المؤلفون: Nakagomi, S.

Thesis Advisors: Martin, J. ; David, M.

الاتاحة: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.756021

المؤلفون: Nakagomi, S., Yokoyama, K., Kokubun, Y.

المصدر: eISSN: 2194-878X

وصف الملف: application/pdf

Relation: https://jsss.copernicus.org/articles/3/231/2014/

الاتاحة: https://doi.org/10.5194/jsss-3-231-2014
https://jsss.copernicus.org/articles/3/231/2014/

المؤلفون: Spetz, A. Lloyd, Nakagomi, S., Wingbrant, H., Andersson, M., Salomonsson, A., Roy, S., Wingqvist, G., Katardjiev, I., Eickhoff, M., Uvdal, K., Yakimova, R.

المصدر: Materials and Manufacturing Processes ; volume 21, issue 3, page 253-256 ; ISSN 1042-6914 1532-2475

الاتاحة: http://dx.doi.org/10.1080/10426910500464495
http://www.tandfonline.com/doi/pdf/10.1080/10426910500464495

المؤلفون: Takeda, M., Mori, F., Yoshida, A., Takamiya, A., Nakagomi, S., Sato, E., Kiyama, H.

المصدر: Diabetologia ; volume 44, issue 8, page 1043-1050 ; ISSN 0012-186X 1432-0428

الاتاحة: http://dx.doi.org/10.1007/s001250100588
http://link.springer.com/content/pdf/10.1007/s001250100588.pdf
http://link.springer.com/article/10.1007/s001250100588/fulltext.html
http://link.springer.com/content/pdf/10.1007/s001250100588

المؤلفون: Lloyd Spetz, A, Nakagomi, S, Wingbrant, H, Andersson, M, Salomonsson, A, Roy, S, Wingqvist, Gunilla, Katardjiev, Ilia, Eickhoff, M, Uvdal, K, Yakimova, R

المصدر: Materials and Manufactoring Processes. 21(3):253-256

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-24780

المؤلفون: Nakagomi, S, Takahashi, M, Kokubun, Y, Unéus, Lars, Savage, S, Wingbrant, Helena, Andersson, M, Lundström, Ingemar, Löfdahl, Mikael, Lloyd-Spets, Anita

المصدر: Materials Science Forum. 457-460:1507-1510

مصطلحات موضوعية: gas sensor, catalytic gate, substrate bias, buried channel, JFET, SIT, high temperature, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48313

المؤلفون: Uneus, L, Nakagomi, S, Linnarsson, M, Janson, M S, Svensson, B G, Yakimova, R, Syvajarvi, M, Henry, A, Janzen, E, Ekedahl, L G, Lunstrom, I, Spetz, A L

المصدر: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS MATERIALS SCIENCE FORUM. :1419-1422

مصطلحات موضوعية: annealing, gas sensors, high temperature, hydrogen diffusion, Schottky diodes

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-63020

المؤلفون: Unéus, Lars, Nakagomi, S, Linnarsson, M, Jensen, Mona, Svensson, BG, Yakimova, Rositsa, Syväjärvi, Mikael, Henry, Anne, Janzén, Erik, Ekedahl, Lars-Gunnar, Lunstrom, I, Lloyd-Spets, Anita

المصدر: Materials Science Forum, Vols.. :1419-1422

مصطلحات موضوعية: annealing, gas sensors, high temperature, hydrogen diffusion, Schottky diodes, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48831

المؤلفون: Nakagomi, S, Shinobu, H, Unéus, Lars, Lundström, Ingemar, Ekedahl, Lars-Gunnar, Yakimova, Rositsa, Syväjärvi, Mikael, Henry, Anne, Janzén, Erik, Lloyd-Spets, Anita

المصدر: Materials Science Forum, Vols.. :1423-1426

مصطلحات موضوعية: epitaxial layers, gas sensors, high temperature, resistance, scattering, Schottky diodes, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48832

المؤلفون: Nakagomi, S., Lloyd-Spets, Anita, Lundström, Ingemar, Tobias, P.

المصدر: IEEE Sensors Journal. 2(5):379-385

مصطلحات موضوعية: Barrier height, Gas sensor, High temperature, Ideality factor, Metal-insulator-silicon carbide (MISiC), TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-46815

المؤلفون: Nakagomi, S

المساهمون: Martin, J, David, M

المصدر: Doctoral thesis, UCL (University College London).

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/1482135/1/Nakagomi_PhDthesis_FinalVersion_19April2016.pdf; https://discovery.ucl.ac.uk/id/eprint/1482135/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/1482135/1/Nakagomi_PhDthesis_FinalVersion_19April2016.pdf
https://discovery.ucl.ac.uk/id/eprint/1482135/

المؤلفون: Tobias, Peter, Nakagomi, S., Baranzahi, Amir, Zhu, R., Lundström, Ingemar, Mårtensson, P., Lloyd Spetz, Anita

المصدر: Silicon Carbide, III-Nitrides and Related Materials, Part Materials Science Forum. :1097-1100

مصطلحات موضوعية: Schottky diodes, gas sensors, barrier height, ideality factor, interfacial layer, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-88128

المؤلفون: Nakagomi, S., Shimizu, S., Yamamoto, T.

المصدر: Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95 ; volume 2, page 171-174

الاتاحة: http://dx.doi.org/10.1109/sensor.1995.721772
http://xplorestaging.ieee.org/ielx4/5818/15527/00721772.pdf?arnumber=721772

المؤلفون: Nakagomi, S., Takahashi, M., Savage, S., Uneus, L., Wingbrant, H., Andersson, M., Lundstrom, I., Lofdahl, M., Spetz, A.L.

المصدر: Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) ; volume 353?356, page 1168-1173

الاتاحة: http://dx.doi.org/10.1109/icsens.2003.1279129
http://xplorestaging.ieee.org/ielx5/8998/28562/01279129.pdf?arnumber=1279129

المؤلفون: Omori, T., Nakagomi, S., Tanaka, H., Asano, H., Hashimoto, K.Y., Yamaguchi, M.

المصدر: 2002 IEEE Ultrasonics Symposium, 2002. Proceedings. ; page 19-23

الاتاحة: http://dx.doi.org/10.1109/ultsym.2002.1193344
http://xplorestaging.ieee.org/ielx5/8480/26730/01193344.pdf?arnumber=1193344

المؤلفون: Ehara, T., Nakagomi, S., Kokubun, Y.

المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ; page 83-84

الاتاحة: http://dx.doi.org/10.1109/isdrs.2001.984444
http://xplorestaging.ieee.org/ielx5/7731/21224/00984444.pdf?arnumber=984444

المؤلفون: Nakagomi, S., Ikeda, M., Kokubun, Y.

المصدر: Sensor Letters ; volume 9, issue 2, page 616-620 ; ISSN 1546-198X 1546-1971

الاتاحة: http://dx.doi.org/10.1166/sl.2011.1575

المؤلفون: Konishi, H., Ogawa, T., Nakagomi, S., Inoue, K., Tohyama, M., Kiyama, H.

المساهمون: Ministry of Education, Culture, Sports, Science and Technology

المصدر: Neuroscience ; volume 169, issue 4, page 1527-1534 ; ISSN 0306-4522

الاتاحة: http://dx.doi.org/10.1016/j.neuroscience.2010.06.030
https://api.elsevier.com/content/article/PII:S0306452210008778?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0306452210008778?httpAccept=text/plain

المؤلفون: Kandasamy, S., Wlodarski, W., Holland, A., Nakagomi, S., Kokubun, Y.

المصدر: Applied Physics Letters ; volume 90, issue 6 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.2450668
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2450668/14367943/064103_1_online.pdf

المؤلفون: Nakagomi, S., Shindo, Y., Kokubun, Y.

المصدر: physica status solidi (a) ; volume 185, issue 1, page 33-38 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/1521-396x(200105)185:1%3C33::aid-pssa33%3E3.0.co%3B2-f
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F1521-396X(200105)185:1%3C33::AID-PSSA33%3E3.0.CO%3B2-F
https://onlinelibrary.wiley.com/doi/full/10.1002/1521-396X(200105)185:1%3C33::AID-PSSA33%3E3.0.CO%3B2-F