يعرض 1 - 20 نتائج من 3,251 نتيجة بحث عن '"Metal semiconductor field-effect transistors"', وقت الاستعلام: 0.59s تنقيح النتائج
  1. 1
    Academic Journal
    Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain.

    المؤلفون: Hoshi, Takuya1 (AUTHOR) takuya.hoshi@ntt.com, Yoshiya, Yuki1 (AUTHOR), Sugiyama, Hiroki1 (AUTHOR), Nakajima, Fumito1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-7. 7p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *METAL semiconductor field-effect transistors, *AUDITING standards, *GALLIUM arsenide, *CARRIER density, *ELECTRON mobility, *OHMIC contacts


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  2. 2
    Academic Journal
    Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy.

    المؤلفون: Chen, Chen1 (AUTHOR) cc2053@cam.ac.uk, Ghosh, Saptarsi1 (AUTHOR), De Wolf, Peter2 (AUTHOR), Liang, Zhida1 (AUTHOR), Adams, Francesca1 (AUTHOR), Kappers, Menno J.1 (AUTHOR), Wallis, David J.1,3 (AUTHOR), Oliver, Rachel A.1 (AUTHOR)

    المصدر: Applied Physics Letters. 6/3/2024, Vol. 124 Issue 23, p1-6. 6p.

    مصطلحات موضوعية: *THRESHOLD voltage, *METAL semiconductor field-effect transistors, *ELECTRIC capacity, *MODULATION-doped field-effect transistors


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  3. 3
    Academic Journal
    The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors.

    المؤلفون: Passlack, Matthias, Tasneem, Nujhat, Park, Chinsung, Ravindran, Prasanna Venkat, Chen, Hang, Das, Dipjyoti, Yu, Shimeng, Chen, Edward, Wang, Jer-Fu, Chang, Chih-Sheng, Lin, Yu-Ming, Radu, Iuliana, Khan, Asif

    المصدر: Journal of Applied Physics; 4/7/2024, Vol. 135 Issue 13, p1-9, 9p

    مصطلحات موضوعية: THRESHOLD voltage, TRANSISTORS, METAL semiconductor field-effect transistors, SILICON, METAL oxide semiconductor field-effect transistors


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  4. 4
    Academic Journal
    Study on the frequency characteristics of split-gate AlGaN/GaN HFETs.

    المؤلفون: Zhou, Heng1 (AUTHOR), Lv, Yuanjie2 (AUTHOR), Liu, Yang1 (AUTHOR), Wang, Mingyan1 (AUTHOR), Cui, Peng3 (AUTHOR), Lin, Zhaojun1,3 (AUTHOR) linzj@sdu.edu.cn

    المصدر: Modern Physics Letters B. 4/30/2024, Vol. 38 Issue 12, p1-9. 9p.

    مصطلحات موضوعية: *METAL semiconductor field-effect transistors, *FIELD-effect transistors, *POWER amplifiers, *MODULATION-doped field-effect transistors, *FREQUENCIES of oscillating systems, *METAL oxide semiconductor capacitors, *VOLTAGE


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  5. 5
    Academic Journal
    An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing.

    المؤلفون: Su, Huake1 (AUTHOR), Zhang, Tao1 (AUTHOR) zhangtao@xidian.edu.cn, Xu, Shengrui1 (AUTHOR) srxu@xidian.edu.cn, Tao, Hongchang1 (AUTHOR), Gao, Yuan1 (AUTHOR), Liu, Xu1 (AUTHOR), Xie, Lei1 (AUTHOR), Xiang, Peng2 (AUTHOR), Cheng, Kai2 (AUTHOR), Hao, Yue1 (AUTHOR), Zhang, Jincheng1 (AUTHOR) jchzhang@xidian.edu.cn

    المصدر: Applied Physics Letters. 4/15/2024, Vol. 124 Issue 16, p1-5. 5p.

    مصطلحات موضوعية: *METAL oxide semiconductor field-effect transistors, *METAL semiconductor field-effect transistors, *FIELD-effect transistors, *THRESHOLD voltage, *METALWORK, *INDIUM gallium nitride


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  6. 6
    Academic Journal
    Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench.

    المؤلفون: He, JiaQi1,2 (AUTHOR), Wang, PeiRan1 (AUTHOR), Du, FangZhou1 (AUTHOR), Wen, KangYao1 (AUTHOR), Jiang, Yang1 (AUTHOR), Tang, ChuYing1 (AUTHOR), Deng, ChenKai1 (AUTHOR), Li, MuJun1 (AUTHOR), Hu, QiaoYu1 (AUTHOR), Tao, Nick3 (AUTHOR), Xiang, Peng4 (AUTHOR), Cheng, Kai4 (AUTHOR), Wang, Qing1,5 (AUTHOR) wangq7@sustech.edu.cn, Li, Gang2 (AUTHOR) gang.w.li@polyu.edu.hk, Yu, HongYu1,5 (AUTHOR) yuhy@sustech.edu.cn

    المصدر: Applied Physics Letters. 3/25/2024, Vol. 124 Issue 13, p1-5. 5p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *METAL semiconductor field-effect transistors, *GALLIUM nitride, *CARRIER density, *ELECTRIC fields


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  7. 7
    Academic Journal
    Changes in the Characteristics of Semiconductor Structures of Microwave Amplifiers under the Action of Pulsed Laser Radiation.

    المؤلفون: Pashentsev, V. N.1 (AUTHOR) pashentsev2001@mail.ru

    المصدر: Technical Physics. 2024, Vol. 69 Issue 3, p638-644. 7p.

    مصطلحات موضوعية: *METAL semiconductor field-effect transistors, *LASER beams, *MICROWAVE amplifiers, *PULSED lasers, *FIELD-effect transistors


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  8. 8
    Academic Journal
    Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors.

    المؤلفون: Vogt, Sofie, Splith, Daniel, Köpp, Sebastian, Schlupp, Peter, Petersen, Clemens, von Wenckstern, Holger, Grundmann, Marius

    المصدر: Applied Physics Letters; 12/16/2024, Vol. 125 Issue 25, p1-6, 6p

    مصطلحات موضوعية: FIELD-effect transistors, PULSED laser deposition, THIN films, THICK films, THRESHOLD voltage, METAL semiconductor field-effect transistors, METAL oxide semiconductor field-effect transistors


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  9. 9
    Conference
    Improving Thevi characteristics of mesfetby varying drain region length and comparing with MOSFET.

    المؤلفون: Akhil, Chandaka1 (AUTHOR), Yakkala, Bhaskarrao1 (AUTHOR) bhaskarrao@saveetha.com

    المصدر: AIP Conference Proceedings. 2023, Vol. 2822 Issue 1, p1-8. 8p.

    مصطلحات موضوعية: *METAL semiconductor field-effect transistors, *FIELD-effect transistors, *METAL oxide semiconductor field-effect transistors


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  10. 10
    Conference
    Comparison of V-I characteristics between MOSFET and MESFET by varying channel length.

    المؤلفون: Akhil, Chandaka1 (AUTHOR), Yakkala, Bhaskarrao1 (AUTHOR) bhaskarrao@saveetha.com

    المصدر: AIP Conference Proceedings. 2023, Vol. 2822 Issue 1, p1-8. 8p.

    مصطلحات موضوعية: *METAL oxide semiconductor field-effect transistors, *METAL semiconductor field-effect transistors, *MOORE'S law


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  11. 11
    Conference
    Comparison of V-I characteristics between MOSFET and MESFET by varying the substrate thickness.

    المؤلفون: Akhil, Chandaka1 (AUTHOR), Yakkala, Bhaskarrao1 (AUTHOR) bhaskarrao@saveetha.com

    المصدر: AIP Conference Proceedings. 2023, Vol. 2822 Issue 1, p1-8. 8p.

    مصطلحات موضوعية: *METAL semiconductor field-effect transistors, *METAL oxide semiconductor field-effect transistors


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  12. 12
    Academic Journal
    Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact.

    المؤلفون: Yang, Chengzhi1 (AUTHOR), Jiang, Cheng1 (AUTHOR), Niu, Wencheng2 (AUTHOR), Hao, Dandan1 (AUTHOR), Huang, Hao3 (AUTHOR) hhuang@gxu.edu.cn, Fu, Houqiang4 (AUTHOR), Miao, Jinshui5 (AUTHOR), Liu, Xingqiang2 (AUTHOR), Zou, Xuming2 (AUTHOR), Shan, Fukai1 (AUTHOR) fkshan@qdu.edu.cn, Yang, Zhenyu1 (AUTHOR) yangzhenyu@whu.edu.cn

    المصدر: Applied Physics Letters. 2/12/2024, Vol. 124 Issue 7, p1-7. 7p.

    مصطلحات موضوعية: *FIELD-effect transistors, *METAL semiconductor field-effect transistors, *INTEGRATED circuits, *MANUFACTURING processes, *THRESHOLD voltage, *HIGH voltages, *DIELECTRICS


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  13. 13
    Academic Journal
    Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures.

    المؤلفون: Zhou, Fu-gui1,2 (AUTHOR), Feng, Rui-ze1,2 (AUTHOR), Cao, Shu-rui1,2 (AUTHOR), Feng, Zhi-yu1,2 (AUTHOR), Liu, Tong1 (AUTHOR), Su, Yong-bo1 (AUTHOR), Shi, Jing-yuan1 (AUTHOR), Ding, Wu-chang1,2 (AUTHOR), Jin, Zhi1,2 (AUTHOR) jinzhi@ime.ac.cn

    المصدر: Applied Physics Letters. 2/5/2024, Vol. 124 Issue 6, p1-5. 5p.

    مصطلحات موضوعية: *IMPACT ionization, *METAL semiconductor field-effect transistors, *THRESHOLD voltage, *MODULATION-doped field-effect transistors


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  14. 14
    Academic Journal
    Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor (DMDG‐NC‐TFET) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing.

    المؤلفون: Blessy, P. Hannah, Shenbagavalli, A., Arun Samuel, T. S., Pravin, J. Charles

    المصدر: International Journal of Numerical Modelling; Nov2024, Vol. 37 Issue 6, p1-9, 9p

    مصطلحات موضوعية: FIELD-effect transistors, FERROELECTRIC materials, ELECTRIC capacity, DIELECTRICS, METAL semiconductor field-effect transistors


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  15. 15
    Academic Journal
    Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

    المؤلفون: Lino, L., Saravana Kumar, R., Mohanbabu, A., Murugapandiyan, P.

    المصدر: Journal of Electronic Materials; Sep2024, Vol. 53 Issue 9, p5555-5565, 11p

    مصطلحات موضوعية: TWO-dimensional electron gas, BREAKDOWN voltage, ELECTRIC fields, FREQUENCIES of oscillating systems, BUFFER layers, MODULATION-doped field-effect transistors, METAL semiconductor field-effect transistors


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  16. 16
    Academic Journal
    Radio frequency side-gate nanoscale vacuum channel triode.

    المؤلفون: Shen, Zhihua, Li, Qiaoning, Ge, Bin, Wang, Xiao, Wu, Shengli

    المصدر: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2024, Vol. 42 Issue 5, p1-5, 5p

    مصطلحات موضوعية: STRAY currents, SEMICONDUCTOR devices, ELECTRON transport, RADIO frequency, EXTREME environments, METAL semiconductor field-effect transistors


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  17. 17
    Academic Journal
    Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets.

    المؤلفون: Fath-Ganji, Behrooz1 (AUTHOR), Mir, Ali1 (AUTHOR) mir.a@lu.ac.ir, Naderi, Ali2 (AUTHOR), Talebzadeh, Reza1 (AUTHOR), Farmani, Ali1 (AUTHOR)

    المصدر: Electrical Engineering. Oct2023, Vol. 105 Issue 5, p2781-2794. 14p.

    مصطلحات موضوعية: *METAL semiconductor field-effect transistors, *BREAKDOWN voltage, *INDIUM gallium zinc oxide, *FIELD-effect transistors, *SILICON oxide, *POWER density, *OXIDES


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  18. 18
    Academic Journal
    A novel approach of developing all-optical frequency encoded dibit-based Peres gate using reflective semiconductor optical amplifier.

    المؤلفون: Bhattacharjee, Baibaswata1 (AUTHOR) baibaswata.bhattacharjee@gmail.com, Bosu, Surajit2 (AUTHOR) surajitbosu7@gmail.com

    المصدر: Journal of Nonlinear Optical Physics & Materials. Sep2023, Vol. 32 Issue 3, p1-21. 21p.

    مصطلحات موضوعية: *SEMICONDUCTOR optical amplifiers, *METAL semiconductor field-effect transistors, *ERROR probability, *ENCODING


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  19. 19
    Academic Journal
    Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length.

    المؤلفون: Luo, Shengting1 (AUTHOR), Liu, Xianyun1 (AUTHOR) xyliu@cczu.edu.cn, Jiang, Xingfang1 (AUTHOR)

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Jul2023, Vol. 220 Issue 14, p1-10. 10p.

    مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *METAL semiconductor field-effect transistors, *GALLIUM nitride, *BREAKDOWN voltage


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  20. 20
    Academic Journal
    Small Subthreshold Swing Diamond Field Effect Transistors With SnO 2 Gate Dielectric.

    المؤلفون: He, Shi1, Wang, Wei1 wei_wang2014@xjtu.edu.cn, Chen, Genqiang1, Zhang, Shumiao1, Li, Qi1, Zhang, Qianwen1, Chang, Xiaohui1, Wang, Yan-Feng1, Zhang, Minghui1, Wang, Hong-Xing1

    المصدر: IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4427-4431. 5p.

    مصطلحات موضوعية: FIELD-effect transistors, METAL semiconductor field-effect transistors, DIELECTRICS, DIAMOND surfaces, DIAMONDS, STRAY currents, MODULATION-doped field-effect transistors, BREAKDOWN voltage


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