نتائج البحث - "Metal–organic chemical vapor deposition (MOCVD)"

المساهمون: Wang, Zhenyu, Tripathi, Mukesh, Golsanamlou, Zahra, Kumari, Poonam, Lovarelli, Giuseppe, Mazziotti, Fabrizio, Logoteta, Demetrio, Fiori, Gianluca, Sementa, Luca, Marega, Guilherme Migliato, Ji, Hyun Goo, Zhao, Yanfei, Radenovic, Aleksandra, Iannaccone, Giuseppe, Fortunelli, Alessandro, Kis, Andras

مصطلحات موضوعية: TMDC heterostructure, metal-organic chemical vapor deposition (MOCVD), p-type MoS2, substitutional doping

Relation: info:eu-repo/semantics/altIdentifier/pmid/36644893; info:eu-repo/semantics/altIdentifier/wos/WOS:000940332200001; volume:35; issue:14; firstpage:1; lastpage:10; numberofpages:10; journal:ADVANCED MATERIALS; https://hdl.handle.net/11573/1683826; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85148948374

الاتاحة: https://hdl.handle.net/11573/1683826
https://doi.org/10.1002/adma.202209371

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5

Academic Journal

Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance

المؤلفون: Rodriguez-Lamas, Raquel, Pla, Dolors, Pirovano, Caroline, Chaix-Pluchery, Odette, Moncasi, Carlos, Boudard, Michel, Vannier, Rose-Noëlle, Jiménez, Carmen, Burriel, Mónica

المساهمون: Laboratoire des matériaux et du génie physique (LMGP), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Université Grenoble Alpes (UGA), Université de Lille, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 2772-9494 ; Materials Today Electronics ; https://hal.science/hal-04260437 ; Materials Today Electronics, 2023, 5, pp.100054. ⟨10.1016/j.mtelec.2023.100054⟩.

مصطلحات موضوعية: Resistive switching valence change memories (VCMs) manganites memristive devices metal organic chemical vapor deposition (MOCVD), [CHIM]Chemical Sciences

الاتاحة: https://hal.science/hal-04260437
https://hal.science/hal-04260437v1/document
https://hal.science/hal-04260437v1/file/1-s2.0-S277294942300030X-main.pdf
https://doi.org/10.1016/j.mtelec.2023.100054

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6

Academic Journal

La$_2$NiO$_{4+\delta}$ ‐based memristive devices integrated on Si‐based substrates

المؤلفون: Khuu, Thoai‐khanh, Lefèvre, Gauthier, Jiménez, Carmen, Roussel, Hervé, Riaz, Adeel, Blonkowski, Serge, Jalaguier, Eric, Bsiesy, Ahmad, Burriel, Mónica

المساهمون: Laboratoire des matériaux et du génie physique (LMGP), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), the financial support of the “Nanosciences aux limites de la Nanoélectronique” Fundation and CNRS Renatech network, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-14-ACHN-0012,MicroSwitch,Ingénierie de couches minces d'oxydes pour les dispositifs futurs de la micro et nanoélectronique(2014), ANR-10-LABX-0044,CEMAM,Center of Excellence in Multifunctional Architectured Materials(2010)

المصدر: ISSN: 2365-709X ; Advanced Materials Technologies ; https://hal.science/hal-03764455 ; Advanced Materials Technologies, 2022, 2022, pp.2200329. ⟨10.1002/admt.202200329⟩.

مصطلحات موضوعية: anthanum nickelate, memristive devices, metal organic chemical vapor deposition (MOCVD), resistive switching, valence change memories (VCMs), lanthanum nickelate, [CHIM.MATE]Chemical Sciences/Material chemistry

الاتاحة: https://hal.science/hal-03764455
https://hal.science/hal-03764455v1/document
https://hal.science/hal-03764455v1/file/Khuu_AMT-rev-Main-2-for%20HAL.pdf
https://doi.org/10.1002/admt.202200329

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7

Conference

Electron Microscopy Studies of GaP(N,As) Grown on Si

المساهمون: Al-Jassim, M

المصدر: Other Information: Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

وصف الملف: Medium: ED; Size: 5 pp.

URL الوصول: http://www.osti.gov/scitech/servlets/purl/860687

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8

Conference

Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials; Preprint

المساهمون: Crandall, R

المصدر: 763; Conference: Prepared for the 2003 Materials Research Society Spring Meeting, 21-25 April 2003, San Francisco, California

وصف الملف: Medium: ED; Size: 9 pp.

URL الوصول: http://www.osti.gov/scitech/servlets/purl/15004056

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9

Academic Journal

Carbon incorporation in MOCVD of MoS2 thin films grown from an organosulfide precursor

المؤلفون: Schaefer, Christian M., Caicedo Roque, Jose Manuel, Sauthier, Guillaume, Bousquet, Jessica, HÃ©bert, ClÃ©ment, Sperling, Justin R., Perez-Tomas, Amador, Santiso, JosÃ©, Del Corro, Elena, Garrido, Jose

مصطلحات موضوعية: A3. metal organic chemical vapor deposition (MOCVD), Chemical compositions, Effect of temperature, Electronic application, Molybdenum hexacarbonyl, Nanographitic carbons, Transition metal dichalcogenides, Two Dimensional (2 D)

وصف الملف: application/pdf

Relation: European Commission 732032; European Commission 825430; European Commission 881603; AgÃ¨ncia de GestiÃ³ d'Ajuts Universitaris i de Recerca 2017/SGR-1426; Agencia Estatal de InvestigaciÃ³n FIS2017-85787-R; Agencia Estatal de InvestigaciÃ³n SEV-2017-0706; Chemistry of materials; Vol. 33, Issue 12 (June 2021), p. 4474-4487; https://ddd.uab.cat/record/266839; urn:10.1021/acs.chemmater.1c00646; urn:oai:ddd.uab.cat:266839; urn:scopus_id:85108411712; urn:articleid:15205002v33n12p4474; urn:icn2uab:6523217

الاتاحة: https://ddd.uab.cat/record/266839

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10

Academic Journal

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

المؤلفون: Oumaima Abouzaid, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, Nicolas Chauvin, Jean-Michel Hartmann, Bouraoui Ilahi, Denis Morris, Ali Ahaitouf, Abdelaziz Ahaitouf, Thierry Baron

المصدر: Nanomaterials; Volume 10; Issue 12; Pages: 2450

مصطلحات موضوعية: Quantum Dots (QDs), semiconductor III-V, Metal Organic Chemical Vapor Deposition (MOCVD)

وصف الملف: application/pdf

Relation: Synthesis, Interfaces and Nanostructures; https://dx.doi.org/10.3390/nano10122450

الاتاحة: https://doi.org/10.3390/nano10122450

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11

Academic Journal

A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thickness

المؤلفون: Döring, Philipp, Sinnwell, Matthias, Müller, Stefan, Czap, Heiko, Driad, Rachid, Brückner, Peter, Köhler, Klaus, Kirste, Lutz, Mikulla, Michael, Quay, Rüdiger

مصطلحات موضوعية: Gallium nitride (GaN), high-electron -mobility transistor (HEMT), ion implantation, metal-organic chemical vapor deposition (MOCVD), p-GaN

Relation: IEEE transactions on electron devices; https://publica.fraunhofer.de/handle/publica/442740

الاتاحة: https://publica.fraunhofer.de/handle/publica/442740
https://doi.org/10.1109/TED.2023.3237803

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12

A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thickness

المؤلفون: Philipp Döring, Matthias Sinnwell, Stefan Müller, Heiko Czap, Rachid Driad, Peter Brückner, Klaus Kohler, Lutz Kirste, Michael Mikulla, Rüdiger Quay

المساهمون: Publica

مصطلحات موضوعية: p-GaN, Gallium nitride (GaN), metal-organic chemical vapor deposition (MOCVD), high-electron -mobility transistor (HEMT), ion implantation, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f71101b93b1bd0a6e6ffce8e34b9cc11
https://publica.fraunhofer.de/handle/publica/442740

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13

Academic Journal

Gold Catalyst-Assisted Metal Organic Chemical Vapor Deposition of Bi-Te-Ni-Cu-Au Complex Thermoelectric Materials on Anodic Aluminum Oxide Nanoporous Template

المؤلفون: Yong Gan, Zhen Yu, Jeremy Gan, Wanli Cheng, Mingheng Li

المصدر: Coatings; Volume 8; Issue 5; Pages: 166

مصطلحات موضوعية: complex materials, metal organic chemical vapor deposition (MOCVD), catalyst assisted growth, self-assembling, thermoelectric energy conversion

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/coatings8050166

الاتاحة: https://doi.org/10.3390/coatings8050166

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14

Academic Journal

SIFAT FISIS FILM TIPIS TiO2-Co YANG DITUMBUHKAN DENGAN TEKNIK MOCVD

المؤلفون: Saragih, Horasdia, Ridwan, Ridwan, Mujamilah, Mujamilah, Arifin, Pepen, Barmawi, Mohamad

المصدر: Jurnal Sains Materi Indonesia; Vol 7, No 2: FEBRUARI 2006; 61 - 67 ; 2614-087X ; 1411-1098

مصطلحات موضوعية: Film tipis, TiO2-Co, semikonduktor feromagnetik, Metal Organic Chemical Vapor Deposition (MOCVD)

وصف الملف: application/pdf

Relation: http://jurnal.batan.go.id/index.php/jsmi/article/view/5002/4341; http://jurnal.batan.go.id/index.php/jsmi/article/view/5002

الاتاحة: http://jurnal.batan.go.id/index.php/jsmi/article/view/5002
https://doi.org/10.17146/jsmi.2006.7.2.5002

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15

Carbon Incorporation in MOCVD of MoS2 Thin Films Grown from an Organosulfide Precursor

المؤلفون: Clément Hébert, José Santiso, Elena del Corro, Christian M. Schaefer, José Manuel Caicedo Roque, Justin R. Sperling, Jose A. Garrido, Amador Pérez-Tomás, Jessica Bousquet, Guillaume Sauthier

المساهمون: European Commission, Generalitat de Catalunya, Universidad Autónoma de Barcelona

المصدر: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
Chemistry of Materials

مصطلحات موضوعية: Chemical vapour deposition, X-ray photoelectron spectroscopy, Chemical compositions, Materials science, Thin films, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Transition metal dichalcogenides, Molybdenum hexacarbonyl, Effect of temperature, A3. metal organic chemical vapor deposition (MOCVD), Materials Chemistry, Metalorganic vapour phase epitaxy, Thin film, Two Dimensional (2 D), Nanographitic carbons, Precursors, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Chemical engineering, chemistry, 0210 nano-technology, Electronic application, Carbon, Pyrolysis

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79c482e2eaac44687d6bed9a4c08ce7e
https://doi.org/10.1021/acs.chemmater.1c00646

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16

La$_2$NiO$_{4+\delta}$ ‐based memristive devices integrated on Si‐based substrates

المؤلفون: Thoai‐Khanh Khuu, Gauthier Lefèvre, Carmen Jiménez, Hervé Roussel, Adeel Riaz, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy, Mónica Burriel

المساهمون: Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), the financial support of the 'Nanosciences aux limites de la Nanoélectronique' Fundation and CNRS Renatech network, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-14-ACHN-0012,MicroSwitch,Ingénierie de couches minces d'oxydes pour les dispositifs futurs de la micro et nanoélectronique(2014), ANR-10-LABX-0044,CEMAM,Center of Excellence in Multifunctional Architectured Materials(2010)

المصدر: Advanced Materials Technologies
Advanced Materials Technologies, 2022, 2022, pp.2200329. ⟨10.1002/admt.202200329⟩

مصطلحات موضوعية: anthanum nickelate, valence change memories (VCMs), Mechanics of Materials, memristive devices, resistive switching, General Materials Science, [CHIM.MATE]Chemical Sciences/Material chemistry, lanthanum nickelate, metal organic chemical vapor deposition (MOCVD), Industrial and Manufacturing Engineering