يعرض 1 - 20 نتائج من 9,827 نتيجة بحث عن '"Modulation-doped field-effect transistors"', وقت الاستعلام: 0.57s تنقيح النتائج
  1. 1
    Academic Journal
    Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys.

    المؤلفون: Hong, Gongyi1,2 (AUTHOR) Gongyi.hong.ctr@us.af.mil, Chaney, Alexander1,3 (AUTHOR), Charnas, Adam1 (AUTHOR), Kim, Yunjo1 (AUTHOR), Asel, Thaddeus J.1 (AUTHOR), Neal, Adam T.1 (AUTHOR), Mou, Shin1 (AUTHOR)

    المصدر: Journal of Applied Physics. 12/28/2024, Vol. 136 Issue 24, p1-16. 16p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *TWO-dimensional electron gas, *INTERFACIAL roughness, *NUMERICAL solutions to equations, *ACOUSTIC phonons


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  2. 2
    Academic Journal
    Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis.

    المؤلفون: Rai, Narendra1 (AUTHOR) narendra.rai1812@gmail.com, Sarkar, Ritam1,2 (AUTHOR) ritams321@gmail.com, Mahajan, Ashutosh3 (AUTHOR) ashutosh.mahajan@vit.ac.in, Laha, Apurba1 (AUTHOR) apurba.laha@gmail.com, Saha, Dipankar1 (AUTHOR) dsahaiitb@gmail.com, Ganguly, Swaroop1 (AUTHOR) swaroop.ganguly@gmail.com

    المصدر: Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-13. 13p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *CONDUCTION bands, *THRESHOLD voltage, *GALLIUM nitride


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  3. 3
    Academic Journal
    Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling.

    المؤلفون: Jeyakumar, Ranie S.1 (AUTHOR), James, J. J.2 (AUTHOR), Ganguly, Swaroop1 (AUTHOR), Saha, Dipankar1 (AUTHOR) dipankarsaha@iitb.ac.in

    المصدر: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-9. 9p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *TWO-dimensional electron gas, *ENERGY levels (Quantum mechanics), *FERMI energy, *POWER electronics


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  4. 4
    Academic Journal
    Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors.

    المؤلفون: Liu, T. K.1 (AUTHOR), Lee, H.2 (AUTHOR), Luo, X. Y.1 (AUTHOR), Zhang, E. X.3 (AUTHOR), Schrimpf, R. D.1 (AUTHOR), Rajan, S.2 (AUTHOR), Fleetwood, D. M.1 (AUTHOR) dan.fleetwood@vanderbilt.edu

    المصدر: Journal of Applied Physics. 10/14/2024, Vol. 136 Issue 14, p1-10. 10p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *FIELD-effect transistors, *NOISE measurement, *RADIATION tolerance, *SPECTRAL energy distribution


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  5. 5
    Academic Journal
    Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors.

    المؤلفون: Mitterhuber, Lisa1 (AUTHOR) lisa.mitterhuber@mcl.at, Kosednar-Legenstein, Barbara1 (AUTHOR), Vohra, Anurag2 (AUTHOR), Borga, Matteo2 (AUTHOR), Posthuma, Niels2 (AUTHOR), Kraker, Elke1 (AUTHOR)

    المصدر: Journal of Applied Physics. 7/28/2024, Vol. 136 Issue 4, p1-11. 11p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *THERMAL conductivity, *PHONON scattering, *TIME-domain analysis, *CRYSTAL grain boundaries


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  6. 6
    Academic Journal
    Structural and interface band alignment properties of transparent p-type α-GaCrO3:Ni/α-Al2O3 heterojunction.

    المؤلفون: Sharma, Rishav1,2 (AUTHOR), Baraik, Kiran1,3 (AUTHOR), Srivastava, Himanshu1,3 (AUTHOR), Mandal, Satish Kumar4 (AUTHOR), Ganguli, Tapas1,3 (AUTHOR), Jangir, Ravindra1,3 (AUTHOR) ravindrajangir@rrcat.gov.in

    المصدر: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-9. 9p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *METAL oxide semiconductors, *MAGNETRON sputtering, *THIN films, *CONDUCTION bands, *SUBSTRATES (Materials science)


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  7. 7
    Academic Journal
    Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction.

    المؤلفون: Piotrowicz, C.1,2 (AUTHOR) clementine.piotrowicz@cea.fr, Mohamad, B.1 (AUTHOR), Malbert, N.2 (AUTHOR), Bécu, S.1 (AUTHOR), Ruel, S.1 (AUTHOR), Le Royer, C.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/7/2024, Vol. 135 Issue 17, p1-11. 11p.

    مصطلحات موضوعية: *METAL oxide semiconductor capacitors, *MODULATION-doped field-effect transistors, *METAL oxide semiconductor field-effect transistors, *GALLIUM nitride, *ELECTRON mobility, *COMPUTER-aided design, *PLASMA etching, *STRAY currents


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  8. 8
    Academic Journal
    AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application.

    المؤلفون: Dai, Yang1 (AUTHOR) daiyang@nwu.edu.cn, Li, Yukun1 (AUTHOR), Gao, Leiyu1 (AUTHOR), Zuo, Jing1 (AUTHOR), Zhang, Biying1 (AUTHOR), Chen, Cheng1 (AUTHOR) cchen@nwu.edu.cn, Wang, Zhongxu2 (AUTHOR), Zhao, Wu1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-13. 13p.

    مصطلحات موضوعية: *TWO-dimensional electron gas, *MODULATION-doped field-effect transistors, *GALLIUM nitride, *OHMIC contacts, *ELECTRON gas, *MANUFACTURING processes, *TERAHERTZ spectroscopy


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  9. 9
    Academic Journal
    Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain.

    المؤلفون: Hoshi, Takuya1 (AUTHOR) takuya.hoshi@ntt.com, Yoshiya, Yuki1 (AUTHOR), Sugiyama, Hiroki1 (AUTHOR), Nakajima, Fumito1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-7. 7p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *METAL semiconductor field-effect transistors, *AUDITING standards, *GALLIUM arsenide, *CARRIER density, *ELECTRON mobility, *OHMIC contacts


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  10. 10
    Academic Journal
    Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors.

    المؤلفون: Liu, Kai1 (AUTHOR), Wang, Chong1 (AUTHOR) chongw@xidian.edu.cn, Zhang, Kuo1 (AUTHOR), Ma, Xiaohua1 (AUTHOR), Bai, Junchun1 (AUTHOR), Zheng, Xuefeng1 (AUTHOR), Li, Ang1 (AUTHOR), Hao, Yue1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-10. 10p.

    مصطلحات موضوعية: *THRESHOLD voltage, *MODULATION-doped field-effect transistors, *STRAY currents, *GALLIUM nitride, *METALWORK, *FIELD-effect transistors, *SCHOTTKY barrier


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  11. 11
    Academic Journal
    Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors.

    المؤلفون: Rai, Narendra1 (AUTHOR) narendra.rai1812@gmail.com, Sarkar, Ritam1,2 (AUTHOR) ritams321@gmail.com, Mahajan, Ashutosh3 (AUTHOR) ashutoshpm@gmail.com, Laha, Apurba1 (AUTHOR) apurba.laha@gmail.com, Saha, Dipankar1 (AUTHOR) dsahaiitb@gmail.com, Ganguly, Swaroop1 (AUTHOR) swaroop.ganguly@gmail.com

    المصدر: Journal of Applied Physics. 12/28/2023, Vol. 134 Issue 24, p1-12. 12p.

    مصطلحات موضوعية: *STRAY currents, *MODULATION-doped field-effect transistors, *ELECTRON traps, *GALLIUM nitride, *ELECTRON emission, *THERMAL electrons, *ELECTRIC fields


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  12. 12
    Academic Journal
    Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief.

    المؤلفون: Al-Mamun, Nahid Sultan1 (AUTHOR), Bae, Joonyup2 (AUTHOR), Kim, Jihyun2 (AUTHOR), Haque, Aman1 (AUTHOR) mah37@psu.edu, Wolfe, Douglas E.3 (AUTHOR), Ren, Fan4 (AUTHOR), Pearton, Stephen J.5 (AUTHOR)

    المصدر: Journal of Applied Physics. 12/14/2023, Vol. 134 Issue 22, p1-10. 10p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *IRRADIATION, *ELECTRON traps, *GALLIUM nitride, *PROTONS, *CARRIER density, *RADIATION


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  13. 13
    Academic Journal
    Designing common-source low noise amplifier utilizing GaN HEMT for sub-6 GHz in 5G wireless applications.

    المؤلفون: Zarrik, Samia1 samia.zarrik@uit.ac.ma, Bendali, Abdelhak1 bendaliabdelhak@gmail.com, ALtalqi, Fatehi1 fatehi.abdullah2009@gmail.com, Benkhadda, Karima1 karima.benkhadda@uit.ac.ma, Habibi, Sanae1 sanae.habibi@uit.ac.ma, Sahel, Zahra1 zahra.sahel@uit.ac.ma, El Kobbi, Mouad1 mouad.elkobbi@uit.ac.ma, Hadjoudja, Abdelkader1 abdelkader.hadjoudja@uit.ac.ma, Habibi, Mohamed1 habibi.mohamed@uit.ac.ma

    المصدر: Telkomnika. Feb2025, Vol. 23 Issue 1, p48-56. 9p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *LOW noise amplifiers, *GALLIUM nitride, *NETWORK performance, *WORKING class


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  14. 14
    Academic Journal
    The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature.

    المؤلفون: Yan, Shumeng1 (AUTHOR) smyan2019@sinano.ac.cn, Yang, Tianying1 (AUTHOR), Yuan, Tingting1 (AUTHOR), Liu, Guoguo1 (AUTHOR), Xu, Tao1 (AUTHOR), Chen, Lijie1 (AUTHOR), Cheng, Chuan1 (AUTHOR), Chen, Gaopeng1 (AUTHOR) gaopeng.chen@raytrontek.com

    المصدر: Journal of Physics D: Applied Physics. 1/20/2025, Vol. 58 Issue 3, p1-6. 6p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *GALLIUM nitride, *ELECTRON mobility, *HIGH temperatures, *THRESHOLD voltage


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  15. 15
    Academic Journal
    Fabrication and formation mechanisms of ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs.

    المؤلفون: Li, Shanjie1 (AUTHOR), Wu, Changtong2 (AUTHOR), Zeng, Fanyi2 (AUTHOR), Wu, Nengtao1 (AUTHOR), Luo, Ling2 (AUTHOR), Cao, Ben2 (AUTHOR), Wang, Wenliang2 (AUTHOR), Li, Guoqiang1,2,3 (AUTHOR) msgli@scut.edu.cn

    المصدر: Journal of Physics D: Applied Physics. 1/13/2025, Vol. 58 Issue 2, p1-7. 7p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *TWO-dimensional electron gas, *RADIO frequency, *OHMIC resistance, *OHMIC contacts, *GALLIUM nitride


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  16. 16
    Academic Journal
    Physical understanding of a normally off p-GaN/AlGaN/GaN HEMT gate stack and a review of V TH measurement techniques.

    المؤلفون: Murukesan, Karthick1 (AUTHOR) km696@cam.ac.uk, Efthymiou, Loizos1 (AUTHOR), Udrea, Florin1 (AUTHOR)

    المصدر: Journal of Physics D: Applied Physics. 1/13/2025, Vol. 58 Issue 2, p1-10. 10p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *WIDE gap semiconductors, *TWO-dimensional electron gas, *EXTRACTION techniques, *ELECTRIC fields


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  17. 17
    Academic Journal
    Indium alloying in ε-Ga2O3 for polarization and interfacial charge tuning.

    المؤلفون: Wang, Yan1 (AUTHOR) ywang950@connect.hkust-gz.edu.cn, Guan, Yizhang1 (AUTHOR), Zhang, Chuang1 (AUTHOR), Cao, Jiahe1 (AUTHOR), Chen, Xuanyan1 (AUTHOR), Ouyang, Qiangqiang2,3 (AUTHOR), Wong, Yew Hoong4 (AUTHOR), Hu, Guofeng1 (AUTHOR), Tan, Chee Keong1,5,6,7 (AUTHOR) cheekeongtan@hkust-gz.edu.cn

    المصدر: Applied Physics Letters. 1/13/2025, Vol. 126 Issue 2, p1-7. 7p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *TWO-dimensional electron gas, *INDIUM alloys, *POWER transistors, *DENSITY functional theory


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  18. 18
    Academic Journal
    E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks.

    المؤلفون: Liu, Jiangnan1 (AUTHOR), Wang, Ding1 (AUTHOR) dinwan@umich.edu, Hasan, Md Tanvir1 (AUTHOR), Mondal, Shubham1 (AUTHOR), Manassa, Jason2 (AUTHOR), Shen, Jeremy M.1 (AUTHOR), Wang, Danhao1 (AUTHOR), Tanim, Md Mehedi Hasan1 (AUTHOR), Yang, Samuel1 (AUTHOR), Hovden, Robert2 (AUTHOR), Mi, Zetian1 (AUTHOR) ztmi@umich.edu

    المصدر: Applied Physics Letters. 1/6/2025, Vol. 126 Issue 1, p1-7. 7p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *ELECTRON traps, *THRESHOLD voltage, *GALLIUM nitride


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  19. 19
    Academic Journal
    Advanced measurement methods for high-power gallium nitride high electron mobility transistors.

    المؤلفون: Wang, Lu-Lu1,2 (AUTHOR), Fang, Wen-Rao2 (AUTHOR) fangwenrao@nint.ac.cn, Huang, Wen-Hua2 (AUTHOR), Yang, Zhi-Qiang2 (AUTHOR), Deng, Guang-Jian2 (AUTHOR), Liu, Chang-Kun2 (AUTHOR), Zhao, Juan2 (AUTHOR)

    المصدر: Review of Scientific Instruments. Jan2025, Vol. 96 Issue 1, p1-8. 8p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *GALLIUM nitride, *SEMICONDUCTOR devices, *POWER density, *TEST systems


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  20. 20
    Academic Journal
    The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters.

    المؤلفون: Yu, Junfeng1 (AUTHOR), Ding, Jihong2 (AUTHOR) dingjihong2005@163.com, Wang, Tao3 (AUTHOR) wanty678@126.com, Huang, Yukai1 (AUTHOR), Du, Wenzhang1 (AUTHOR), Liang, Jiao4 (AUTHOR), Ma, Hongping4 (AUTHOR), Zhang, Qingchun4 (AUTHOR), Li, Liang5 (AUTHOR) ll@jssvc.edu.cn, Huang, Wei1 (AUTHOR) ll@jssvc.edu.cn, Zhang, Wei1 (AUTHOR)

    المصدر: Nanomaterials (2079-4991). Dec2024, Vol. 14 Issue 24, p1984. 12p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *THRESHOLD voltage, *ACTIVATION energy, *GALLIUM nitride, *ELECTRON capture

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