المؤلفون: Haddou EL Ghazi, Redouane En-nadir, Anouar Jorio, Mohamed A. Basyooni-M. Kabatas

المصدر: Materials, Vol 16, Iss 21, p 6977 (2023)

مصطلحات موضوعية: silicon transistors, NPN-BJTs, emitter-base, proton irradiation, electric performance, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/16/21/6977; https://doaj.org/toc/1996-1944; https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e

الاتاحة: https://doi.org/10.3390/ma16216977
https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e

المؤلفون: El Ghazi, Haddou (author), En-nadir, Redouane (author), Jorio, Anouar (author), Basyooni, Mohamed A. (author)

مصطلحات الفهرس: silicon transistors, NPN-BJTs, emitter-base, proton irradiation, electric performance, journal article

URL: http://resolver.tudelft.nl/uuid:b4f338d6-cdd7-4d7b-87db-df44aa728a0b
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