المؤلفون: Chaturvedi, Mayank, Haasmann, Daniel, Moghadam, Hamid Amini, Dimitrijev, Sima

مصطلحات موضوعية: Built environment and design, Engineering, Physical sciences, Science & Technology, Technology, Energy & Fuels, 4H-SiC, interface traps

Relation: Energies; Chaturvedi, M; Haasmann, D; Moghadam, HA; Dimitrijev, S, Electrically Active Defects in SiC Power MOSFETs, Energies, 2023, 16 (4), pp. 1771; http://hdl.handle.net/10072/425381

الاتاحة: http://hdl.handle.net/10072/425381
https://doi.org/10.3390/en16041771

المؤلفون: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh

مصطلحات موضوعية: Nanotechnology, Engineering, Industrial electronics, Microelectronics, Power electronics, Compound semiconductors, Electrical engineering, Nanoscale characterisation

Relation: Scientific Reports; Chaturvedi, M; Dimitrijev, S; Haasmann, D; Moghadam, HA; Pande, P; Jadli, U, Quantified density of performance-degrading near-interface traps in SiC MOSFET., Scientific Reports, 2022, 12 (1), pp. 4076; http://hdl.handle.net/10072/413152

الاتاحة: http://hdl.handle.net/10072/413152
https://doi.org/10.1038/s41598-022-08014-5

المؤلفون: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh

مصطلحات موضوعية: Nanotechnology, Power electronics, Microelectronics, Industrial electronics, Compound semiconductors, Engineering, Electrical engineering, Nanoscale characterisation, Electronics, sensors and digital hardware

Relation: IEEE Transactions on Electron Devices; Chaturvedi, M; Dimitrijev, S; Haasmann, D; Moghadam, HA; Pande, P; Jadli, U, Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps, IEEE Transactions on Electron Devices, 2022; http://hdl.handle.net/10072/418721

الاتاحة: http://hdl.handle.net/10072/418721
https://doi.org/10.1109/ted.2022.3206184

المؤلفون: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh

مصطلحات موضوعية: Nanotechnology, Power electronics, Compound semiconductors, Industrial electronics, Microelectronics, Engineering, Electrical engineering, Nanoscale characterisation, Electronics, sensors and digital hardware, Science & Technology, Technology, Physical Sciences, Computer Science, Information Systems, Electrical & Electronic

Relation: Electronics; Chaturvedi, M; Dimitrijev, S; Haasmann, D; Moghadam, HA; Pande, P; Jadli, U, A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs, Electronics, 2022, 11 (9), pp. 1433; http://hdl.handle.net/10072/415024

الاتاحة: http://hdl.handle.net/10072/415024
https://doi.org/10.3390/electronics11091433

المؤلفون: Chaturvedi, Mayank, Dimitrijev, Sima, Moghadam, Hamid Amini, Haasmann, Daniel, Pande, Peyush, Jadli, Utkarsh

مصطلحات موضوعية: Engineering, Electrical engineering, Other engineering, Industrial electronics, Microelectronics, Nanotechnology, Power electronics, Compound semiconductors, Nanoscale characterisation, Information and computing sciences, Science & Technology, Telecommunications, Information Systems

Relation: IEEE Access; Chaturvedi, M; Dimitrijev, S; Moghadam, HA; Haasmann, D; Pande, P; Jadli, U, Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method, IEEE Access, 2021, 9, pp. 109745-109753; http://hdl.handle.net/10072/407146

الاتاحة: http://hdl.handle.net/10072/407146
https://doi.org/10.1109/ACCESS.2021.3102614

المؤلفون: Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Pande, Peyush, Chaturvedi, Mayank, Dimitrijev, Sima

مصطلحات موضوعية: Electrical engineering, Electronics, sensors and digital hardware

Relation: Electronics; Jadli, U; Mohd-Yasin, F; Moghadam, HA; Pande, P; Chaturvedi, M; Dimitrijev, S, Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE, Electronics, 10 (2), pp. 130; http://hdl.handle.net/10072/401343

الاتاحة: http://hdl.handle.net/10072/401343
https://doi.org/10.3390/electronics10020130

المؤلفون: Nguyen, Hong Quan, Dinh, Toan, Moghadam, Hamid Amini, Nguyen, Tuan Khoa, Nguyen, Thanh, Han, Jisheng, Dimitrijev, Sima, Zhu, Yong, Nguyen, Nam-Trung, Dao, Dzung Viet

مصطلحات موضوعية: Electronics, sensors and digital hardware, Nanomaterials, Physical sciences, Engineering

Relation: IEEE Transactions on Electron Devices; Nguyen, HQ; Dinh, T; Moghadam, HA; Nguyen, TK; Nguyen, T; Han, J; Dimitrijev, S; Zhu, Y; Nguyen, N-T; Dao, DV, AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing, IEEE Transactions on Electron Devices, 2021, pp. 1-6; http://hdl.handle.net/10072/402964

الاتاحة: http://hdl.handle.net/10072/402964
https://doi.org/10.1109/ted.2021.3054360

المؤلفون: Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Pande, Peyush, Chaturvedi, Mayank, Dimitrijev, Sima

مصطلحات موضوعية: Nanotechnology, Electrical engineering, Engineering, Industrial electronics, Microelectronics, Compound semiconductors, Power electronics, Electronics, sensors and digital hardware

Relation: Electronics; Jadli, U; Mohd-Yasin, F; Moghadam, HA; Pande, P; Chaturvedi, M; Dimitrijev, S, A Method for Selection of Power MOSFETs to Minimize Power Dissipation, Electronics, 10 (17), pp. 2150; http://hdl.handle.net/10072/408076

الاتاحة: http://hdl.handle.net/10072/408076
https://doi.org/10.3390/electronics10172150

المؤلفون: Pande, Peyush, Haasmann, Daniel, Han, Jisheng, Moghadam, Hamid Amini, Tanner, Philip, Dimitrijev, Sima

مصطلحات موضوعية: Electronics, sensors and digital hardware, Science & Technology, Physical Sciences, Nanoscience & Nanotechnology

Relation: Microelectronics Reliability; Pande, P; Haasmann, D; Han, J; Moghadam, HA; Tanner, P; Dimitrijev, S, Electrical characterization of SiC MOS capacitors: A critical review, Microelectronics Reliability, 2020, 112, pp. 113790; http://hdl.handle.net/10072/400803

الاتاحة: http://hdl.handle.net/10072/400803
https://doi.org/10.1016/j.microrel.2020.113790

المؤلفون: Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Nicholls, Jordan R, Pande, Peyush, Dimitrijev, Sima

مصطلحات موضوعية: Engineering, Electrical engineering, Information and computing sciences

Relation: IEEE Access; Jadli, U; Mohd-Yasin, F; Moghadam, HA; Nicholls, JR; Pande, P; Dimitrijev, S, The Correct Equation for the Current through Voltage-Dependent Capacitors, IEEE Access, 2020; http://hdl.handle.net/10072/394214

الاتاحة: http://hdl.handle.net/10072/394214
https://doi.org/10.1109/access.2020.2997906

المؤلفون: Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Nicholls, Jordan R, Pande, Peyush, Dimitrijev, Sima

مصطلحات موضوعية: Electrical engineering, Electronics, sensors and digital hardware

Relation: IEEE Transactions on Power Electronics; Jadli, U; Mohd-Yasin, F; Moghadam, HA; Nicholls, JR; Pande, P; Dimitrijev, S, A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances, IEEE Transactions on Power Electronics, 2020; http://hdl.handle.net/10072/395708

الاتاحة: http://hdl.handle.net/10072/395708
https://doi.org/10.1109/tpel.2020.2993639

المؤلفون: Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Pande, Peyush, Nicholls, Jordan R, Dimitrijev, Sima

مصطلحات موضوعية: Engineering, Information and computing sciences

Relation: IEEE Access; Jadli, U; Mohd-Yasin, F; Moghadam, HA; Pande, P; Nicholls, JR; Dimitrijev, S, Measurement of Power Dissipation due to Parasitic Capacitances of Power MOSFETs, IEEE Access, 2020; http://hdl.handle.net/10072/398449

الاتاحة: http://hdl.handle.net/10072/398449
https://doi.org/10.1109/access.2020.3030269

المؤلفون: Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng

مصطلحات موضوعية: Electrical engineering, Electronics, sensors and digital hardware, Nanotechnology

Relation: IEEE Journal of the Electron Devices Society; http://hdl.handle.net/10072/380455

الاتاحة: http://hdl.handle.net/10072/380455
https://doi.org/10.1109/JEDS.2018.2820729

المؤلفون: Nautiyal, Priyanka, Pande, Peyush, Kundu, Virender Singh, Moghadam, Hamid Amini

المصدر: Microelectronics Reliability ; volume 139, page 114800 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2022.114800
https://api.elsevier.com/content/article/PII:S0026271422003249?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271422003249?httpAccept=text/plain

المؤلفون: Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh

المصدر: Materials Science Forum; June 2023, Vol. 1091 Issue: 1 p25-29, 5p

المؤلفون: Tanner, Philip, Dimitrijev, Sima, Moghadam, Hamid Amini, Aminbeidokhti, Amirhossein, Han, Jisheng

مصطلحات موضوعية: Physical chemistry, Materials engineering

Relation: Materials Science Forum; http://hdl.handle.net/10072/62166

الاتاحة: http://hdl.handle.net/10072/62166
https://doi.org/10.4028/www.scientific.net/MSF.778-780.997

المؤلفون: Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Chaturvedi, Mayank, Jadli, Utkarsh

المساهمون: SICC Material Co. Ltd.

المصدر: Solid-State Electronics ; volume 171, page 107874 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2020.107874
https://api.elsevier.com/content/article/PII:S0038110120303415?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110120303415?httpAccept=text/plain

المؤلفون: Nguyen, Hong-Quan, Moghadam, Hamid Amini, Dinh, Toan, Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Han, Jisheng, Dimitrijev, Sima, Nguyen, Nam-Trung, Dao, Dzung Viet

مصطلحات موضوعية: AlGaN/GaN HEMT, Four-terminal device, Strain sensor

Relation: https://doi.org/10.1016/j.matlet.2019.02.050; Nguyen, Hong-Quan, Moghadam, Hamid Amini, Dinh, Toan, Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Han, Jisheng, Dimitrijev, Sima, Nguyen, Nam-Trung and Dao, Dzung Viet. 2019. "Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain." Materials Letters. 244, pp. 66-69. https://doi.org/10.1016/j.matlet.2019.02.050

الاتاحة: https://research.usq.edu.au/item/q5q09/dependence-of-offset-voltage-in-algan-gan-van-der-pauw-devices-under-mechanical-strain
https://doi.org/10.1016/j.matlet.2019.02.050

المؤلفون: Li, Baikui, Tang, Xi, Li, Hui, Moghadam, Hamid Amini, Zhang, Zhaofu, Han, Jisheng, Nam-Trung, Nguyen, Dimitrijev, Sima, Wang, Jiannong

Relation: http://repository.ust.hk/ir/Record/1783.1-97402; Applied Physics Express, v. 12, (6), June 2019, article number 064001; https://doi.org/10.7567/1882-0786/ab1b19; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1882-0778&rft.volume=12&rft.issue=(6)&rft.date=2019&rft.spage=&rft.aulast=Li&rft.aufirst=Bai&rft.atitle=Impact+of+carrier+injections+on+the+threshold+voltage+in+p-GaN+gate+AIGaN%2FGaN+power+HEMTs&rft.title=APPLIED+PHYSICS+EXPRESS; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000467480900001; http://www.scopus.com/record/display.url?eid=2-s2.0-85069513893&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-97402
https://doi.org/10.7567/1882-0786/ab1b19
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1882-0778&rft.volume=12&rft.issue=(6)&rft.date=2019&rft.spage=&rft.aulast=Li&rft.aufirst=Bai&rft.atitle=Impact+of+carrier+injections+on+the+threshold+voltage+in+p-GaN+gate+AIGaN%2FGaN+power+HEMTs&rft.title=APPLIED+PHYSICS+EXPRESS
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000467480900001
http://www.scopus.com/record/display.url?eid=2-s2.0-85069513893&origin=inward

المؤلفون: Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng

مصطلحات موضوعية: Electrical engineering, Electronics, sensors and digital hardware

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/10072/384189

الاتاحة: http://hdl.handle.net/10072/384189
https://doi.org/10.1109/TED.2019.2900663