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1Academic Journal
المؤلفون: Itoh, T., Naritsuka, S., Fujiwara, Y., Hiramatsu, M., Kasu, M., Koga, K., Kondo, H., Matsumoto, K., Nakatsuka, O., Niitsu, K., 野崎智洋, TOMOHIRO NOZAKI, Ohta, T., Sakai, O., Sato, H., Takeuchi, T., Uchida, G.
Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100804629; oai:t2r2.star.titech.ac.jp:50489136
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2Academic Journal
المؤلفون: Mizuno, Y., Tomita, M., Takakura, H., Iwakawa, M., Kambayashi, D., Maruyama, T., Naritsuka, S.
المساهمون: Ministry of Education, Culture, Sports, Science and Technology
المصدر: Journal of Crystal Growth ; volume 452, page 240-243 ; ISSN 0022-0248
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3Academic Journal
المؤلفون: Sazaki, G., Nada, H., Naritsuka, S.
المساهمون: 18th International Conference of Crystal Growth and Epitaxy, Japan Society of Applied Physics, Japanese Association for Crystal Growth, International Union of Crystallography, Commission of Crystal Growth and Characterization, Doshisha University
المصدر: Progress in Crystal Growth and Characterization of Materials ; volume 62, issue 2, page 41-42 ; ISSN 0960-8974
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4Conference
المؤلفون: Kanbayashi, D., Hishida, T., Tomita, M., Takakura, H., Maruyama, T., Naritsuka, S.
المصدر: 2013 International Conference on Indium Phosphide and Related Materials (IPRM) ; page 1-2
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5Academic Journal
المؤلفون: Yamanaka, K., Naritsuka, S., Kanamoto, K., Mihara, M., Ishii, M.
المصدر: Journal of Applied Physics. 6/1/1987, Vol. 61 Issue 11, p5062. 8p.
مصطلحات موضوعية: *ALUMINUM compounds, *GALLIUM arsenide, *MOLECULAR beam epitaxy
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6Academic Journal
المؤلفون: Mihara, M., Nomura, Y., Mannoh, M., Yamanaka, K., Naritsuka, S., Shinozaki, K., Yuasa, T., Ishii, M.
المصدر: Journal of Applied Physics; May1984, Vol. 55 Issue 10, p3760-3764, 5p
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7Academic JournalDefect-related emissions in photoluminescence spectra of AlxGa1-xAs grown by molecular beam epitaxy.
المؤلفون: Mihara, M., Nomura, Y., Mannoh, M., Yamanaka, K., Naritsuka, S., Shinozaki, K., Yuasa, T., Ishii, M.
المصدر: Journal of Applied Physics; May1984, Vol. 55 Issue 10, p3765-3768, 4p
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8Conference
المؤلفون: Naritsuka, S., Noda, T., Wagai, A., Fujita, S., Ashizawa, Y.
المصدر: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ; page 105-108
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9Conference
المؤلفون: Fujita, S., Naritsuka, S., Noda, T., Wagai, A., Ashizawa, Y.
المصدر: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ; page 302-305
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10Book
المؤلفون: Nishinaga, T., Naritsuka, S.
المصدر: Crystal Growth Technology ; page 55-92 ; ISBN 9780815514534
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11Academic Journal
المؤلفون: Naritsuka, S., Lin, C.H., Uchiyama, S., Maruyama, T.
المصدر: Journal of Crystal Growth ; volume 378, page 303-306 ; ISSN 0022-0248
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12Academic Journal
المؤلفون: Maruyama, T., Sato, K., Mizutani, Y., Tanioku, K., Shiraiwa, T., Naritsuka, S.
المصدر: Journal of Nanoscience and Nanotechnology ; volume 10, issue 6, page 4095-4101 ; ISSN 1533-4880
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13Academic Journal
المؤلفون: Ueda, K., Iijima, Y., Maruyama, T., Naritsuka, S.
المصدر: Journal of Nanoscience and Nanotechnology ; volume 10, issue 6, page 4054-4059 ; ISSN 1533-4880
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14Academic Journal
المؤلفون: Naritsuka, S., Tejima, Y., Fujie, K., Maruyama, T.
المصدر: Journal of Crystal Growth ; volume 310, issue 7-9, page 1642-1646 ; ISSN 0022-0248
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15Academic Journal
المؤلفون: Naritsuka, S., Matsuoka, S., Yamashita, Y., Yamamoto, Y., Maruyama, T.
المصدر: Journal of Crystal Growth ; volume 310, issue 7-9, page 1571-1575 ; ISSN 0022-0248
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16Academic Journal
المؤلفون: Yamamoto, Y., Mori, M., Otsubo, H., Maruyama, T., Naritsuka, S.
المصدر: physica status solidi c ; volume 4, issue 7, page 2326-2329 ; ISSN 1862-6351 1610-1642
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17Academic Journal
المؤلفون: Mizutani, M., Teramae, F., Kobayashi, O., Naritsuka, S., Maruyama, T.
المصدر: physica status solidi c ; volume 3, issue 3, page 659-662 ; ISSN 1862-6351 1610-1642
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18Academic JournalGrowth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy
المؤلفون: Naritsuka, S., Suzuki, T., Saitoh, K., Maruyama, T., Nishinaga, T.
المساهمون: Ministry of Education, Culture, Sports, Science and Technology
المصدر: Journal of Crystal Growth ; volume 276, issue 1-2, page 64-71 ; ISSN 0022-0248
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19Academic Journal
المؤلفون: Suzuki, T., Naritsuka, S., Maruyama, T., Nishinaga, T.
المصدر: Crystal Research and Technology ; volume 38, issue 7-8, page 614-618 ; ISSN 0232-1300 1521-4079
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20Academic Journal
المؤلفون: Naritsuka, S., Kobayashi, O., Mitsuda, K., Nishinaga, T.
المساهمون: Research Foundation for the Electrotechnology of Chubu, Ministry of Education, Culture, Sports, Science and Technology, Kato Foundation for Promotion of Science
المصدر: Journal of Crystal Growth ; volume 254, issue 3-4, page 310-315 ; ISSN 0022-0248