/sispad.2015.7292249; oai:zenodo.org:1280266

الاتاحة: https://doi.org/10.1109/sispad.2015.7292249

المؤلفون: Gurov, T., Atanassov, E., Nedjalkov, M., Dimov, I.

المصدر: Computational Science – ICCS 2007 ; Lecture Notes in Computer Science ; page 739-746 ; ISSN 0302-9743 1611-3349 ; ISBN 9783540725831 9783540725848

الاتاحة: http://dx.doi.org/10.1007/978-3-540-72584-8_98
http://link.springer.com/content/pdf/10.1007/978-3-540-72584-8_98

المؤلفون: Nedjalkov, M., Selberherr, S., Ferry, D.K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., Schwaha, P.

المساهمون: Austrian Science Fund, USA NSF, Bulgarian Science Fund

المصدر: Annals of Physics ; volume 328, page 220-237 ; ISSN 0003-4916

الاتاحة: http://dx.doi.org/10.1016/j.aop.2012.10.001
https://api.elsevier.com/content/article/PII:S0003491612001558?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0003491612001558?httpAccept=text/plain

المؤلفون: VITANOV, P., NEDJALKOV, M.

المصدر: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1991, Vol. 10, Issue 4, pp. 531-538.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/eb051727

المؤلفون: Nedjalkov, M., Vitanov, P.

المصدر: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1991, Vol. 10, Issue 4, pp. 525-530.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/eb051726

المؤلفون: Kosina, H., Nedjalkov, M., Selberherr, S.

المصدر: Lecture Notes in Computer Science ; Large-Scale Scientific Computing ; page 175-182 ; ISSN 0302-9743 1611-3349 ; ISBN 9783540430438 9783540453468

الاتاحة: https://doi.org/10.1007/3-540-45346-6_17
http://link.springer.com/content/pdf/10.1007/3-540-45346-6_17

المؤلفون: Nedjalkov, M., Kosina, H., Selberherr, S., Dimov, I.

المساهمون: European Commission

المصدر: VLSI Design ; volume 13, issue 1-4, page 405-411 ; ISSN 1065-514X 1563-5171

الاتاحة: http://dx.doi.org/10.1155/2001/54247
http://downloads.hindawi.com/archive/2001/054247.pdf
https://onlinelibrary.wiley.com/doi/pdf/10.1155/2001/54247

المؤلفون: Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.

وصف الملف: text

Relation: http://eprints.gla.ac.uk/172320/1/172320.pdf; Medina Bailon, C. , Sadi, T., Nedjalkov, M., Lee, J. , Berrada, S. , Carrillo-Nunez, H. , Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354723 )

الاتاحة: http://eprints.gla.ac.uk/172320/
http://eprints.gla.ac.uk/172320/1/172320.pdf

المؤلفون: Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D. K.

المساهمون: Austrian Science Fund

المصدر: Physical Review B ; volume 99, issue 1 ; ISSN 2469-9950 2469-9969

الاتاحة: http://dx.doi.org/10.1103/physrevb.99.014423
https://link.aps.org/article/10.1103/PhysRevB.99.014423
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.014423/fulltext

المؤلفون: Kosina, H, Klimeck, G, Nedjalkov, M, Selberherr, S

URL الوصول: https://ntrs.nasa.gov/citations/20060040078

المؤلفون: Lorenz, J., Asenov, A., Bär, E., Barraud, S., Millar, C., Nedjalkov, M.

المساهمون: Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), School of Engineering, University of Glasgow, Glasgow, UK, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synopsys Inc., Vienna University of Technology (TU Wien), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016)

المصدر: ECS Transactions
ECS Transactions, 2018, 85 (8), pp.113-124. ⟨10.1149/08508.0113ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2018, 85 (8), pp.113-124. ⟨10.1149/08508.0113ecst⟩

مصطلحات موضوعية: [SPI]Engineering Sciences [physics]

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e3d0aaa6ecd597665030e4ae0169bf22
https://cea.hal.science/cea-02965940

المؤلفون: Lorenz, J., K, Asenov, A., Bär, E., Barraud, S., Millar, C., Nedjalkov, M.

المساهمون: Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), School of Engineering, University of Glasgow, Glasgow, UK, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synopsys Inc., Vienna University of Technology = Technische Universität Wien (TU Wien), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016)

المصدر: ISSN: 1938-5862.

مصطلحات موضوعية: [SPI]Engineering Sciences [physics]

Relation: info:eu-repo/grantAgreement//688101/EU/Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node/SUPERAID7; cea-02965940; https://cea.hal.science/cea-02965940

الاتاحة: https://cea.hal.science/cea-02965940
https://doi.org/10.1149/08508.0113ecst

المؤلفون: Wang, L., Sadi, T., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.

وصف الملف: text

Relation: http://eprints.gla.ac.uk/115415/1/115415.pdf; Wang, L. , Sadi, T. , Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B. , Millar, C. and Asenov, A. (2016) Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs. In: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 56-59. ISBN 9781467386098 (doi:10.1109/ULIS.2016.7440051 )

الاتاحة: http://eprints.gla.ac.uk/115415/
http://eprints.gla.ac.uk/115415/1/115415.pdf

المؤلفون: Dimov, I., Nedjalkov, M., Sellier, J. M., Selberherr, S.

المصدر: Mathematics in Industry ; Progress in Industrial Mathematics at ECMI 2014 ; page 701-707 ; ISSN 1612-3956 2198-3283 ; ISBN 9783319234120 9783319234137

الاتاحة: http://dx.doi.org/10.1007/978-3-319-23413-7_97
http://link.springer.com/content/pdf/10.1007/978-3-319-23413-7_97

المؤلفون: Wang, L., Sadi, T., Nedjalkov, M., Brown, A.R., Alexander, C., Cheng, B., Millar, C., Asenov, A.

المصدر: 2015 International Workshop on Computational Electronics (IWCE) ; page 1-4

الاتاحة: http://dx.doi.org/10.1109/iwce.2015.7301989
http://xplorestaging.ieee.org/ielx7/7294750/7301931/07301989.pdf?arnumber=7301989

المؤلفون: Ellinghaus, P., Nedjalkov, M., Selberherr, S.

المصدر: 2015 International Workshop on Computational Electronics (IWCE) ; page 1-4

الاتاحة: http://dx.doi.org/10.1109/iwce.2015.7301955
http://xplorestaging.ieee.org/ielx7/7294750/7301931/07301955.pdf?arnumber=7301955

المؤلفون: Wang, L., Brown, A. R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.

المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ; page 112-115

الاتاحة: http://dx.doi.org/10.1109/sispad.2015.7292271
http://xplorestaging.ieee.org/ielx7/7274904/7292241/07292271.pdf?arnumber=7292271