المؤلفون: Abhinav, Vishnuram, Naik, Tejas R.

المصدر: IEEE Access ; volume 12, page 121837-121845 ; ISSN 2169-3536

الاتاحة: http://dx.doi.org/10.1109/access.2024.3451956
http://xplorestaging.ieee.org/ielx8/6287639/10380310/10658647.pdf?arnumber=10658647

المؤلفون: Abhinav, Vishnuram, Naik, Tejas R.

المصدر: Japanese Journal of Applied Physics ; ISSN 0021-4922 1347-4065

الاتاحة: https://doi.org/10.35848/1347-4065/adabf0
https://iopscience.iop.org/article/10.35848/1347-4065/adabf0
https://iopscience.iop.org/article/10.35848/1347-4065/adabf0/pdf

المؤلفون: Garg, Manjari, Naik, Tejas R., Pathak, C. S., Nagarajan, S., Rao, V. Ramgopal, Singh, R.

المساهمون: Department of Electronics and Nanoengineering, Indian Institute of Technology Delhi, Indian Institute of Technology Bombay, Aalto-yliopisto, Aalto University

وصف الملف: application/pdf

Relation: Applied Physics Letters; Volume 112, issue 16; Garg, M, Naik, T R, Pathak, C S, Nagarajan, S, Rao, V R & Singh, R 2018, ' Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces ', Applied Physics Letters, vol. 112, no. 16, 163502 . https://doi.org/10.1063/1.5005587; PURE UUID: 77ad2c92-7a32-45cd-8585-5d8bb52e29c0; PURE ITEMURL: https://research.aalto.fi/en/publications/77ad2c92-7a32-45cd-8585-5d8bb52e29c0; PURE LINK: http://www.scopus.com/inward/record.url?scp=85045620243&partnerID=8YFLogxK; PURE FILEURL: https://research.aalto.fi/files/26487539/1.5005587.pdf; https://aaltodoc.aalto.fi/handle/123456789/32816; URN:NBN:fi:aalto-201808014217

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/32816
https://doi.org/10.1063/1.5005587

المؤلفون: Kaushik, Shuchi, Naik, Tejas R, Ravikanth, M, Liao, Che-Hao, Li, Xiaohang, Rao, V Ramgopal, Singh, R

المصدر: Semiconductor Science and Technology ; volume 36, issue 5, page 055001 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/1361-6641/abeb84
https://iopscience.iop.org/article/10.1088/1361-6641/abeb84
https://iopscience.iop.org/article/10.1088/1361-6641/abeb84/pdf

المؤلفون: Zalte, Maruti B., Naik, Tejas R., Alka, A., Ravikanth, M., Rao, V. Ramgopal, Baghini, Maryam Shojaei

المساهمون: Department of Science and Technology (DST), Government of India

المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 11, page 5920-5924 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2021.3111542
http://xplorestaging.ieee.org/ielx7/16/9583611/09546052.pdf?arnumber=9546052

المؤلفون: Kaushik, Shuchi, Naik, Tejas R, Ravikanth, M, Liao, Che-Hao, Li, Xiaohang, Rao, V Ramgopal, Singh, R

المصدر: Semiconductor Science & Technology; May2021, Vol. 36 Issue 5, p1-9, 9p

مصطلحات موضوعية: METALLOPORPHYRINS, KELVIN probe force microscopy, PHOTODETECTORS, SURFACE passivation, PASSIVATION, X-ray photoelectron spectroscopy

المؤلفون: Shinde, Vinit, Naik, Tejas R., Gajarushi, Ashwini, Rao, V. Ramgopal

المصدر: 2016 3rd International Conference on Emerging Electronics (ICEE) ; volume 306, page 1-3

الاتاحة: http://dx.doi.org/10.1109/icemelec.2016.8074586
http://xplorestaging.ieee.org/ielx7/8055054/8074411/08074586.pdf?arnumber=8074586

المؤلفون: Naik, Tejas R., Rao, V. Ramgopal, Ravikanth, M.

المصدر: 2016 IEEE International Nanoelectronics Conference (INEC) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/inec.2016.7589340
http://xplorestaging.ieee.org/ielx7/7580918/7589250/07589340.pdf?arnumber=7589340

المؤلفون: Naik, Tejas R., Pandey, Swapnil, Palaparthy, Vijay, Shelar, Rohan, Rao, V. Ramgopal, Ravikanth, M.

المصدر: 2016 IEEE International Nanoelectronics Conference (INEC) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/inec.2016.7589293
http://xplorestaging.ieee.org/ielx7/7580918/7589250/07589293.pdf?arnumber=7589293

المؤلفون: Naik, Tejas R., Krishnan, Reshma, Kumari, Priyanka, Ravikanth, M., Rao, V. Ramgopal

المصدر: 2016 74th Annual Device Research Conference (DRC) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/drc.2016.7548435
http://xplorestaging.ieee.org/ielx7/7541905/7548277/07548435.pdf?arnumber=7548435

المؤلفون: Naik, Tejas R., Singh, Vibhas, Ravikanth, M., Rao, V Ramgopal

مصطلحات موضوعية: QD Chemistry

Relation: Naik, Tejas R.; Singh, Vibhas; Ravikanth, M.; Rao, V Ramgopal (2016) A vapor phase self-assembly of porphyrin monolayer as a copper diffusion barrier for back-end-of-line CMOS technologies IEEE Transactions on Electron Devices, 63 (5). pp. 2009-2015. ISSN 0018-9383

الاتاحة: http://repository.ias.ac.in/104954/
http://ieeexplore.ieee.org/document/7433994/

المؤلفون: Gajarushi, Ashwini S., Pathan, Dawuth, Naik, Tejas R., Walawalkar, Mrinalini, Ravikanth, M., Kottantharayil, Anil, Rao, V. Ramgopal

المصدر: 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO); 2016, p483-486, 4p

المؤلفون: Rao, V. Ramgopal, Naik, Tejas R., Patkar, Rajul S.

المصدر: 2015 International Conference on Optical MEMS & Nanophotonics (OMN); 2015, p491-494, 4p

المؤلفون: Naik, Tejas R., Naik, Veena R., Sarwade, Nisha P.

المصدر: Applied Mechanics and Materials; October 2011, Vol. 110 Issue: 1 p5380-5383, 4p