المؤلفون: Hideki Hirakata, Hiroyoshi Fukui, Kazuhisa Saruwatari, Koichiro Gotou, Kunitoshi Iseki, Masahiko Nakamoto, Munemasa Tajiri, Naoyuki Shigyo, Nobuaki Tanaka, Nobuhiko Koga, Norio Shiraishi, Satoru Fujimi, Yuji Yamagata, 中本 雅彦, 井関 邦敏, 古賀 伸彦, 執行 直行, 山方 雄次, 平方 秀樹, 後藤 宏一郎, 猿渡 和久, 田中 信明, 田尻 宗誠, 白石 法雄, 福井 博義, 藤見 惺

المصدر: 人工透析研究会会誌 / Journal of Japanese Society for Dialysis Therapy. 1981, 14(5):231

المؤلفون: Naoyuki SHIGYO, 執行 直之

المصدر: 応用物理 / OYOBUTURI. 1996, 65(12):1276

المؤلفون: Masanori Tsukuda, Kazuo Itou, Shin Ichi Nishizawa, Atsushi Ogura, Y. Numasawa, Munetoshi Fukui, Kiyoshi Takeuchi, Kazuo Tsutsui, Hitoshi Wakabayashi, Hiromichi Ohashi, Masahiro Watanabe, Toshiro Hiramoto, Takuya Saraya, Wataru Saito, Hiroshi Iwai, Shinichi Suzuki, Toshihiko Takakura, Takuya Hoshii, Kuniyuki Kakushima, Kazuyoshi Furukawa, Naoyuki Shigyo, Ichiro Omura

المصدر: IEEE Transactions on Semiconductor Manufacturing. 33:159-165

مصطلحات موضوعية: 0209 industrial biotechnology, Materials science, business.industry, Bipolar junction transistor, 02 engineering and technology, Insulated-gate bipolar transistor, Carrier lifetime, Condensed Matter Physics, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials, 020901 industrial engineering & automation, Test structure, Reverse bias, Optoelectronics, Wafer, Electrical and Electronic Engineering, business, p–n junction, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1b258a5e84ed944cac7514528bd1184b
https://doi.org/10.1109/tsm.2020.2972369

المؤلفون: 渡辺 正裕, Masahiro Watanabe, Naoyuki Shigyo, 星井 拓也, Takuya Hoshii, Kazuyoshi Furukawa, 角嶋 邦之, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, 宗田 伊理也, Iriya Muneta, 若林 整, Hitoshi Wakabayashi, 中島 昭, Akira Nakajima, Shin-ichi Nishizawa, 筒井 一生, Kazuo Tsutsui, Toshiro Hiramoto, 大橋 弘通, Hiromichi Ohashi, 岩井 洋, Hiroshi Iwai

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100861332; oai:t2r2.star.titech.ac.jp:50595109

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100861332

المؤلفون: Takuya Saraya, Kazuyoshi Furukawa, Iriya Muneta, A. Nakajima, Kuniyuki Kakushima, Hiroshi Iwai, Shin Ichi Nishizawa, Katsumi Satoh, Naoyuki Shigyo, Hiromichi Ohashi, Kazuo Tsutsui, Toshiro Hiramoto, Masahiro Watanabe, H. Wakabayashi, Toshihiko Takakura, Takuya Hoshii, Tomoko Matsudai

المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, chemistry.chemical_element, 02 engineering and technology, Carrier lifetime, Insulated-gate bipolar transistor, 01 natural sciences, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electric potential, business, Technology CAD, Scaling, Trench gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e6b18a5f8247ab822458467014a118af
https://doi.org/10.1109/edtm50988.2021.9420922

المؤلفون: 渡辺正裕, Masahiro Watanabe, 執行直之, Naoyuki Shigyo, 星井拓也, Takuya Hoshii, 古川和由, Kazuyoshi Furukawa, 角嶋邦之, Kuniyuki Kakushima, 佐藤克己, Katsumi Satoh, 末代知子, Tomoko Matsudai, 更屋拓哉, Takuya Saraya, 高倉俊彦, Toshihiko Takakura, 伊藤一夫, Kazuo Itou, 福井宗利, Munetoshi Fukui, 鈴木慎一, Shinichi Suzuki, 竹内 潔, Kiyoshi Takeuchi, 宗田伊里也, Iriya Muneta, 若林 整, Hitoshi Wakabayashi, 中島 昭, Akira Nakajima, 西澤伸一, Shin-ichi Nishizawa, 筒井一生, Kazuo Tsutsui, 平本俊郎, Toshiro Hiramoto, 大橋弘通, Hiromichi Ohashi, 岩井洋, Hiroshi Iwai

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100833081; oai:t2r2.star.titech.ac.jp:50542071

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100833081

المؤلفون: Toshihiko Takakura, Takuya Hoshii, Tomoko Matsudai, Ken Takeuchi, Munetoshi Fukui, Takuya Saraya, Iriya Muneta, Hiroshi Iwai, Kazuo Tsutsui, Shinichi Suzuki, Masahiro Watanabe, Kazuo Itou, Kuniyuki Kakushima, Shin Ichi Nishizawa, Hiromichi Ohashi, Toshiro Hiramoto, Naoyuki Shigyo, H. Wakabayashi, Kazuyoshi Furukawa, A. Nakajima, Katsumi Satoh

المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

مصطلحات موضوعية: 010302 applied physics, Mobility model, Materials science, business.industry, Scattering, Bipolar junction transistor, 02 engineering and technology, Insulated-gate bipolar transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Modeling and simulation, 0103 physical sciences, Calibration, Optoelectronics, 0210 nano-technology, business, Technology CAD, Common emitter

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3858d7dc0b79bfedeacd2fa5c8921e89
https://doi.org/10.23919/sispad49475.2020.9241627

المؤلفون: 渡辺 正裕, Masahiro Watanabe, Naoyuki Shigyo, 星井 拓也, Takuya Hoshii, Kazuyoshi Furukawa, 角嶋 邦之, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, 宗田 伊理也, Iriya Muneta, 若林 整, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, 筒井 一生, Kazuo Tsutsui, Toshiro Hiramoto, 大橋 弘通, Hiromichi Ohashi, 岩井 洋, Hiroshi Iwai

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813972; oai:t2r2.star.titech.ac.jp:50506992

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813972

المؤلفون: 星井 拓也, Takuya Hoshii, Kazuyoshi Furukawa, 角嶋 邦之, Kuniyuki Kakushima, 渡辺 正裕, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, 宗田 伊理也, Iriya Muneta, 若林 整, Hitoshi Wakabayashi, Sinichi Nishizawa, 筒井 一生, Kazuo Tsutsui, Toshiro Hiramoto, 大橋 弘通, Hiromichi Ohashi, 岩井 洋, Hiroshi Iwai

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813965; oai:t2r2.star.titech.ac.jp:50506948

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813965

المؤلفون: Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, 角嶋 邦之, Kuniyuki Kakushima, 星井 拓也, Takuya Hoshii, Kazuyoshi Furukawa, 渡辺 正裕, Masahiro Watanabe, Naoyuki Shigyo, 若林 整, Hitoshi Wakabayashi, 筒井 一生, Kazuo Tsutsui, 岩井 洋, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, 大橋 弘通, Hiromichi Ohashi, Toshiro Hiramo

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813973; oai:t2r2.star.titech.ac.jp:50507000

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813973

المؤلفون: Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, 角嶋 邦之, Kuniyuki Kakushima, 星井 拓也, Takuya Hoshii, Kazuyoshi Furukawa, 渡辺 正裕, Masahiro Watanabe, 若林 整, Hitoshi Wakabayashi, 筒井 一生, Kazuo Tsutsui, 岩井 洋, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, 大橋 弘通, Hiromichi Ohashi, Toshiro Hiramoto

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100822931; oai:t2r2.star.titech.ac.jp:50525865

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100822931

المؤلفون: Kazuo Tsutsui, Y. Numasawa, Munetoshi Fukui, Kazuo Itou, Atsushi Ogura, Wataru Saito, Naoyuki Shigyo, Masahiro Watanabe, T. Sarava, Kuniyuki Kakushima, H. Ohash, Kazuyoshi Furukawa, Ken Takeuchi, Ichiro Omura, H. Wakabayashi, Toshihiko Takakura, Takuya Hoshii, Shinichi Suzuki, Masanori Tsukuda, Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Shin Ichi Nishizawa, Hiroshi Iwai

المصدر: ASICON

مصطلحات موضوعية: Physics, Work (thermodynamics), business.industry, Electrical engineering, Insulated-gate bipolar transistor, Current (fluid), business, Scaling, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4b1fec66735b041f8d087cc8e1453400
https://doi.org/10.1109/asicon47005.2019.8983633

المؤلفون: Shinichi Suzuki, Shin Ichi Nishizawa, Kazuo Itou, Y. Numasawa, Kazuo Tsutsui, Masanori Tsukuda, Ichiro Omura, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Masahiro Watanabe, Hiromichi Ohashi, Atsushi Ogura, Toshiro Hiramoto, Hitoshi Wakabayashi, Hiroshi Iwai, Munetoshi Fukui, Kazuyoshi Furukawa, Kiyoshi Takeuchi, Toshihiko Takakura, Takuya Hoshii, Naoyuki Shigyo, Katsumi Satoh, Takuya Saraya

المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

مصطلحات موضوعية: 010302 applied physics, Physics, Condensed matter physics, 020208 electrical & electronic engineering, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Waveform, 02 engineering and technology, Insulated-gate bipolar transistor, Gate voltage, 01 natural sciences, Scaling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2f27f1fdb0647cf6b55dace948dbfd98
https://doi.org/10.1109/ispsd.2019.8757626

المؤلفون: Toshihiro Takakura, Munetoshi Fukui, Katsumi Satoh, Iriya Muneta, Shin Ichi Nishizawa, Hiroshi Iwai, Kazuo Itou, Akira Nakajima, Hiromichi Ohashi, Tomoko Matsudai, Kiyoshi Takeuchi, Toshiro Hiramoto, Naoyuki Shigyo, Kazuyoshi Furukawa, Kuniyuki Kakushima, Takuya Saraya, Takuya Hoshii, Shinichi Suzuki, Kazuo Tsutsui, Masahiro Watanabe, Hitoshi Wakabayashi

المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

مصطلحات موضوعية: 010302 applied physics, Materials science, 020208 electrical & electronic engineering, Design tool, Flow (psychology), Bipolar junction transistor, 02 engineering and technology, Insulated-gate bipolar transistor, 01 natural sciences, Computational physics, Saturation current, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Current (fluid), Scaling, Trench gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3f738bcb9f55a26015b497e4aa802557
https://doi.org/10.1109/ispsd.2019.8757640

المؤلفون: Y. Numasawa, Hiroshi Iwai, Ken Takeuchi, Shinichi Suzuki, Masanori Tsukuda, Munetoshi Fukui, Ichiro Omura, Atsushi Ogura, Kuniyuki Kakushima, Kazuo Itou, Kazuo Tsutsui, Takuya Saraya, Masahiro Watanabe, Toshihiko Takakura, Takuya Hoshii, H. Wakabayashi, Kazuyoshi Furukawa, Naoyuki Shigyo, Hiromichi Ohashi, Toshiro Hiramoto, Shin Ichi Nishizawa

المصدر: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).

مصطلحات موضوعية: 0209 industrial biotechnology, Fabrication, Materials science, Gain measurement, business.industry, Bipolar junction transistor, 02 engineering and technology, Carrier lifetime, Insulated-gate bipolar transistor, 020901 industrial engineering & automation, Test structure, Zero voltage, Optoelectronics, Wafer, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b1a26be5d2ff17a479ba6f1bb16b6ffa
https://doi.org/10.1109/icmts.2019.8730922

المؤلفون: Toshiyuki Enda, Naoyuki Shigyo

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://in4.iue.tuwien.ac.at/pdfs/sispad1997/00621402.pdf.

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.1038.9535; http://in4.iue.tuwien.ac.at/pdfs/sispad1997/00621402.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.1038.9535
http://in4.iue.tuwien.ac.at/pdfs/sispad1997/00621402.pdf

المؤلفون: Atsushi Ogura, Hiromichi Ohashi, Toshiro Hiramoto, Y. Numasawa, Wataru Saito, Shinichi Suzuki, Kazuo Tsutsui, Katsumi Satoh, Masahiro Watanabe, Kuniyuki Kakushima, Kazuo Itou, Ichiro Omura, Masanori Tsukuda, Kiyoshi Takeuchi, Takuya Saraya, Shin Ichi Nishizawa, Hiroshi Iwai, Naoyuki Shigyo, Kazuyoshi Furukawa, Munetoshi Fukui, Tomoko Matsudai, Toshihiko Takakura, Takuya Hoshii

المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, 0209 industrial biotechnology, Materials science, business.industry, Blocking (radio), 02 engineering and technology, Gate voltage, 01 natural sciences, Reduction (complexity), 020901 industrial engineering & automation, 0103 physical sciences, Optoelectronics, business, Scaling, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8aace4b557d3045461a871141cc0bf49
https://doi.org/10.1109/iedm.2018.8614491

المؤلفون: Seiji Yasuda, H. Kawashima, Naoyuki Shigyo

المصدر: Solid-State Electronics. 46:2117-2122

مصطلحات موضوعية: Engineering, Electrostatic discharge, business.industry, Condensed Matter Physics, Salicide, Electronic, Optical and Magnetic Materials, Reliability engineering, Materials Chemistry, Electronic engineering, Breakdown voltage, Electrical and Electronic Engineering, business, Technology CAD, Statistical hypothesis testing, Block (data storage)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4c04928d4389312d78cefc9bda288349
https://doi.org/10.1016/s0038-1101(02)00239-3

المؤلفون: Naoyuki Shigyo

المصدر: IEEE Transactions on Electron Devices. 49:1265-1273

مصطلحات موضوعية: Physics, Analogue electronics, MOSFET, Inversion (meteorology), Electrical and Electronic Engineering, Atomic physics, Circuit modeling, Electronic, Optical and Magnetic Materials, Threshold voltage, Computational physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0de1fcc769667087cafc65fa0576fc1f
https://doi.org/10.1109/ted.2002.1013285

المؤلفون: Naoyuki Shigyo, Hiroshi Nishimura, Hidehiko Yabuhara, Hideichi Kawaguchi, Shigeyuki Takagi, Shigeru Kinoshita

المصدر: Japanese Journal of Applied Physics. 41:1974-1980

مصطلحات موضوعية: Physics and Astronomy (miscellaneous), Chemistry, Scientific method, General Engineering, Calibration, Analytical chemistry, General Physics and Astronomy, High density, Deposition (phase transition), Dielectric, Plasma, Chemical vapor deposition, Ion

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e1da9d2dfded032ddeed935b97a412f8
https://doi.org/10.1143/jjap.41.1974