المؤلفون: Bamford, E., Berntsson, H., Beale, S., Desoysa, L., Dias, J., Hamer-Kiwacz, S., Hind, D., Johnson, N., Loban, A., Molloy, K., Morvan, E., Rombach, I., Selby, A., Thokala, P., Turtle, C., Walters, S., Drummond, A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/210515/1/s13063-024-08013-z.pdf; Bamford, E., Berntsson, H. orcid.org/0000-0002-6285-6985 , Beale, S. et al. (14 more authors) (2024) Flexor Injury Rehabilitation Splint Trial (FIRST): protocol for a pragmatic randomised controlled trial comparing three splints for finger flexor tendon repairs. Trials, 25 (1). 193. ISSN 1745-6215

الاتاحة: https://eprints.whiterose.ac.uk/210515/
https://eprints.whiterose.ac.uk/210515/1/s13063-024-08013-z.pdf

المؤلفون: Gravier-Dumonceau A., Ameli R., Rogemond V., Ruiz A., Joubert B., Muniz-Castrillo S., Vogrig A., Picard G., Ambati A., Benaiteau M., Rulquin F., Ciron J., Deiva K., De Broucker T., Kremer L., Kerschen P., Sellal F., Bouldoires B., Genet R., Biberon J., Bigot A., Duval F., Issa N., Rusu E. -C., Goudot M., Dutray A., Devoize J. L., Hopes L., Kaminsky A. -L., Philbert M., Chanson E., Leblanc A., Morvan E., Andriuta D., Diraison P., Mirebeau G., Derollez C., Bourg V., Bodard Q., Fort C., Grigorashvili-Coin I., Rieul G., Molinier-Tiganas D., Bonnan M., Tchoumi T., Honnorat J., Marignier R.

المساهمون: Gravier-Dumonceau, A., Ameli, R., Rogemond, V., Ruiz, A., Joubert, B., Muniz-Castrillo, S., Vogrig, A., Picard, G., Ambati, A., Benaiteau, M., Rulquin, F., Ciron, J., Deiva, K., De Broucker, T., Kremer, L., Kerschen, P., Sellal, F., Bouldoires, B., Genet, R., Biberon, J., Bigot, A., Duval, F., Issa, N., Rusu, E. -C., Goudot, M., Dutray, A., Devoize, J. L., Hopes, L., Kaminsky, A. -L., Philbert, M., Chanson, E., Leblanc, A., Morvan, E., Andriuta, D., Diraison, P., Mirebeau, G., Derollez, C., Bourg, V., Bodard, Q., Fort, C., Grigorashvili-Coin, I., Rieul, G., Molinier-Tiganas, D., Bonnan, M., Tchoumi, T., Honnorat, J., Marignier, R.

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000751003500021; volume:98; issue:6; firstpage:E653; lastpage:E668; journal:NEUROLOGY; https://hdl.handle.net/11390/1236091; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85123177645

الاتاحة: https://hdl.handle.net/11390/1236091
https://doi.org/10.1212/WNL.0000000000013087

المؤلفون: Fouzi, Y., Morvan, E., Gobil, Y., Morisot, F., Okada, Etienne, Bollaert, Sylvain, Defrance, Nicolas

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 IEMN, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information CEA-LETI, Laboratoire des matériaux et du génie physique LMGP, Plateforme de Caractérisation Multi-Physiques - IEMN PCMP - IEMN, Advanced NanOmeter DEvices - IEMN ANODE - IEMN, Puissance - IEMN PUISSANCE - IEMN

مصطلحات موضوعية: GaN, MIS-HEMT, nonlinear model, power amplifiers

Relation: info:eu-repo/grantAgreement//EU/IPCEI ME/CT/; 2024 19th European Microwave Integrated Circuits Conference (EuMIC); http://hdl.handle.net/20.500.12210/118355

الاتاحة: https://hdl.handle.net/20.500.12210/118355

المؤلفون: Divay, A., Valorge, O., Dubarry, C., Medbouhi, M., Franiatte, R., Mermin, D., Velard, R., Gobil, Y., Morisot, F., Morvan, E., Charlet, I., Lucci, L., Lugo, J., Garros, X.

المصدر: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631451
http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631451.pdf?arnumber=10631451

المؤلفون: Kim, Donghyun, Theodorou, C., Chanuel, A., Gobil, Y., Charles, M., Morvan, E., Woo Lee, Jae, Mouis, M., Ghibaudo, G.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA), Korea University Seoul, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), European Project: 783274,H2020,H2020-ECSEL-2017-2-RIA-two-stage,5G_GaN2(2018), European Project: 871764,SEQUENCE

المصدر: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-03769945 ; Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩ ; https://www.sciencedirect.com/science/article/pii/S0038110122002192.

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/grantAgreement//783274/EU/Advanced RF Transceivers for 5G base stations based on GaN Technology/5G_GaN2; info:eu-repo/grantAgreement//871764/EU/Cryogenic 3D Nanoelectronics -Des approches non conventionnelles pour développer l’électronique cryogénique - DOI 10.3030/871764/SEQUENCE

الاتاحة: https://hal.science/hal-03769945
https://hal.science/hal-03769945v1/document
https://hal.science/hal-03769945v1/file/Kim-SSE2022-Accepted-AuthorVersion.pdf
https://doi.org/10.1016/j.sse.2022.108448

المؤلفون: Goncalves, R., Castaing, N., Richeval, C., Ducint, D., Titier, K., Morvan, E., Grélard, A., Loquet, A., Molimard, M.

المساهمون: Institut National de la Santé et de la Recherche Médicale, Centre National de la Recherche Scientifique, Université de Bordeaux

المصدر: Forensic Science International ; volume 333, page 111215 ; ISSN 0379-0738

الاتاحة: http://dx.doi.org/10.1016/j.forsciint.2022.111215
https://api.elsevier.com/content/article/PII:S0379073822000457?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0379073822000457?httpAccept=text/plain

المؤلفون: Morvan, E.^1,2 (AUTHOR), van der Schaar, J. P.^1,2 (AUTHOR), Visser, M. R.³ (AUTHOR) mv551@cam.ac.uk

المصدر: Journal of High Energy Physics. Aug2024, Vol. 2024 Issue 8, p1-29. 29p.

المؤلفون: Morvan, E, van der Schaar, JP, Visser, MR

مصطلحات موضوعية: 4902 Mathematical Physics, 5107 Particle and High Energy Physics, 49 Mathematical Sciences, 51 Physical Sciences

وصف الملف: text/xml; application/pdf

Relation: https://www.repository.cam.ac.uk/handle/1810/373017

الاتاحة: https://www.repository.cam.ac.uk/handle/1810/373017

المؤلفون: Aalsma, L., Cole, A., Morvan, E., van der Schaar, J. P., Shiu, G.

المصدر: Aalsma , L , Cole , A , Morvan , E , van der Schaar , J P & Shiu , G 2021 , ' Shocks and information exchange in de Sitter space ' , Journal of High Energy Physics , vol. 2021 , no. 10 , 104 . https://doi.org/10.1007/JHEP10(2021)104

وصف الملف: application/pdf

Relation: https://dare.uva.nl/personal/pure/en/publications/shocks-and-information-exchange-in-de-sitter-space(dcfaacf2-07c9-4da7-bcf4-03b8d4983763).html

الاتاحة: https://dare.uva.nl/personal/pure/en/publications/shocks-and-information-exchange-in-de-sitter-space(dcfaacf2-07c9-4da7-bcf4-03b8d4983763).html
https://doi.org/10.1007/JHEP10(2021)104
https://hdl.handle.net/11245.1/dcfaacf2-07c9-4da7-bcf4-03b8d4983763
https://pure.uva.nl/ws/files/69050376/Aalsma2021_Article_ShocksAndInformationExchangeIn.pdf
http://www.scopus.com/inward/record.url?scp=85117347820&partnerID=8YFLogxK

المؤلفون: Morvan, E., Gobil, Y., Morisot, F., Biscarat, J., Charles, M., Lugo, J., Divay, A., Medbouhi, M., Charlet, I., Delprato, J., Scheiblin, P., Rrustemi, B., Giry, A., Serhan, A., Ruel, S., Pimenta-Barros, P., Laulagnet, F., Minoret, S., Anotta, A., Billon, T., Duriez, B.

المصدر: 2023 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45741.2023.10413676
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413676.pdf?arnumber=10413676

المؤلفون: AMANO, HIROSHI, Baines, Y., Beam, E., BORGA, MATTEO, Bouchet, T., Chalker, Paul R, GEURTS, CHARLES - MICHEL LOUIS - MARIE GHISLAIN, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L., Eckardt, Bernd, Egawa, Takashi, Fay, P., Freedsman, Joseph J, Guido, L., Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H., Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R., Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E., Nakajima, A., Narayanan, E. M. S., Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M., Reddy, R., Sun, Min, Thayne, Iain, Torres, A., Trivellin, Nicola, Unni, V., Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J., Xie, J., Yagi, S., Yang, Shu, Youtsey, C., Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao

المساهمون: Amano, Hiroshi, Baines, Y., Beam, E., Borga, Matteo, Bouchet, T., Chalker, Paul R, Geurts, CHARLES - MICHEL LOUIS - MARIE GHISLAIN, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L., Eckardt, Bernd, Egawa, Takashi, Fay, P., Freedsman, Joseph J, Guido, L., Häberlen, Oliver, Haynes, Geoff, Heckel, Thoma, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H., Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Deni, März, Martin, Mccarthy, R., Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E., Nakajima, A., Narayanan, E. M. S., Oliver, Stephen, Palacios, Tomá, Piedra, Daniel, Plissonnier, M., Reddy, R., Sun, Min, Thayne, Iain, Torres, A., Trivellin, Nicola, Unni, V., Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J., Xie, J., Yagi, S., Yang, Shu, Youtsey, C., Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao

مصطلحات موضوعية: GaN, GaN-on-Si, power circuit, Electronic, Optical and Magnetic Material, Condensed Matter Physic, Acoustics and Ultrasonic, Surfaces, Coatings and Films

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000428431700001; volume:51; issue:16; firstpage:163001; journal:JOURNAL OF PHYSICS D. APPLIED PHYSICS; http://hdl.handle.net/11577/3276909; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85045546018; http://iopscience.iop.org/article/10.1088/1361-6463/aaaf9d/pdf

الاتاحة: http://hdl.handle.net/11577/3276909
https://doi.org/10.1088/1361-6463/aaaf9d
http://iopscience.iop.org/article/10.1088/1361-6463/aaaf9d/pdf

المؤلفون: Vandendaele, W., Garros, X., Lorin, T., Morvan, E., Torres, A., Escoffier, R., Jaud, Ma, Plissonnier, M., Gaillard, F.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: IRPS 2018 - 2018 IEEE International Reliability Physics Symposium ; https://cea.hal.science/cea-02185503 ; IRPS 2018 - 2018 IEEE International Reliability Physics Symposium, Mar 2018, Burlingame, United States. pp.4B.2-1-4B.2-6, ⟨10.1109/IRPS.2018.8353580⟩ ; https://ieeexplore.ieee.org/document/8353580

مصطلحات موضوعية: pBTI, GaN on Si, E-mode GaN, AC pBTI, ultrafast pBTI, [SPI]Engineering Sciences [physics], [SPI.MAT]Engineering Sciences [physics]/Materials

جغرافية الموضوع: Burlingame, United States

Relation: cea-02185503; https://cea.hal.science/cea-02185503; https://cea.hal.science/cea-02185503/document; https://cea.hal.science/cea-02185503/file/Vandendaele2018.pdf

الاتاحة: https://cea.hal.science/cea-02185503
https://cea.hal.science/cea-02185503/document
https://cea.hal.science/cea-02185503/file/Vandendaele2018.pdf
https://doi.org/10.1109/IRPS.2018.8353580

المؤلفون: Huet, L., Morvan, E., Sarazin, N., Guerlin, C., Ammar, M., Pocholle, J.-P., Reichel, J., Schwartz, S.

المساهمون: Armandillo, Errico, Karafolas, Nikos, Cugny, Bruno

المصدر: International Conference on Space Optics — ICSO 2012

الاتاحة: http://dx.doi.org/10.1117/12.2309254

المؤلفون: Freivogel, B., Godet, V., Morvan, E., Pedraza, J.F., Rotundo, A.

المصدر: Freivogel , B , Godet , V , Morvan , E , Pedraza , J F & Rotundo , A 2019 , ' Lessons on eternal traversable wormholes in AdS ' , Journal of High Energy Physics , vol. 2019 , no. 7 , 122 . https://doi.org/10.1007/JHEP07(2019)122

وصف الملف: application/pdf

Relation: https://dare.uva.nl/personal/pure/en/publications/lessons-on-eternal-traversable-wormholes-in-ads(2f2df16f-9000-4fb4-828a-dd1c12685bef).html

الاتاحة: https://dare.uva.nl/personal/pure/en/publications/lessons-on-eternal-traversable-wormholes-in-ads(2f2df16f-9000-4fb4-828a-dd1c12685bef).html
https://doi.org/10.1007/JHEP07(2019)122
https://hdl.handle.net/11245.1/2f2df16f-9000-4fb4-828a-dd1c12685bef
https://pure.uva.nl/ws/files/45702827/Freivogel2019_Article_LessonsOnEternalTraversableWor.pdf
http://www.scopus.com/inward/record.url?scp=85069517340&partnerID=8YFLogxK

المؤلفون: MURAOKA, T., SHIMA, T., KAJITANI, T., HOSHINO, N., MORVAN, E., GRELARD, Axelle, DUFOURC, E. J., FUKUSHIMA, T., AKUTAGAWA, T., NABEYA, K., KINBARA, K.

مصطلحات موضوعية: amphiphiles, isomerization, liquid crystals, macrocycles, polymorphisms, Chimie/Matériaux

Relation: https://oskar-bordeaux.fr/handle/20.500.12278/109278

الاتاحة: https://oskar-bordeaux.fr/handle/20.500.12278/109278
https://hdl.handle.net/20.500.12278/109278
https://doi.org/10.1002/asia.201801372

المؤلفون: Valyraki, N., Maillart, E., Pourcher, V., Shor, N., Tran, S., Boudot de la Motte, M., Houillier, C., Domont, F., Morvan, E., Touat, M., Del Mar Amador, M., Aboab, J., Mathon, B., Hesters, A., Vignal-Clermont, C., Dehais, C., Bonnin, S., Lafitte, F., Villain, N., Varnous, S., Gout, O., Eloit, M., Rodriguez, C., Deschamps, R.

المصدر: Revue Neurologique ; volume 179, issue 4, page 361-367 ; ISSN 0035-3787

الاتاحة: http://dx.doi.org/10.1016/j.neurol.2022.06.011
https://api.elsevier.com/content/article/PII:S003537872200741X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S003537872200741X?httpAccept=text/plain

المؤلفون: Morvan, E., Delecroix, B., Quillerou-Grivot, E.

المصدر: Le Travail Humain, 2015 Jan 01. 78(1), 53-65.

URL الوصول: https://www.jstor.org/stable/43574044

المؤلفون: Amano, H., Baines, Y., Beam, E., Borga, Matteo, Bouchet, T., Chalker, Paul R., Charles, M., Chen, Kevin J., Chowdhury, NadiM, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L., Eckardt, Bernd, Egawa, Takashi, Fay, P., Freedsman, Joseph J., Guido, L., Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H., Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R., Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E., Nakajima, A., Narayanan, E.M.S., Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M., Reddy, R., Sun, Min, Thayne, Iain, Torres, A., Trivellin, Nicola, Unni, V., Uren, Michael J., Van Hove, Marleen, Wallis, David J., Wang, J., Xie, J., Yagi, S., Yang, Shu, Youtsey, C., Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao

وصف الملف: text

Relation: http://eprints.gla.ac.uk/170560/1/170560.pdf; Amano, H. et al. (2018) The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics , 51(16), 163001. (doi:10.1088/1361-6463/aaaf9d )

الاتاحة: http://eprints.gla.ac.uk/170560/
http://eprints.gla.ac.uk/170560/1/170560.pdf

المؤلفون: Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E. M. S., Oliver, Stephen, Plissonnier, M, Reddy, R, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min, Zhang, Yuhao

المساهمون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Zhang, Yuhao, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min

المصدر: Zhang, Yuhao

وصف الملف: application/pdf

Relation: https://doi.org/10.1088/1361-6463/aaaf9d; Journal of Physics D: Applied Physics; http://hdl.handle.net/1721.1/115941; Amano, H et al. “The 2018 GaN Power Electronics Roadmap.” Journal of Physics D: Applied Physics 51, 16 (March 2018): 163001 © 2018 IOP Publishing Ltd; orcid:0000-0002-2190-563X; orcid:0000-0002-8104-9097; orcid:0000-0003-4858-8264; orcid:0000-0002-2849-5653

الاتاحة: http://hdl.handle.net/1721.1/115941

المؤلفون: Lehmann, J., Leroux, C., Charles, M., Torres, A., Morvan, E., Reimbold, G., Bano, Edwige, Ghibaudo, G.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS), European Project: 325630,EC:FP7:SP1-JTI,ENIAC-2012-2,AGATE(2013)

المصدر: 2015 ISPSD Proceedings
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD)
https://hal.science/hal-02009897
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩

مصطلحات موضوعية: power transistors, epitaxy, fluorine, Ron, AlGaN/GaN HeMT, [SPI.MAT]Engineering Sciences [physics]/Materials, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph]

جغرافية الموضوع: Hong Kong, China

Relation: info:eu-repo/grantAgreement/EC/FP7/325630/EU/DEVELOPMENT OF ADVANCED GAN TECHNOLOGIES/AGATE; hal-02009897; https://hal.science/hal-02009897

الاتاحة: https://hal.science/hal-02009897
https://doi.org/10.1109/ISPSD.2015.7123439