نتائج البحث - "Nakane, R."

1

Report

Fabrication and characterization of pseudo-spin-MOSFET

المؤلفون: Shuto, Y., Nakane, R., Sukegawa, H., Yamamoto, S., Tanaka, M., Inomata, K., Sugahara, S.

مصطلحات موضوعية: Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/0910.5238

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2

Conference

Experimental demonstration of novel scheme of HZO/Si FeFET reservoir computing with parallel data processing for speech recognition

المؤلفون: Nako, E., Toprasertpong, K., Nakane, R., Takenaka, M., Takagi, S.

المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830412
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830412.pdf?arnumber=9830412

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3

Conference

Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications

المؤلفون: Nako, E., Toprasertpong, K., Nakane, R., Wang, Z., Miyatake, Y., Takenaka, M., Takagi, S.

المصدر: 2020 IEEE Symposium on VLSI Technology

الاتاحة: http://dx.doi.org/10.1109/vlsitechnology18217.2020.9265110
http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265110.pdf?arnumber=9265110

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4

Conference

Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service

المؤلفون: Nakane, R., Shuto, Y., Sukegawa, H., Wen, Z.C., 山本修一郎, Shuichiro Yamamoto, Mitani, S., Tanaka, M., Inomata, K., Sugahara, S.

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100804715; oai:t2r2.star.titech.ac.jp:50489222

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100804715

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5

Conference

Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices

المؤلفون: Shuto, Y., 山本修一郎, Shuichiro Yamamoto, Sukegawa, H., Wen, Z.C., Nakane, R., Mitani, S., Tanaka, M., Inomata, K., Sugahara, S.

Relation: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100804768; oai:t2r2.star.titech.ac.jp:50489275

الاتاحة: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100804768

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6

Academic Journal

Device structures and carrier transport properties of advanced CMOS using high mobility channels

المؤلفون: Takagi, S., Tezuka, T., Irisawa, T., Nakaharai, S., Numata, T., Usuda, K., Sugiyama, N., Shichijo, M., Nakane, R., Sugahara, S.

المساهمون: Ministry of Education, Culture, Sports, Science and Technology, New Energy and Industrial Technology Development Organization

المصدر: Solid-State Electronics ; volume 51, issue 4, page 526-536 ; ISSN 0038-1101

الاتاحة: https://doi.org/10.1016/j.sse.2007.02.017
https://api.elsevier.com/content/article/PII:S0038110107000512?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110107000512?httpAccept=text/plain

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7

Academic Journal

Gate dielectric formation and MIS interface characterization on Ge

المؤلفون: Takagi, S., Maeda, T., Taoka, N., Nishizawa, M., Morita, Y., Ikeda, K., Yamashita, Y., Nishikawa, M., Kumagai, H., Nakane, R., Sugahara, S., Sugiyama, N.

المصدر: Microelectronic Engineering ; volume 84, issue 9-10, page 2314-2319 ; ISSN 0167-9317

الاتاحة: https://doi.org/10.1016/j.mee.2007.04.129
https://api.elsevier.com/content/article/PII:S0167931707005011?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931707005011?httpAccept=text/plain

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8

Conference

Partial Discharge Inception Characteristics in Air with Solid Dielectrics under HVDC and Polarity Reversal Conditions

المؤلفون: Okubo, H., Nakane, R., Okamoto, K.

المصدر: 2018 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP) ; page 481-485

الاتاحة: http://dx.doi.org/10.1109/ceidp.2018.8544779
http://xplorestaging.ieee.org/ielx7/8533542/8544724/08544779.pdf?arnumber=8544779

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9

Academic Journal

Structural and magnetic properties of ferromagnetic Fe1-xSix (0.18 ⩽ x ⩽ 0.33) films formed by rapid thermal annealing on silicon-on-insulator substrates.

المؤلفون: Nakane, R.^1,2, Sugahara, S.³, Tanaka, M.^1,4

المصدر: Journal of Applied Physics. 2015, Vol. 117 Issue 13, p133906-1-133906-10. 10p. 4 Diagrams, 4 Charts, 8 Graphs.

مصطلحات موضوعية: *ANNEALING of metals, *FERROMAGNETIC materials, *IRON, *MAGNETIC properties of metals, *SUBSTRATES (Materials science), *SILICON-on-insulator technology

10

Conference

Electric field distribution with dynamic charge activity in composite insulation systems under HVDC and DC-polarity reversal conditions

المؤلفون: Okubo, H., Nakane, R., Takabayashi, K., Kato, K.

المصدر: 2017 IEEE Conference on Electrical Insulation and Dielectric Phenomenon (CEIDP) ; volume c 3, page 600-604

الاتاحة: http://dx.doi.org/10.1109/ceidp.2017.8257510
http://xplorestaging.ieee.org/ielx7/8240602/8257446/08257510.pdf?arnumber=8257510

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11

Conference

Electrical insulation performance of HVDC-GIS spacer under various testing conditions

المؤلفون: Nakane, R., Takabayashi, K., Kato, K., Okubo, H.

المصدر: 2017 IEEE Conference on Electrical Insulation and Dielectric Phenomenon (CEIDP)

الاتاحة: http://dx.doi.org/10.1109/ceidp.2017.8257461
http://xplorestaging.ieee.org/ielx7/8240602/8257446/08257461.pdf?arnumber=8257461

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12

Conference

Wave-based device scaling concept for brain-like energy efficiency and integration

المؤلفون: Katayama, Y., Yamane, T., Nakano, D., Nakane, R., Tanaka, G.

المصدر: Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15) ; page 23-24

الاتاحة: http://dx.doi.org/10.1109/nanoarch.2015.7180580
http://xplorestaging.ieee.org/ielx7/7164206/7180573/07180580.pdf?arnumber=7180580

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13

Conference

Wave-based neuromorphic computing framework for brain-like energy efficiency and integration

المؤلفون: Katayama, Y., Yamane, T., Nakano, D., Nakane, R., Tanaka, G.

المصدر: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) ; page 1210-1213

الاتاحة: http://dx.doi.org/10.1109/nano.2015.7388846
http://xplorestaging.ieee.org/ielx7/7383413/7388616/07388846.pdf?arnumber=7388846

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14

Academic Journal

Effect of postgrowth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates.

المؤلفون: Nakane, R.¹ nakane@cryst.t.u-tokyo.ac.jp, Sugahara, S.^1,2, Tanaka, M.^1,2 masaaki@ee.t.u-tokyo.ac.jp

المصدر: Journal of Applied Physics. 6/1/2004, Vol. 95 Issue 11, p6558-6561. 4p. 1 Color Photograph, 2 Graphs.

مصطلحات موضوعية: *ANNEALING of metals, *EPITAXY, *TEMPERATURE, *MORPHOLOGY, *MAGNETORESISTANCE, *FILMSTRIPS, *CRYSTALLIZATION

15

Conference

High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si

المؤلفون: Kim, S. H., Ikku, Y., Yokoyama, M., Nakane, R., Li, J., Kao, Y. C., Takenaka, M., Takagi, S.

المصدر: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

الاتاحة: http://dx.doi.org/10.1109/vlsit.2014.6894352
http://xplorestaging.ieee.org/ielx7/6886509/6894335/06894352.pdf?arnumber=6894352

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16

Conference

Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

المؤلفون: Kim, S. H., Yokoyama, M., Nakane, R., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S.

المصدر: 2013 International Conference on Indium Phosphide and Related Materials (IPRM) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/iciprm.2013.6562632
http://xplorestaging.ieee.org/ielx7/6556710/6562559/06562632.pdf?arnumber=6562632

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17

Conference

Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service

المؤلفون: Nakane, R., Shuto, Y., Sukegawa, H., Wen, Z. C., Yamamoto, S., Mitani, S., Tanaka, M., Inomata, K., Sugahara, S.

المصدر: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ; page 272-275

الاتاحة: http://dx.doi.org/10.1109/essderc.2013.6818871
http://xplorestaging.ieee.org/ielx7/6811819/6818804/06818871.pdf?arnumber=6818871

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18

Conference

Sub-60 nm deeply-scaled channel length extremely-thin body In x Ga 1−x As-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

المؤلفون: Kim, S. H., Yokoyama, M., Taoka, N., Nakane, R., Yasuda, T., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

المصدر: 2012 Symposium on VLSI Technology (VLSIT) ; page 177-178

الاتاحة: http://dx.doi.org/10.1109/vlsit.2012.6242519
http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242519.pdf?arnumber=6242519

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19

Conference

Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices

المؤلفون: Shuto, Y., Yamamoto, S., Sukegawa, H., Wen, Z. C., Nakane, R., Mitani, S., Tanaka, M., Inomata, K., Sugahara, S.

المصدر: 2012 International Electron Devices Meeting ; page 29.6.1-29.6.4

الاتاحة: http://dx.doi.org/10.1109/iedm.2012.6479131
http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479131.pdf?arnumber=6479131

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20

Conference

Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

المؤلفون: Kim, S. H., Yokoyama, M., Taoka, N., Nakane, R., Yasuda, T., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

المصدر: 2011 International Electron Devices Meeting ; page 13.4.1-13.4.4

الاتاحة: http://dx.doi.org/10.1109/iedm.2011.6131546
http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131546.pdf?arnumber=6131546

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