المؤلفون: Ha Ni Baek, Gwang Min Sun, Ji suck Kim, Sy Minh Tuan Hoang, Mi Eun Jin, Sung Ho Ahn

المصدر: Nuclear Engineering and Technology, Vol 49, Iss 1, Pp 209-215 (2017)

مصطلحات موضوعية: Fast Neutron, NPT-IGBT, Lattice Defect, Recombination Center, Minority Carrier Lifetime (MCLT), Switching Speed, Nuclear engineering. Atomic power, TK9001-9401

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S1738573316301930; https://doaj.org/toc/1738-5733

URL الوصول: https://doaj.org/article/9275e3e248024253b4e14cd237b84113

المؤلفون: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

المصدر: International Journal of Electrical, Electronic and Communication Sciences, 11.0(6), (2018-06-01)

مصطلحات موضوعية: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center

Relation: https://doi.org/10.5281/zenodo.1317303; https://doi.org/10.5281/zenodo.1317304; oai:zenodo.org:1317304

الاتاحة: https://doi.org/10.5281/zenodo.1317304

المؤلفون: Tania, Shoulin, Saha, Dipraj, Faiza, Fahmida

المساهمون: Das, Avijit, Department of Electrical and Electronic Engineering, BRAC University

مصطلحات موضوعية: Temperature, Transient characteristics, NPT IGBT, Parabolic model

وصف الملف: 75 pages

Relation: ID 12310008; ID 12121123; ID 12121036; http://hdl.handle.net/10361/7734

الاتاحة: http://hdl.handle.net/10361/7734